arXiv subjects

Mark W. Keller

Publications and source records attributed to Mark W. Keller.

17 recordsLinked to original sources

arXiv2026

Characterization of Silicon-Membrane TES Microcalorimeters for Large-Format X-ray Spectrometers with Integrated Microwave SQUID Readout

We present the electro-thermal characterization of transition-edge sensor (TES) detectors suspended on Si membranes fabricated using a silicon-on-insulator (SOI) wafer. The use of an all-silicon fabrication platform, in contrast to the more commonly used silicon nitride membranes, is compatible with monolithic fabrication of integrated TES and SQUID circuits. The all-silicon architecture additionally allows efficient use of focal plane area; the readout circuitry may be positioned out of the focal plane by bending a thinned portion of the chip. Compatibility with integrated fabrication and efficient use of focal plane area provide a path to an efficient soft X-ray spectrometer. This work is motivated by our goal to develop a 10,000-pixel TES spectrometer to overcome critical measurement limitations in catalysis research. The characterization of fragile, carbon-based intermediates via techniques like Resonant Inelastic X-ray Scattering (RIXS) is often precluded by the slow, high-flux nature of existing technologies. The new instrument will allow for fast RIXS measurements to be made without causing sample damage. We verify the detector models and measure the energy resolution using a pulsed optical laser, demonstrating the viability of this approach for the final instrument to be deployed at the National Synchrotron Light Source II (NSLS-II).

physics.ins-det↗

arXiv2025

Lithographic integration of TES microcalorimeters with SQUID multiplexer circuits for large format spectrometers

Arrays of hundreds or thousands of low temperature detectors have been deployed for many experiments, both bolometers for long wavelength applications and calorimeters for shorter wavelength applications. One challenge that is common to many of these arrays is the efficient use of focal plane area to achieve a large fill fraction of absorbers coupled to detectors. We are developing an integrated fabrication of soft X-ray transition edge sensors (TES) and microwave SQUID multiplexers ($μ$MUX) with the goal of maximizing the fill fraction of the focal plane area on a scale of many thousand pixel detectors. We will utilize lithographically defined high density interconnects to circumvent limitations in existing solutions that use wirebonds or flip-chip bonds. Here we report the first demonstration of combining TES and $μ$MUX processes into a single TES-System-on-a-Chip (TES-SoC) fabrication on a silicon wafer. The $μ$MUX SQUIDs and TES electrothermal feedback circuits are microfabricated first and protected with passivating SiO$_2$, then the TES devices and TES-to-SQUID interconnects are fabricated, and finally the protective layer is removed before the fabrication of the microwave resonators. We show that the microwave SQUIDs are functional and have reasonable yield, and that we are able to read out the transition temperature of the connected TESs using those SQUIDs.

physics.ins-det↗

arXiv2025

Detecting and Correcting Gain Jumps in TES Microcalorimeters

Arrays of microcalorimeters based on transition-edge sensors (TESs) are being actively deployed to laboratories all over the world. A TES microcalorimeter array produces very large quantities of data and users of these devices have varying levels of experience, so it is important to provide robust software for data acquisition and analysis that can function with minimal user supervision. This software should be capable of addressing common phenomena that can adversely affect spectrum quality. Gain jumping is one such phenomenon that is characterized by abrupt changes in the gain of a device. Left unaddressed, gain jumps can degrade spectra by introducing false peaks. We are not aware of any previously published methods for resetting gain jumps during data acquisition or existing algorithms for correcting data that is degraded by gain jumps. We have developed automated methods for detecting and correcting gain jumps in gamma-ray TES microcalorimeters. We present a procedure for resetting gain jumps during a live data acquisition that involves briefly driving the TES into its normal state using the bias current. We also describe an algorithm for locating gain jumps and identifying unique gain states within existing microcalorimeter data. Finally, we provide a possible approach for correcting gain jumps after they have been identified.

physics.ins-det↗

arXiv2025

Distinct element-specific nanoscale magnetization dynamics following ultrafast laser excitation

