arXiv subjects

Mark E. Turiansky

Publications and source records attributed to Mark E. Turiansky.

18 recordsLinked to original sources

arXiv2026

Polaron Self-Trapping Rates from First Principles

Polaron formation, also known as self-trapping, is a process akin to nonradiative carrier capture at point defects or impurities. In this work, we develop the formalism to determine how long it takes to form a small hole or electron polaron from first principles. We employ an accurate, fully first-principles approach based on a Koopmans compliant hybrid functional. The self-trapping rate is the product of two components: the nonradiative capture coefficient, which we evaluate using a one-dimensional approximation, and the maximum density of polaron sites, whose physics we elucidate based on finite-size interactions present in supercells. We apply our methodology to several technologically relevant materials known to host hole polarons, Ga$_2$O$_3$, Al$_2$O$_3$, BeO, KBr, MgO, NaCl, SiO$_2$, SnO$_2$, TiO$_2$, and ZnO, and to an electron polaron in rutile TiO$_2$. We also study an emerging semiconductor, rutile GeO$_2$, where we find that polaron formation could hamper $p$-type conductivity. The calculated self-trapping lifetimes span 7 orders of magnitude, from $10^{-1}$ to $10^6$~ps, in agreement with experiments where available, and providing detailed insight into the dynamics of carrier localization and relaxation in solids.

cond-mat.mtrl-sci↗

arXiv2026

Dilute-Limit Defect Displacements Enabled by Brillouin-Zone Sampling

Defects and their interaction with the semiconductor host lattice play an essential role in a variety of technologies. When a defect transitions between two electronic states, the lattice distorts in response. Large displacements occur near the defect, inducing displacements on neighboring atoms, and so on, producing small displacements on atoms hundreds of Ångströms from the defect. Describing these displacements accurately is challenging for first-principles calculations due to limited supercell sizes. Here we demonstrate a procedure to efficiently obtain dilute-limit atomic displacements, using information obtained in typical modest supercells. In our approach, the atomic displacements are first obtained in a small supercell and converted into a force difference under a harmonic potential energy surface. The force difference and phonon modes at different ${\bf q}$-points are then unfolded into the Born-von Kármán supercell to obtain the dilute-limit atomic displacements. We critically analyze the convergence behavior of the force difference and study possible electron density differences that give rise to those forces, arguing that modest supercells are sufficient for internal transitions and bound-exciton transitions. Two example applications of our approach are given: (1) we calculate the luminescence spectrum of the NV center in diamond and the T center in Si and (2) we obtain dilute-limit configuration coordinate diagrams for these defects. In particular, we find that coupling to acoustic phonon modes reduces the accepting-mode frequency in the configuration coordinate diagram. Our work provides the missing ingredients necessary to address truly dilute-limit transitions at defects.

cond-mat.mtrl-sci↗

arXiv2026

Native defects and erbium impurities in CaWO4

We perform hybrid density functional calculation to study the energetics, electronic properties, optical transitions, and migration barriers of native defects in CaWO$_4$. Oxygen and calcium vacancies are most likely to form in the absence of doping, but interstitials could also incorporate. Tungsten-related defects are unlikely to be present. The positively charged $V_{\rm O}$ and the negatively charged $V_{\rm Ca}$ are likely to form complexes. Calculated optical transition levels indicate that experimentally observed absorption and emission peaks can be attributed mainly to oxygen-related defects. Calculations of migration barriers allow us to conclude that Ca$_i^{2+}$, $V_{\rm O}^{2+}$ and O$_i^{2-}$ are highly mobile, even below room temperature. We have also examined Er dopants, finding that erbium easily substitutes on the Ca site in a positive charge state. Erbium can form complexes with $V_{\rm Ca}$ and O$_i$, which would deactivate the Er. If Er is introduced by implantation, Er interstitials are likely present, which will produce emission that is prone to spectral diffusion and blinking. Our calculated properties of Er$_i$ explain why annealing at modest temperatures allows the interstitials to move into substitutional sites and point defects to move away, resulting in stable emission.

