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Marko Loncar

Publications and source records attributed to Marko Loncar.

At least 19 recordsLinked to original sources

Raman suppression in nanophotonics enabled by multimode spectral filtering

Miniaturized photonic cavities generating nonlinear optical states of light are central to telecommunications and metrology applications. The emergence of such states is primarily underpinned by the ubiquitous Kerr nonlinearity that is present in all media. However, stimulated Raman scattering (SRS), an additional process inherent to many materials, has been shown to critically hinder the states' formation, imposing fundamental constraints on the choice of photonic platforms. Here, we introduce a novel strategy for the suppression of SRS in nanophotonic devices, adaptable to diverse Raman spectral responses. This is achieved by controlling the coupling and loss among multiple transverse spatial modes of the system, tailored across ultrabroad spectral bandwidths. Specifically, we combine nanometrically-corrugated Bragg gratings and tapered waveguides that, together enable co-directional multimode coupling and mode-selective filtering. We use lithium niobate as an exemplary Raman-active material to realize the concept, and we demonstrate the robust generation of two distinct Kerr nonlinear states (corresponding to coherent optical frequency combs) using the fabricated devices. The simplicity and generality of the concept suggest wide applicability to classical and quantum light generation on many technologically-relevant platforms nominally plagued by SRS (e.g., silicon and diamond photonics). More broadly, our multimode spectral shaping and filtering concept opens a path forward for highly-structured, wavelength-specific losses in nanophotonic waveguides and cavities, with potential applications in ultrafast and nonlinear integrated photonics.

physics.optics

Understanding Intrinsic Loss in Thin-Film Lithium Niobate Ring Resonators via Adiabatic Coupling

Thin-film lithium niobate (TFLN) has emerged as a versatile integrated photonics platform, combining strong electro-optic and nonlinear effects. Among TFLN devices, ring resonators play a central role in filtering, modulation, and nonlinear optical processes. However, intrinsic loss, which ultimately limits ring performance, is most often summarized by single-valued metrics, and its statistical variability across resonances has received limited attention. Here, we show that intrinsic loss rates in monolithic TFLN ring resonators follow a statistical distribution, comprising a baseline loss and a tail arising from discrete loss events. This behavior is revealed by characterizing 2233 resonances, using an adiabatic waveguide-ring coupling architecture that selectively excites the fundamental mode and yields clean spectra in the ultra-high-Qi regime. We find the most probable intrinsic loss rate ki = 2 pi x 10.4 MHz, indicating operation in a low-loss regime comparable to state-of-the-art thick silicon nitride platforms.

physics.optics

Heterogeneously Integrated Diamond-on-Lithium Niobate Quantum Photonic Platform

Diamond photonics has enabled efficient interfaces for quantum memories and is predicted to be a critical component of quantum networks. However, scalable network architectures require spatial, temporal, and spectral control of photons, which relies on nonlinear and electro-optic functionalities that diamond alone cannot provide. Here, we demonstrate heterogeneous integration of a thin-film lithium niobate (TFLN) platform, which has strong chi-2 nonlinearity and electro-optic effects, with thin diamond films. We demonstrate high-Q diamond photonic crystal cavities (Q factors exceeding 5x10^4 at 735 nm) that are lithographically aligned with TFLN photonic backbone and critically coupled to it. This allows us to realize low-loss diamond-TFLN "escalators" (loss ~1 dB/coupler) that support efficient light transfer between them. At cryogenic temperatures (5K), we can collect photons emitted from silicon vacancies (SiVs) embedded within the diamond structure via the TFLN photonic circuit. This approach establishes a scalable route toward integrated photonic circuits for practical quantum networking and other technologies.

physics.optics

Heterogeneous Transfer of Thin Film BaTiO$_3$ onto Silicon for Device Fabrication