Time-resolved ultrafast extreme ultraviolet (EUV) magnetic scattering is used to study laser-driven ultrafast magnetization dynamics of labyrinthine domains in a [Co/Ni/Pt] multilayer. Our measurements at the Co and Ni M-edges reveal distinct ultrafast distortions of the scattering pattern position and width for Ni compared to Co. Ni shows a strong modification of the scattering pattern, approximately 10 to 40 times stronger than Co. As distortions of the labyrinthine pattern in reciprocal space relate to the modification of domain textures in real space, significant differences in Co and Ni highlight a 3D distortion of the domain pattern in the far-from-equilibrium regime.

cond-mat.mtrl-sci↗

arXiv2023

Evidence of extreme domain wall speeds under ultrafast optical excitation

Time-resolved ultrafast EUV magnetic scattering was used to test a recent prediction of >10 km/s domain wall speeds by optically exciting a magnetic sample with a nanoscale labyrinthine domain pattern. Ultrafast distortion of the diffraction pattern was observed at markedly different timescales compared to the magnetization quenching. The diffraction pattern distortion shows a threshold-dependence with laser fluence, not seen for magnetization quenching, consistent with a picture of domain wall motion with pinning sites. Supported by simulations, we show that a speed of $\approx$ 66 km/s for highly curved domain walls can explain the experimental data. While our data agree with the prediction of extreme, non-equilibrium wall speeds locally, it differs from the details of the theory, suggesting that additional mechanisms are required to fully understand these effects.

cond-mat.mes-hall↗

arXiv2022

Megahertz-rate Ultrafast X-ray Scattering and Holographic Imaging at the European XFEL

The advent of X-ray free-electron lasers (XFELs) has revolutionized fundamental science, from atomic to condensed matter physics, from chemistry to biology, giving researchers access to X-rays with unprecedented brightness, coherence, and pulse duration. All XFEL facilities built until recently provided X-ray pulses at a relatively low repetition rate, with limited data statistics. Here, we present the results from the first megahertz repetition rate X-ray scattering experiments at the Spectroscopy and Coherent Scattering (SCS) instrument of the European XFEL. We illustrate the experimental capabilities that the SCS instrument offers, resulting from the operation at MHz repetition rates and the availability of the novel DSSC 2D imaging detector. Time-resolved magnetic X-ray scattering and holographic imaging experiments in solid state samples were chosen as representative, providing an ideal test-bed for operation at megahertz rates. Our results are relevant and applicable to any other non-destructive XFEL experiments in the soft X-ray range.

cond-mat.mes-hall↗

arXiv2021

Symmetry-dependent ultrafast manipulation of nanoscale magnetic domains

Symmetry is a powerful concept in physics, but its applicability to far-from-equilibrium states is still being understood. Recent attention has focused on how far-from-equilibrium states lead to spontaneous symmetry breaking. Conversely, ultrafast optical pumping can be used to drastically change the energy landscape and quench the magnetic order parameter in magnetic systems. Here, we find a distinct symmetry-dependent ultrafast behaviour by use of ultrafast x-ray scattering from magnetic patterns with varying degrees of isotropic and anisotropic symmetry. After pumping with an optical laser, the scattered intensity reveals a radial shift exclusive to the isotropic component and exhibits a faster recovery time from quenching for the anisotropic component. These features arise even when both symmetry components are concurrently measured, suggesting a correspondence between the excitation and the magnetic order symmetry. Our results underline the importance of symmetry as a critical variable to manipulate the magnetic order in the ultrafast regime.

cond-mat.mes-hall↗

arXiv2019

Near-Unity Spin Hall Ratio in Ni$_x$Cu$_{1-x}$ Alloys

We report a large spin Hall effect in the 3$d$ transition metal alloy Ni$_x$Cu$_{1-x}$ for $x\in\left\{ 0.3,0.75\right\} $, detected via the ferromagnetic resonance of a Permalloy (Py = Ni$_{80}$Fe$_{20}$) film deposited in a bilayer with the alloy. A thickness series at $x$ = 0.6, for which the alloy is paramagnetic at room temperature, allows us to determine the spin Hall ratio $θ_{\rm{SH}}\approx1$, spin diffusion length $λ_{\rm{s}}$, spin mixing conductance $G_{\uparrow\downarrow}$, and damping $α_{\rm{SML}}$ due to spin memory loss . We compare our results with similar experiments on Py/Pt bilayers measured using the same method. Ab initio band structure calculations with disorder and spin-orbit coupling suggest an intrinsic spin Hall effect in Ni$_x$Cu$_{1-x}$ alloys, although the experiments here cannot distinguish between extrinsic and intrinsic mechanisms.