cond-mat.mtrl-sci↗

arXiv2026

Charge dynamics at nitrogen impurities and nitrogen-vacancy centers in diamond

The nitrogen-vacancy (NV) center in diamond is the prototype quantum defect that enables a variety of diamond-based quantum technologies. However, charge-state instability and spectral diffusion, often induced by substitutional nitrogen impurities (N$_{\rm C}$), remain key challenges for device performance. Here, we employ first-principles density functional theory calculations to quantitatively investigate nonradiative carrier capture processes mediated by multiphonon emission at both the NV center and the N$_{\rm C}$ impurity. For relevant cases, we also compute the rates of radiative and thermal emission processes. For N$_{\rm C}^0$ $\to$ N$_{\rm C}^-$, we obtain an electron capture coefficient of $2.2 \times 10^{-8}$ cm$^3$s$^{-1}$ at 300 K. Both the magnitude and temperature dependence are in excellent agreement with experimentally measured capture cross sections. Electron capture at N$_{\rm C}^+$ is even faster, with a capture coefficient of $1.0 \times 10^{-4}$ cm$^3$s$^{-1}$ at 300 K. For the NV center, we find that carrier capture rates involving only the ground states of NV$^0$ and NV$^-$ are negligibly slow. However, capture into the excited states (NV$^{0*}$ and NV$^{-*}$) is significantly faster. In particular, the capture coefficient for the hole capture process NV$^-$ $\to$ NV$^{0*}$ is as large as $1.8 \times 10^{-7}$ cm$^3$s$^{-1}$ and largely temperature-independent. Hole capture at NV$^-$ will thus occur via nonradiative capture into an excited state of NV$^{0}$ followed by fast radiative decay to the NV$^0$ ground state. Similarly, electron capture at NV$^0$ will occur via the NV$^0$ $\to$ NV$^{-*}$ $\to$ NV$^-$ pathway, but with a lower nonradiative capture coefficient ($2.1 \times 10^{-9}$ cm$^3$s$^{-1}$ at 300 K). Our calculated capture coefficients and rates provide essential information for analyzing charge-state dynamics.

cond-mat.mtrl-sci↗

arXiv2026

Impact of Absorption due to Zero-Field Splitting on Loss in Dielectrics: A Case Study in Sapphire

The coherence times of superconducting qubits are limited by loss mechanisms, whose microscopic origins have remained elusive. We propose a mechanism caused by transitions between zero-field-split states of paramagnetic impurities or defects. We derive the absorption cross section for a magnetic dipole transition and apply it to calculate the loss tangent. For Cr, Fe, and V impurities in sapphire, we find loss tangents at 4.5 GHz in the range of 10$^{-9}$-10$^{-8}$, comparable to the loss measured in experiments. This value suggests that magnetic loss may be a limiting factor in the coherence times of superconducting qubits.

quant-ph↗

arXiv2026

A defect in diamond with millisecond-scale spin relaxation time at room temperature

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a $T_1$ of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed $T_1$ is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time ($T_2$) is 246(7) $μ$s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

cond-mat.mtrl-sci↗

arXiv2025

Resonant states and nuclear dynamics in solid-state systems: the case of silicon-hydrogen bond dissociation

Bond breaking in the presence of highly energetic carriers is central to many important phenomena in physics and chemistry, including radiation damage, hot-carrier degradation, activation of dopant-hydrogen complexes in semiconductors, and photocatalysis. Describing these processes from first principles has remained an elusive goal. Here we introduce a comprehensive theoretical framework for the dissociation process, emphasizing the need for a non-adiabatic approach. We benchmark the results for the case of silicon-hydrogen bond dissocation, a primary process for hot-carrier degradation. Passivation of Si dangling bonds by hydrogen is vital in all Si devices because it eliminates electrically active mid-gap states; understanding the mechanism for dissociation of these bonds is therefore crucial for device technology. While the need for a non-adiabatic approach has been previously recognized, explicitly obtaining diabatic states for solid-state systems has been an outstanding challenge. We demonstrate how to obtain these states by applying a partitioning scheme to the Hamiltonian obtained from first-principles density functional theory. Our results demonstrate that bond dissociation can occur when electrons temporarily occupy the antibonding states, generating a highly repulsive excited-state potential that causes the hydrogen nuclear wavepacket to shift and propagate rapidly. Based on the Menzel-Gomer-Redhead (MGR) model, we show that after moving on this excited-state potential on femtosecond timescales, a portion of the nuclear wavepacket can continue to propagate even after the system relaxes back to the ground state, allowing us to determine the dissociation probability. Our results provide essential insights into the fundamental processes that drive carrier-induced bond breaking in general, and specifically elucidate hydrogen-related degradation in Si devices.

cond-mat.mtrl-sci↗

arXiv2025

Giant Isotope Effect on the Excited-State Lifetime and Emission Efficiency of the Silicon T Centre

Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T centre, a telecommunications-band emitter in silicon, and find a strong isotope dependence of its excited-state lifetime. In particular, the lifetime of the deuterium T centre is over five times longer than the common protium variant. Through explicit first-principles calculations, we demonstrate that this dramatic difference is due to a reduction in the carbon-hydrogen local vibrational mode energy, which suppresses non-radiative decay. Our results imply that the deuterium T centre approaches unit quantum efficiency, enabling more efficient single-photon sources, quantum memories, and entanglement generation.

quant-ph↗

arXiv2025

Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of Defects

The optical properties of defects in solids produce rich physics, from gemstone coloration to single-photon emission for quantum networks. Essential to describing optical transitions is electron-phonon coupling, which can be predicted from first principles but requires computationally expensive evaluation of all phonon modes in simulation cells containing hundreds of atoms. We demonstrate that this bottleneck can be overcome using machine learning interatomic potentials with negligible accuracy loss. A key finding is that atomic relaxation data from routine first-principles calculations suffice as a dataset for fine-tuning, though additional data can further improve models. The efficiency of this approach enables studies of defect vibrational properties with high-level theory. We fine-tune to hybrid functional calculations to obtain highly accurate spectra, comparing with explicit calculations and experiments for various defects. Notably, we resolve fine details of local vibrational mode coupling in the luminescence spectrum of the T center in Si, a prominent quantum defect.

cond-mat.mtrl-sci↗

arXiv2025

Approximate Excited-State Potential Energy Surfaces for Defects in Solids

A description of electron-phonon coupling at a defect or impurity is essential to characterizing and harnessing its functionality for a particular application. Electron-phonon coupling limits the amount of useful light produced by a single-photon emitter and can destroy the efficiency of optoelectronic devices by enabling defects to act as recombination centers. Information on atomic relaxations in the excited state of the center is needed to assess electron-phonon coupling but may be inaccessible due to failed convergence or computational expense. Here we develop an approximation technique to quantify electron-phonon coupling using only the forces of the excited state evaluated in the equilibrium geometry of the ground state. The approximations are benchmarked on well-studied defect systems, namely C$_{\rm N}$ in GaN, the nitrogen-vacancy center in diamond, and the carbon dimer in h-BN. We demonstrate that the zero-phonon line energy can be approximated with just a single mode, while the Huang-Rhys factor converges by including displacements up to the second nearest neighbors. This work also provides important insight into the success of the widely utilized one-dimensional accepting-mode approximation, specifically demonstrating that the accepting-mode Huang-Rhys factor is a strict upper bound on the full multidimensional Huang-Rhys factor.

cond-mat.mtrl-sci↗

arXiv2025

Carbon in GaN as a nonradiative recombination center

Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon ($\mathrm{C_N}$) has been suggested to be a nonradiative recombination center in GaN devices, a complete recombination cycle including the two charge-state transition levels has not been previously described. In this work, we investigate the trap-assisted recombination process due to $\mathrm{C_N}$ in GaN, including multiphonon emission (MPE), radiative recombination, trap-assisted Auger-Meitner (TAAM) recombination, as well as thermal emission of holes. Our study shows the key role of TAAM processes at the high carrier densities relevant for devices. We also reveal the carrier-density regimes where thermal emission and radiative recombination are expected to play an observable role. Our results highlight that carbon concentrations exceeding $\sim$10$^{17}$ cm$^{-3}$ can have a noticeable impact on device efficiency, not just in GaN active layers but also in InGaN and AlGaN. Our comprehensive formalism not only offers detailed results for carbon but provides a general framework for assessing the multiple processes that participate in trap-assisted recombination in semiconductors.

cond-mat.mtrl-sci↗

arXiv2024

Characterization of Chromium Impurities in $β$-Ga$_2$O$_3$

Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al$_2$O$_3$, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behavior of Cr in Ga$_2$O$_3$ through theoretical and experimental techniques. $β$-Ga$_2$O$_3$ samples are grown with the floating zone method and show evidence of a sharp photoluminescence signal, reminiscent of ruby. We calculate the energetics of formation of Cr from first principles, demonstrating that Cr preferentially incorporates as a neutral impurity on the octahedral site. Cr possesses a quartet ground-state spin and has an internal transition with a zero-phonon line near 1.8 eV. By comparing the calculated and experimentally measured luminescence lineshape function, we elucidate the role of coupling to phonons and uncover features beyond the Franck-Condon approximation. The combination of strong emission with a small Huang-Rhys factor of 0.05 and a technologically relevant host material render Cr in Ga$_2$O$_3$ attractive as a quantum defect.