Thin film BaTiO$_3$ has one of the highest known Pockels coefficients (>1200 pm/V), making it an attractive material for use in electro-optic devices. It is advantageous to integrate BaTiO$_3$ on silicon to enable complementary metal-oxide-semiconductor (CMOS) compatible processing. However, synthesis of high-quality BaTiO$_3$ directly on silicon remains a challenge. Here, we synthesize BaTiO$_3$ using hybrid metal-organic molecular beam epitaxy (hMBE) and demonstrate its transfer onto silicon using thermocompression bonding and chemical lift-off. Hybrid metal-organic MBE enables self-regulated synthesis of highly stoichiometric thin films at high growth rates (>100nm/hr). Our transfer method results in millimeter-scale areas of atomically flat, crack-free BaTiO$_3$ making it a potentially scalable method. Finally, we demonstrate the applicability of our process to device fabrication through characterization of lithographically-patterned and etch-transferred sub-micron features.

cond-mat.mtrl-sci

A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices

4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into suspended nanodevices enhances defect control and readout--key advances needed to fully harness their potential. However, challenges in developing robust fabrication processes for 4H-SiC thin films--due to the material's chemical and mechanical stability--limit their implementation in quantum applications. Here, we report on a new fabrication approach that first synthesizes suspended thin films from a monolithic platform, then patterns devices. With this technique, we fabricate and characterize structures tailored for defect integration, demonstrating 1D photonic crystal cavities, with and without waveguide interfaces, and lithium niobate on 4H-SiC acoustic cavities. This approach allows for greater fabrication flexibility--supporting high temperature annealing and heterogeneous material platform compatibility--providing a versatile platform for scalable fabrication of 4H-SiC devices for quantum technologies.

physics.app-ph

Universal dynamics and microwave control of programmable cavity electro-optic frequency combs

Electro-optic (EO) frequency combs are foundational for metrology and spectroscopy. Specifically, microresonator-based cavity EO combs are distinguished by efficient sideband generation, precisely controlled by microwave signals, enabling high-performance integrated frequency references and pulse sources. However, the apparent simplicity of these devices, often described by the EO modulation-induced coupling of nearest-neighbor cavity modes, has limited investigations of their fundamental physics, thereby restricting their full potential. Here, we uncover the universal dynamics and complete frequency lattice connectivity underpinning cavity EO microcombs, as well as characterize the full space of nonlinear optical states, controlled by modulation depth and optical detuning, using the thin-film lithium niobate photonic platform. Leveraging this understanding, we design complex long-range couplings between cavity modes to realize programmable spectro-temporal shaping of the generated combs and pulses. We achieve three technological advances, including repetition-rate flexibility, substantial comb bandwidth extension beyond traditional scaling laws, and resonantly-enhanced flat-top spectrum. Our results provide physical insights for synchronously driven cavity-based EO systems, broadly defined, paving the way for electrically controlled and electrically enhanced comb generators for next-generation photonic applications.

physics.optics

High-efficiency and broadband coherent optical comb generation in integrated X-cut lithium niobate microresonators

The ability to generate efficient and coherent frequency combs using photonic integrated circuits offers tremendous potential for a range of applications. In particular, "microcombs" based on chip-integrated resonators are poised to revolutionize optical communication, computation, and sensing systems, especially when paired with fast electro-optic (EO) devices. X-cut thin-film lithium niobate (TFLN) is a promising platform for developing the next-generation of microcomb-driven integrated photonic systems, providing a diversity of functionalities through combined $\chi^{(3)}$ and EO nonlinearities. In this context, normal-dispersion Kerr microcombs are critically needed because of their standout advantages, yet this dispersion regime remains unexplored for comb generation on X-cut TFLN. Here, we leverage ultralow-loss photonic waveguides, as well as strategic resonator designs that allow us to tailor Raman effects and engineer desired spatial mode interactions, for the robust generation of normal-dispersion Kerr microcombs. Specifically, we show microcombs that substantially surpass state-of-the-art bright cavity soliton and EO microcombs on X-cut TFLN in key performance metrics. Additionally, we demonstrate a novel microcomb whose existence is underpinned by both normal-dispersion Kerr dynamics and stimulated Raman scattering, in a single spatial mode of a microresonator. This microcomb manifests itself as two interleaved frequency combs centered about the pump and Stokes frequencies, resulting in extended spectral spans. Our work will unlock high-speed and low energy consumption photonic circuits for communications, frequency synthesis, and signal processing enabled by a monolithic microcomb technology, while also stimulating further investigations of new nonlinear states that may synergize the strong hybrid nonlinearities unique to X-cut TFLN.

