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Marko J. Rančić

Publications and source records attributed to Marko J. Rančić.

23 records · Page 2Linked to original sources

Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions

We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires (NWs). The NW core in our model has a rectangular cross section, the results for a square cross section are presented in detail. In the case of Ge and Ge/Si core/shell NWs, we obtain very good agreement with previous theoretical results for cylindrically symmetric NWs. In particular, the NWs allow for an unusually strong and electrically controllable spin-orbit interaction (SOI) of Rashba type. We find that the dominant contribution to the SOI is the "direct Rashba spin-orbit interaction" (DRSOI), which is an important mechanism for systems with heavy-hole-light-hole mixing. Our results for Si NWs depend significantly on the orientation of the crystallographic axes. The numerically observed dependence on the growth direction is consistent with analytical results from a simple model, and we identify a setup where the DRSOI enables spin-orbit energies of the order of millielectronvolts in Si NWs. Furthermore, we analyze the dependence of the SOI on the electric field and the cross section of the Ge or Si core. A helical gap in the spectrum can be opened with a magnetic field. We obtain the largest g factors with magnetic fields applied perpendicularly to the NWs.

cond-mat.mes-hall↗

Low-Error Operation of Spin Qubits with Superexchange Coupling

In this theoretical work we investigate superexchange, as a means of indirect exchange interaction between two single electron spin qubits, each embedded in a single semiconductor quantum dot (QD). The exchange interaction is mediated by an intermediate, empty QD. Our findings suggest the existence of first order "super sweet spots", in which the qubit operations implemented by superexchange interaction are simultaneously insensitive to charge noise and errors due to spin-orbit interaction. We also find that the sign of the superexchange can be changed by varying the energy detunings between the QDs.

cond-mat.mes-hall↗

Coherent manipulation of single electron spins with Landau-Zener sweeps

We propose a novel method to manipulate the state of a single electron spin in a semiconductor quantum dot (QD). The manipulation is achieved by tunnel coupling a QD, labeled $L$, and occupied with an electron to an adjacent QD, labeled $R$, which is not occupied by an electron but having an energy linearly varying in time. We identify a parameter regime in which a complete population transfer between the spin eigenstates $|L\uparrow\rangle$ and $|L\downarrow\rangle$ is achieved without occupying the adjacent QD. This method is convenient due to the fact that manipulation can be done electrically, without the precise knowledge of the spin resonance condition, and is robust against Zeeman level broadening caused by nuclear spins.

cond-mat.mes-hall↗

Electric dipole spin resonance in systems with a valley dependent g-factor

In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a situation in which the control of electron spin states is achieved by applying an oscillatory electric field, inducing real-space oscillations of the electron inside the quantum dot. One of the goals of our study is to present a microscopic theory of valley dependent $g$-factors in Si/SiGe quantum dots and investigate how valley relaxation combined with a valley dependent $g$-factor leads to a novel electron spin dephasing mechanism. Furthermore, we discuss the interplay of spin and valley relaxations in Si/SiGe quantum dots. Our findings suggest that the electron spin dephases due to valley relaxation, and are in agreement with recent experimental studies [Nature Nanotechnology 9, 666-670 (2014)].

cond-mat.mes-hall↗

Interplay of spin-orbit and hyperfine interactions in dynamical nuclear polarization in semiconductor quantum dots

We theoretically study the interplay of spin-orbit and hyperfine interactions in dynamical nuclear polarization in two-electron semiconductor double quantum dots near the singlet $(S)$ - triplet $(T_+)$ anticrossing. The goal of the scheme under study is to extend the singlet $(S)$ - triplet $(T_0)$ qubit decoherence time $T_2^{*}$ by dynamically transferring the polarization from the electron spins to the nuclear spins. This polarization transfer is achieved by cycling the electron spins over the $S-T_+$ anticrossing. Here, we investigate, both quantitatively and qualitatively, how this hyperfine mediated dynamical polarization transfer is influenced by the Rashba and Dresselhaus spin-orbit interaction. In addition to $T_2^*$, we determine the singlet return probability $P_s$, a quantity that can be measured in experiments. Our results suggest that the spin-orbit interaction establishes a mechanism that can polarize the nuclear spins in the opposite direction compared to hyperfine mediated nuclear spin polarization. In materials with relatively strong spin-orbit coupling, this interplay of spin-orbit and hyperfine mediated nuclear spin polarizations prevents any notable increase of the $S-T_0$ qubit decoherence time $T_2^{*}$.

cond-mat.mes-hall↗