cond-mat.mes-hall↗

arXiv2015

Suppression of Spin Pumping Between Ni$_{80}$Fe$_{20}$ and Cu by a Graphene Interlayer

We compare ferromagnetic resonance measurements of Permalloy Ni$_{80}$Fe$_{20}$ (Py) films sputtered onto Cu(111) films with and without a graphene (Gr) interlayer grown by chemical vapor deposition before Py deposition. A two-angle sputtering method ensured that neither Gr nor Py was degraded by the sample preparation process. We find the expected damping enhancement from spin pumping for the Py/Cu case and no detectable enhancement for the Py/Gr/Cu case. Since damping is sensitive to effects other than spin pumping, we used magnetometry to verify that differences in Py magnetostatic properties are not responsible for the difference in damping. We attribute the suppression of spin pumping in Py/Gr/Cu to the large contact resistance of the Gr/Cu interface.

cond-mat.mes-hall↗

arXiv2014

Controlling the electronic structure of graphene using surface-adsorbate interactions

We show that strong coupling between graphene and the substrate is mitigated when 0.8 monolayer of Na is adsorbed and consolidated on top graphene-on-Ni(111). Specifically, the π state is partially restored near the K-point and the energy gap between the π and π* states reduced to 1.3 eV after adsorption, as measured by angle-resolved photoemission spectroscopy. We show that this change is not caused by intercalation of Na to underneath graphene but it is caused by an electronic coupling between Na on top and graphene. We show further that graphene can be decoupled to a much higher extent when Na is intercalated to underneath graphene. After intercalation, the energy gap between the π and π* states is reduced to 0 eV and these states are identical as in freestanding and n-doped graphene. We conclude thus that two mechanisms of decoupling exist: a strong decoupling through intercalation, which is the same as one found using noble metals, and a weak decoupling caused by electronic interaction with the adsorbate on top.

cond-mat.mtrl-sci↗

arXiv2013

Giant Secondary Grain Growth in Cu Films on Sapphire

Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001) can be transformed into Cu(111) with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

cond-mat.mtrl-sci↗

arXiv2012

Epitaxial (111) Films of Cu, Ni, and Cu$_xNi$_y$ on α-Al$_2$O$_3$(0001) for Graphene Growth by Chemical Vapor Deposition

Films of (111)-textured Cu, Ni, and Cu$_x$Ni$_y$ were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a substrate of $α-$Al$_2$O$_3$(0001) at temperatures of 250 C to 650 C. The films were then annealed at 1000 C in a tube furnace. X-ray and electron backscatter diffraction measurements showed all films have (111) texture but have grains with in-plane orientations differing by $60^{\circ}$. The in-plane epitaxial relationship for all films was $[110]_{metal}$||$[10\bar{1}0]_{{Al}_{2}{O}_{3}}$. Reactive sputtering of Al in O$_2$ before metal deposition resulted in a single in-plane orientation over 97 % of the Ni film but had no significant effect on the Cu grain structure. Transmission electron microscopy showed a clean Ni/Al$_2$O$_3$ interface, confirmed the epitaxial relationship, and showed that formation of the $60^{\circ}$ twin grains was associated with features on the Al$_2$O$_3$ surface. Increasing total pressure and Cu vapor pressure during annealing decreased the roughness of Cu and and Cu$_x$Ni$_y$ films. Graphene grown on the Ni(111) films was more uniform than that grown on polycrystalline Ni/SiO$_2$ films, but still showed thickness variations on a much smaller length scale than the distance between grains.