physics.optics

Thin Film Lithium Niobate on Diamond (LiNDa) platform for Efficient Spin-Phonon Coupling

Negatively charged silicon vacancy (SiV) center in diamonds are leading candidates for solid-state quantum memories that can be controlled using electromagnetic or acoustic waves. The latter are particularly promising due to strong strain response of SiV, enabling large spin-phonon interaction strengths. Indeed, coherent spin control via surface acoustic waves (SAW) has been demonstrated and is essential for developing on-chip phononic quantum networks. However, the absence of piezoelectricity in diamond requires interfacing with a piezoelectric material for efficient transduction and delivery of acoustic waves to spins in diamonds. Here, we demonstrate a heterogeneously integrated phononic platform that combines thin-film lithium niobate (TFLN) with diamond to enable acoustic control of single SiV spins. Additionally, leveraging large SAW-induced strain at the location of SiV, we achieve coherent acoustic control of an electron spin with more than twofold improvement in Rabi frequency compared to the state-of-the-art devices based on aluminum nitride-on-diamond. This work represents a crucial step towards realizing phonon-based quantum information processing systems.

quant-ph

Robust Poling and Frequency Conversion on Thin-Film Periodically Poled Lithium Tantalate

We explore a robust fabrication process for periodically-poled thin-film lithium tantalate (PP-TFLT) by systematically varying fabrication parameters and confirming the quality of inverted domains with second-harmonic microscopy (SHM). We find a periodic poling recipe that can be applied to both acoustic-grade and optical-grade film, electrode material, and presence of an oxide interlayer. By using a single high-voltage electrical pulse with peak voltage time of 10 ms or less and a ramp-down time of 90 s, rectangular poling domains are established and stabilized in the PP-TFLT. We employ our robust periodic poling process in a controllable pole-after-etch approach to produce PP-TFLT ridge waveguides with normalized second harmonic generation (SHG) conversion efficiencies of 208 %W-1cm-2 from 1550 nm to 775 nm in line with the theoretical value of 244 %W-1cm-2. This work establishes a high-performance poling process and demonstrates telecommunications band SHG for thin-film lithium tantalate, expanding the capabilities of the platform for frequency mixing applications in quantum photonics, sensing, and spectroscopy.

physics.optics

Purcell-enhanced spin-phonon coupling with a single color center

The radiative properties of atoms are inherently linked to their surrounding environment. Placing an electromagnetic resonator around atoms can enhance spontaneous emission, as shown by Purcell in the 1940s. This approach is now routinely used in quantum computing and communication to channel photons emitted by atoms into well-defined modes and control atom-photon interactions. For solid-state artificial atoms, such as color-centers, the host lattice introduces an acoustic environment, allowing excited atoms to relax by emitting phonons. Here we observe the acoustic Purcell effect by constructing a specially engineered, microwave-frequency nanomechanical resonator around a color-center spin qubit in diamond. Using a co-localized optical mode of the structure that strongly couples to the color-center's excited state, we perform single-photon-level laser spectroscopy at milliKelvin temperatures and observe ten-fold faster spin relaxation when the spin qubit is tuned into resonance with a 12 GHz acoustic mode. Additionally, we use the color-center as an atomic-scale probe to measure the broadband phonon spectrum of the nanostructure up to a frequency of 28 GHz. Our work establishes a new regime of control for quantum defects in solids and paves the way for interconnects between atomic-scale quantum memories and qubits encoded in acoustic and superconducting devices.

quant-ph

Purcell-enhanced emissions from diamond color centers in slow light photonic crystal waveguides