cond-mat.mtrl-sci↗

arXiv2024

First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretical predictions of a "pseudo-direct" band gap, characterized by weak oscillator strength, contrast with a claimed high radiative recombination coefficient $B$ comparable to conventional (cubic) InAs. We compute $B$ in 2H-Ge from first principles and quantify its dependence on temperature, carrier density and strain. For unstrained 2H-Ge, our calculated spontaneous emission spectra corroborate that measured photoluminescence corresponds to direct-gap emission, but with $B$ being approximately three orders of magnitude lower than in InAs. We confirm a pseudo-direct- to direct-gap transition under $\sim 2$\% [0001] uniaxial tension, which can enhance $B$ by up to three orders of magnitude, making it comparable to that of InAs. Beyond quantifying strong enhancement of $B$ via strain engineering, our analysis suggests the dominance of additional, as-yet unquantified recombination mechanisms in this nascent material.

cond-mat.mtrl-sci↗

arXiv2024

Dielectric Loss due to Charged-Defect Acoustic Phonon Emission

The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to the presence of charged defects that enable the absorption of electromagnetic radiation by the emission of acoustic phonons. Our explicit derivation of the absorption coefficient for this mechanism allows us to derive a loss tangent of $7.2 \times 10^{-9}$ for Al$_2$O$_3$, in good agreement with recent high-precision measurements [A. P. Read et al., Phys. Rev. Appl. 19, 034064 (2023)]. We also find that for temperatures well below ~0.2 K, the loss should be independent of temperature, also in agreement with observations. Our investigations show that the loss per defect depends mainly on properties of the host material, and a high-throughput search suggests that diamond, cubic BN, AlN, and SiC are optimal in this respect.

quant-ph↗

arXiv2024

Rational Design of Efficient Defect-Based Quantum Emitters

Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency.

cond-mat.mtrl-sci↗

arXiv2022

Trap-Assisted Auger-Meitner Recombination from First Principles

Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multi-phonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here we highlight the role of trap-assisted Auger-Meitner (TAAM) recombination, and present a first-principles methodology to determine TAAM rates due to defects or impurities in semiconductors or insulators. We assess the impact on efficiency of light emitters in a recombination cycle that may include both TAAM and carrier capture via MPE. We apply the formalism to the technologically relevant case study of a calcium impurity in InGaN, where a Shockley-Read-Hall recombination cycle involving MPE alone cannot explain the experimentally observed nonradiative loss. We find that, for band gaps larger than 2.5 eV, the inclusion of TAAM results in recombination rates that are orders of magnitude larger than recombination rates based on MPE alone, demonstrating that TAAM can be a dominant nonradiative process in wide-band-gap materials. Our computational formalism is general and can be applied to the calculation of TAAM rates in any semiconducting or insulating material.

cond-mat.mtrl-sci↗

arXiv2022

Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride

Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters' electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation spectroscopy. Several quantum emitters exhibit ideal single-photon emission with noise-limited photon antibunching, $g^{(2)}(0)=0$. The photoluminescence emission lineshapes are consistent with individual vibronic transitions. However, polarization-resolved excitation and emission suggests the role of multiple optical transitions, and photon emission correlation spectroscopy reveals complicated optical dynamics associated with excitation and relaxation through multiple electronic excited states. We compare the experimental results to quantitative optical dynamics simulations, develop electronic structure models that are consistent with the observations, and discuss the results in the context of ab initio theoretical calculations.

cond-mat.mes-hall↗

arXiv2020

Nonrad: Computing Nonradiative Capture Coefficients from First Principles

Point defects in semiconductor crystals provide a means for carriers to recombine nonradiatively. This recombination process impacts the performance of devices. We present the Nonrad code that implements the first-principles approach of Alkauskas et al. [Phys. Rev. B 90, 075202 (2014)] for the evaluation of nonradiative capture coefficients based on a quantum-mechanical description of the capture process. An approach for evaluating electron-phonon coupling within the projector augmented wave formalism is presented. We also show that the common procedure of replacing Dirac delta functions with Gaussians can introduce errors into the resulting capture rate, and implement an alternative scheme to properly account for vibrational broadening. Lastly, we assess the accuracy of using an analytic approximation to the Sommerfeld parameter by comparing with direct numerical evaluation.

cond-mat.mtrl-sci↗