arXiv subjects

Mark Friesen

Publications and source records attributed to Mark Friesen.

At least 127 records · Page 7Linked to original sources

arXiv2011

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.

cond-mat.mes-hall↗

arXiv2011

Heisenberg Spin Bus as a Robust Transmission Line for Perfect State Transfer

We study the protocol known as quantum state transfer for a strongly coupled antiferromagnetic spin chain or ring (acting as a spin bus), with weakly coupled external qubits. By treating the weak coupling as a perturbation, we find that perfect state transfer (PST) is possible when second order terms are included in the expansion. We also show that PST is robust against variations in the couplings along the spin bus and between the bus and the qubits. As evidence of the quantum interference which mediates PST, we show that the optimal time for PST can be smaller with larger qubit separations, for an even-size chain or ring.

quant-ph↗

arXiv2010

Tunable spin-selective loading of a silicon spin qubit

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.

cond-mat.mes-hall↗

arXiv2010

Extended interface states enhance valley splitting in Si/SiO2

Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive effect occurring at Si/SiO2 interfaces. By applying tight binding methods, we show that intrinsic interface states can hybridize with conventional valley states, leading to a large ground state energy gap. The effects of hybridization have not previously been explored in details for valley splitting. We find that valley splitting is enhanced in the presence of disordered chemical bonds, in agreement with recent experiments.

cond-mat.mes-hall↗

arXiv2010

Even-Odd Effects of Heisenberg Chains on Long-range Interaction and Entanglement

A strongly coupled Heisenberg chain provides an important channel for quantum communication through its many-body ground state. Yet, the nature of the effective interactions and the ability to mediate long-range entanglement differs significantly for chains of opposite parity. Here, we contrast the characters of even and odd-size chains when they are coupled to external qubits. Additional parity effects emerge in both cases, depending on the positions of the attached qubits. Some striking results include (i) the emergence of maximal entanglement and (ii) Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions for qubits attached to an even chain, and (iii) the ability of chains of either parity to mediate qubit entanglement that is undiminished by distance.

quant-ph↗

arXiv2010

Valley splitting in a Si/SiGe quantum point contact

We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is developed for a QPC formed in a quantum well, grown on a miscut substrate. Both theory and experiments include a perpendicular magnetic field. Our results indicate that both QPC and magnetic confinement can enhance the valley splitting by reducing the spatial extent of the electronic wavefunction. Consequently, the valley splitting can be much larger than the spin splitting for small magnetic fields. We also observe different valley splittings for different transverse modes in the QPC, supporting the notion that when steps are present at the quantum well interface, the spatial extent of the wavefunction plays a dominant role in determining the valley splitting.

cond-mat.mes-hall↗

arXiv2010

Theory of valley-orbit coupling in a Si/SiGe quantum dot

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular magnetic fields, and (most importantly for valley coupling) the small local tilt of the quantum well interface away from the crystallographic axes. In absence of a tilt, valley splitting occurs only between pairs of states with the same orbital quantum numbers. However, tilting is ubiquitous in conventional silicon heterostructures, leading to valley-orbit coupling. In this context, "valley splitting" is no longer a well defined concept, and the quantity of merit for qubit applications becomes the ground state gap. For typical dots used as qubits, a rich energy spectrum emerges, as a function of magnetic field, tilt angle, and orbital quantum number. Numerical and analytical solutions are obtained for the ground state gap and for the mixing fraction between the ground and excited states. This mixing can lead to valley scattering, decoherence, and leakage for Si spin qubits.

cond-mat.mes-hall↗

arXiv2010

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach.