Quantum memories based on emitters with optically addressable spins rely on efficient photonic interfaces, often implemented as nanophotonic cavities with ideally narrow spectral linewidths and small mode volumes. However, these approaches require nearly perfect spectral and spatial overlap between the cavity mode and quantum emitter, which can be challenging. This is especially true in the case of solid-state quantum emitters that are often randomly positioned and can suffer from significant inhomogeneous broadening. An alternative approach to mitigate these challenges is to use slow-light waveguides that can enhance light-matter interaction across large optical bandwidths and large areas. Here, we demonstrate diamond slow light photonic crystal (PhC) waveguides that enable broadband optical coupling to embedded silicon-vacancy (SiV) color centers. We take advantage of the recently demonstrated thin-film diamond photonic platform to fabricate fully suspended two-dimensional PhC waveguides. Using this approach, we demonstrate waveguide modes with high group indices up to 70 and observe Purcell-enhanced emissions of the SiVs coupled to the waveguide mode. Our approach represents a practical diamond platform for robust spin-photon interfaces with color centers.

quant-ph

Stable gigahertz- and mmWave-repetition-rate soliton microcombs on X-cut lithium niobate

Soliton microcombs are a cornerstone of integrated frequency comb technologies, with applications spanning photonic computing, ranging, microwave synthesis, optical communications, and quantum light generation. In nearly all such applications, electro-optic (EO) components play a critical role in generating, monitoring, stabilizing, and modulating the solitons. Towards building photonic integrated circuits for next-generation applications, that will simultaneously maximize system performance and minimize size, weight, and power consumption metrics, achieving soliton microcombs and efficient EO modulation on a chip is essential. X-cut thin-film lithium niobate (TFLN) has emerged as a leading photonic platform for the realization of high-performance integrated EO devices and systems. However, despite extensive research, soliton microcombs have remained elusive to X-cut TFLN due to its multiple strong Raman-active modes, in-plane refractive index anisotropy, and photorefractive effects. Here, we address this long-standing challenge and demonstrate versatile soliton microcombs on X-cut TFLN, with repetition-rates spanning from the gigahertz (~26 GHz) up to the millimeter-wave (~0.156 THz) regime. The combs feature exceptional long-term stability, maintaining a direct injection-locked state for over 90 minutes (manually terminated), with repetition-rate phase noise closely tracking that of a high-quality electronic microwave synthesizer. Our finding broadly advances both the fundamental science and practical applications of integrated comb sources by enabling efficient EO modulation and broadband coherent solitons to be monolithically combined on the same chip.

physics.optics

Universal distributed blind quantum computing with solid-state qubits

Blind quantum computing (BQC) is a promising application of distributed quantum systems, where a client can perform computations on a remote server without revealing any details of the applied circuit. While the most promising realizations of quantum computers are based on various matter qubit platforms, implementing BQC on matter qubits remains an outstanding challenge. Using silicon-vacancy (SiV) centers in nanophotonic diamond cavities with an efficient optical interface, we experimentally demonstrate a universal quantum gate set consisting of single- and two-qubit blind gates over a distributed two-node network. Using these ingredients, we perform a distributed algorithm with blind operations across our two-node network, paving the way towards blind quantum computation with matter qubits in distributed, modular architectures.

quant-ph

Integrated lithium niobate photonic computing circuit based on efficient and high-speed electro-optic conversion

Here we show a photonic computing accelerator utilizing a system-level thin-film lithium niobate circuit which overcomes this limitation. Leveraging the strong electro-optic (Pockels) effect and the scalability of this platform, we demonstrate photonic computation at speeds up to 1.36 TOPS while consuming 0.057 pJ/OP. Our system features more than 100 thin-film lithium niobate high-performance components working synergistically, surpassing state-of-the-art systems on this platform. We further demonstrate binary-classification, handwritten-digit classification, and image classification with remarkable accuracy, showcasing our system's capability of executing real algorithms. Finally, we investigate the opportunities offered by combining our system with a hybrid-integrated distributed feedback laser source and a heterogeneous-integrated modified uni-traveling carrier photodiode. Our results illustrate the promise of thin-film lithium niobate as a computational platform, addressing current bottlenecks in both electronic and photonic computation. Its unique properties of high-performance electro-optic weight encoding and conversion, wafer-scale scalability, and compatibility with integrated lasers and detectors, position thin-film lithium niobate photonics as a valuable complement to silicon photonics, with extensions to applications in ultrafast and power-efficient signal processing and ranging.

physics.optics

A Thin Film Lithium Niobate Near-Infrared Platform for Multiplexing Quantum Nodes

