arXiv subjects

Mark T. Greenaway

Publications and source records attributed to Mark T. Greenaway.

4 recordsLinked to original sources

arXiv2026

Effects of high-order Van Hove singularities on exciton and trion energy dispersions

We investigate the effects of Van Hove singularities in the electronic band structure of two-dimensional semiconductors on the energy dispersion of excitons and positive trions. In particular, we study valence band energy dispersions which possess (i) a typical logarithmic Van Hove singularity, (ii) a line high-order Van Hove singularity (HOVHS) from a Mexican-hat dispersion or (iii) a point HOVHS such as a monkey saddle. We find that the density of states (DOS) of excitons and trions containing such singularities is dramatically enhanced and shows, in general, how the HOVHS in the valence band can strongly affect and be mirrored in the DOS of excitons and trions. This leads to new states that govern the optical properties of the system. In addition, we study a set of materials, InSe, GaSe and $α$-SnAs, from a class of materials in which the topmost valence band has an inverted Mexican-hat shape. The most favourable exciton occurs when the singularity is at the $Γ$-point, as in the example of monolayer $α$-SnAs, which hosts a HOVHS. Our work thus provides a pathway to engineer specific bound states in two-dimensional materials that host such singularities, thereby opening new avenues for potential applications.

cond-mat.mes-hall↗

arXiv2025

Brightening dark excitons and trions in systems with a Mexican-hat energy dispersion: example of InSe

We investigate the properties of momentum-dark excitons and trions formed in two-dimensional (2D) materials that exhibit an inverted Mexican-hat-shaped dispersion relation, taking monolayer InSe as an example. We employ variational techniques to obtain the momentum-dark and bright ground-states (non-zero and zero quasiparticle momenta, respectively). These states are of particular interest due to their peaks in the quasiparticle density of states, the largest contribution comes from the momentum-dark ground state due to the presence of a van Hove singularity (VHS). These momentum-dark systems require a physical process to provide the necessary momentum to become bright. We study the brightening of this state due to coupling with phonons and compute the resulting photoluminescence spectrum. This work opens new avenues of research, such as exploiting dark excitons in solar cells and other semiconductor-based optoelectronic devices.

cond-mat.mes-hall↗

arXiv2020

Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities

Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's carrier mobility and the variation of its electrical conductance with carrier density. Our model of graphene conductivity is based on a convolution of carrier density and its uncertainty, which reproduces the observed universality. Taking a single conductance measurement as input, this model accurately predicts the full shape of the conductance versus carrier density curves for a wide range of reported graphene samples. We verify the convolution model by numerically solving the Boltzmann transport equation to analyse in detail the effects of charged impurity scattering on carrier mobility. In this model, we also include optical phonons, which relax high-energy charge carriers for small impurity densities. Our numerical and analytical results both capture the universality observed in experiment and provide a way to estimate all key transport parameters of graphene devices. Our results demonstrate how the carrier mobility can be predicted and controlled, thereby providing insights for engineering the properties of 2D materials and heterostructures.

cond-mat.mtrl-sci↗

arXiv2018

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode.

cond-mat.mes-hall↗