cond-mat.mtrl-sci↗

arXiv2010

Theory for a dissipative droplet soliton excited by a spin torque nanocontact

A novel type of solitary wave is predicted to form in spin torque oscillators when the free layer has a sufficiently large perpendicular anisotropy. In this structure, which is a dissipative version of the conservative droplet soliton originally studied in 1977 by Ivanov and Kosevich, spin torque counteracts the damping that would otherwise destroy the mode. Asymptotic methods are used to derive conditions on perpendicular anisotropy strength and applied current under which a dissipative droplet can be nucleated and sustained. Numerical methods are used to confirm the stability of the droplet against various perturbations that are likely in experiments, including tilting of the applied field, non-zero spin torque asymmetry, and non-trivial Oersted fields. Under certain conditions, the droplet experiences a drift instability in which it propagates away from the nanocontact and is then destroyed by damping.

cond-mat.mtrl-sci↗

arXiv2010

Non-white frequency noise in spin torque oscillators and its effect on spectral linewidth

We measure the power spectral density of frequency fluctuations in nanocontact spin torque oscillators over time scales up to 50 ms. We use a mixer to convert oscillator signals ranging from 10 GHz to 40 GHz into a band near 70 MHz before digitizing the time domain waveform. We analyze the waveform using both zero crossing time stamps and a sliding Fourier transform, discuss the different limitations and advantages of these two methods, and combine them to obtain a frequency noise spectrum spanning more than five decades of Fourier frequency $f$. For devices having a free layer consisting of either a single Ni$_{\text{}80}$Fe$_{\text{}20}$ layer or a Co/Ni multilayer we find a frequency noise spectrum that is white at large $f$ and varies as \emph{$1/f$} at small $f$. The crossover frequency ranges from $\approx\unit[10^{4}]{Hz}$ to $\approx\unit[10^{6}]{Hz}$ and the $1/f$ component is stronger in the multilayer devices. Through actual and simulated spectrum analyzer measurements, we show that $1/f$ frequency noise causes both broadening and a change in shape of the oscillator's spectral line as measurement time increases. Our results indicate that the long term stability of spin torque oscillators cannot be accurately predicted from models based on thermal (white) noise sources.

cond-mat.other↗

arXiv2009

Spin Transfer Dynamics in Spin Valves with Out-of-plane Magnetized CoNi Free Layers

We have measured spin transfer-induced dynamics in magnetic nanocontact devices having a perpendicularly magnetized Co/Ni free layer and an in-plane magnetized CoFe fixed layer. The frequencies and powers of the excitations agree well with the predictions of the single-domain model and indicate that the excited dynamics correspond to precessional orbits with angles ranging from zero to 90 degrees as the applied current is increased at a fixed field. From measurements of the onset current as a function of applied field strength we estimate the magnitude of the spin torque asymmetry parameter lambda ~ 1.5. By combining these with spin torque ferromagnetic resonance measurements, we also estimate the spin wave radiation loss in these devices.

cond-mat.mes-hall↗

arXiv2009

Time domain measurement of phase noise in a spin torque oscillator

We measure oscillator phase from the zero crossings of the voltage vs. time waveform of a spin torque nanocontact oscillating in a vortex mode. The power spectrum of the phase noise varies with Fourier frequency $f$ as $1/f^2$, consistent with frequency fluctuations driven by a thermal source. The linewidth implied by phase noise alone is about 70 % of that measured using a spectrum analyzer. A phase-locked loop reduces the phase noise for frequencies within its 3 MHz bandwidth.

cond-mat.mes-hall↗

arXiv2003

Nonequilibrium quasiparticles and $2e$ periodicity in single-Cooper-pair transistors

We have fabricated single-Cooper-pair transistors in which the spatial profile of the superconducting gap energy was controlled by oxygen doping. The profile dramatically affects the switching current \textit{vs.} gate voltage curve of the transistor, changing its period from $1e$ to $2e$. A model based on nonequilibrium quasiparticles in the leads explains our results, including the surprising observation that even devices with a clean $2e$ period are ``poisoned'' by small numbers of these quasiparticles.

cond-mat.supr-con↗