Practical quantum networks will require quantum nodes consisting of many memory qubits. This in turn will increase the complexity of the photonic circuits needed to control each qubit and will require strategies to multiplex memories and overcome the inhomogeneous distribution of their transition frequencies. Integrated photonics operating at visible to near-infrared (VNIR) wavelength range, compatible with the transition frequencies of leading quantum memory systems, can provide solutions to these needs. In this work, we realize a VNIR thin-film lithium niobate (TFLN) integrated photonics platform with the key components to meet these requirements. These include low-loss couplers ($<$ 1 dB/facet), switches ($>$ 20 dB extinction), and high-bandwidth electro-optic modulators ($>$ 50 GHz). With these devices we demonstrate high-efficiency and CW-compatible frequency shifting ($>$ 50 $\%$ efficiency at 15 GHz), as well as simultaneous laser amplitude and frequency control through a nested modulator structure. Finally, we highlight an architecture for multiplexing quantum memories using the demonstrated TFLN components, and outline how this platform can enable a 2-order of magnitude improvement in entanglement rates over single memory nodes. Our results demonstrate that TFLN can meet the necessary performance and scalability benchmarks to enable large-scale quantum nodes.

physics.optics

Integrated electro-optics on thin-film lithium niobate

Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in particular enable essential electronic high-speed control for photonics while offering substantial photonic parallelism for electronics. Recent strides in thin-film lithium niobate photonics have ushered revolutionary advancements in electro-optics. This technology not only offers the requisite strong electro-optic coupling but also boasts ultra-low optical loss and high microwave bandwidth. Further, its tight confinement and compatibility with nanofabrication allow for unprecedented reconfigurability and scalability, facilitating the creation of novel and intricate devices and systems that were once deemed nearly impossible in bulk systems. Building upon this platform, the field has witnessed the emergence of various groundbreaking electro-optic devices surpassing the current state of the art, and introducing functionalities that were previously non-existent. This technological leap forward provides a unique framework to explore various realms of physics as well, including photonic non-Hermitian synthetic dimensions, active topological physics, and quantum electro-optics. In this review, we present the fundamental principles of electro-optics, drawing connections between fundamental science and the forefront of technology. We discuss the accomplishments and future prospects of integrated electro-optics, enabled by thin-film lithium niobate platform.

physics.optics

Octave-spanning Kerr soliton frequency combs in dispersion- and dissipation-engineered lithium niobate microresonators

Dissipative Kerr solitons from optical microresonators, commonly referred to as soliton microcombs, have been developed for a broad range of applications, including precision measurement, optical frequency synthesis, and ultra-stable microwave and millimeter wave generation, all on a chip. An important goal for microcombs is self referencing, which requires octave-spanning bandwidths to detect and stabilize the comb carrier envelope offset frequency. Further, detection and locking of the comb spacings are often achieved using frequency division by electro-optic modulation. The thin-film lithium niobate photonic platform, with its low loss, strong second- and third-order nonlinearity, as well as large Pockels effect, is ideally suited for these tasks. However, octave-spanning soliton microcombs are challenging to demonstrate on this platform, largely complicated by strong Raman effects hindering reliable fabrication of soliton devices. Here, we demonstrate entirely connected and octave-spanning soliton microcombs on thin-film lithium niobate. With appropriate control over microresonator free spectral range and dissipation spectrum, we show that soliton-inhibiting Raman effects are suppressed, and soliton devices are fabricated with near-unity yield. Our work offers an unambiguous method for soliton generation on strongly Raman-active materials. Further, it anticipates monolithically integrated, self-referenced frequency standards in conjunction with established technologies, such as periodically poled waveguides and electro-optic modulators, on thin-film lithium niobate.

physics.optics

Twenty-nine million Intrinsic Q-factor Monolithic Microresonators on Thin Film Lithium Niobate

The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microresonators with a record-high intrinsic quality (Q) factor of twenty-nine million, corresponding to an ultra-low propagation loss of 1.3 dB/m. We present spectral analysis and the statistical distribution of Q factors across different resonator geometries. Our work pushes the fabrication limits of TFLN photonics to achieve a Q factor within one order of magnitude of the material limit.

physics.optics