cond-mat.mes-hall↗

arXiv2010

Two-particle quantum walks applied to the graph isomorphism problem

We show that the quantum dynamics of interacting and noninteracting quantum particles are fundamentally different in the context of solving a particular computational problem. Specifically, we consider the graph isomorphism problem, in which one wishes to determine whether two graphs are isomorphic (related to each other by a relabeling of the graph vertices), and focus on a class of graphs with particularly high symmetry called strongly regular graphs (SRG's). We study the Green's functions that characterize the dynamical evolution single-particle and two-particle quantum walks on pairs of non-isomorphic SRG's and show that interacting particles can distinguish non-isomorphic graphs that noninteracting particles cannot. We obtain the following specific results: (1) We prove that quantum walks of two noninteracting particles, Fermions or Bosons, cannot distinguish certain pairs of non-isomorphic SRG's. (2) We demonstrate numerically that two interacting Bosons are more powerful than single particles and two noninteracting particles, in that quantum walks of interacting bosons distinguish all non-isomorphic pairs of SRGs that we examined. By utilizing high-throughput computing to perform over 500 million direct comparisons between evolution operators, we checked all tabulated pairs of non-isomorphic SRGs, including graphs with up to 64 vertices. (3) By performing a short-time expansion of the evolution operator, we derive distinguishing operators that provide analytic insight into the power of the interacting two-particle quantum walk.

quant-ph↗

arXiv2008

Multiscale theory of valley splitting

The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However, the complexity and size of a realistic device precludes an analytical atomistic description. Here, we develop a fully analytical multiscale theory of valley coupling, by combining effective mass and tight binding approaches. The results are of particular interest for silicon qubits and quantum devices, but also provide insight for GaAs quantum wells.

cond-mat.mes-hall↗

arXiv2007

Controllable valley splitting in silicon quantum devices

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.

cond-mat.mes-hall↗

arXiv2007

Efficient multiqubit entanglement via a spin-bus

We propose an experimentally feasible architecture with controllable long-range couplings built up from local exchange interactions. The scheme consists of a spin-bus, with strong, always-on interactions, coupled dynamically to external qubits of the Loss and DiVincenzo type. Long-range correlations are enabled by a spectral gap occurring in a finite-size chain. The bus can also form a hub for multiqubit entangling operations. We show how multiqubit gates may be used to efficiently generate $W$-states (an important entanglement resource). The spin-bus therefore provides a route for scalable solid-state quantum computation, using currently available experimental resources.

quant-ph↗

arXiv2006

Spectroscopy of Valley Splitting in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas

The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a linear magnetic field dependence of the valley splitting, and a strong low-field suppression, consistent with recent theory. The resonance linewidth shows a marked enhancement above $T\simeq 300$ mK.

cond-mat.mes-hall↗

arXiv2006

Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells

The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the quantum well interface may explain the unexpected, strong suppression of the valley splitting observed in recent experiments. The authors find that the suppression is caused by an interference effect associated with multiple steps, and that the magnetic field dependence arises from the lateral confinement of the electronic wave function. Using numerical simulations, the authors clarify the role of step disorder, obtaining quantitative agreement with the experiments.

cond-mat.mes-hall↗

arXiv2006

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.

cond-mat.mtrl-sci↗

arXiv2006

Elastically Relaxed Free-standing Strained-Si Nanomembranes

Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain state is controlled by elastic strain sharing, i.e., without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray diffraction measurements confirm a final strain predicted by elasticity theory. The effec-tiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longi-tudinal-Hall effect measurements on a strained-Si quantum well before and after release. Elastic strain sharing and film transfer offers an intriguing path towards complex, multiple-layer struc-tures in which each layer's properties are controlled elastically, without the introduction of unde-sirable defects.

cond-mat.mes-hall↗

arXiv2006

Detection and measurement of the Dzyaloshinskii-Moriya interaction in double quantum dot systems

Spins in quantum dots can act as the qubit for quantum computation. In this context we point out that spins on neighboring dots will experience an anisotropic form of the exchange coupling, called the Dzyaloshinskii-Moriya (DM) interaction, which mixes the spin singlet and triplet states. This will have an important effect on both qubit interactions and spin-dependent tunneling. We show that the interaction depends strongly on the direction of the external field, which gives an unambiguous signature of this effect. We further propose a new experiment using coupled quantum dots to detect and characterize the DM interaction.

cond-mat.mtrl-sci↗

arXiv2005

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied.

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