Markus Ball | Searcharxiv

arXiv2026

GEM Production at the FTD in Bonn

This manuscript describes the establishment of a local production line for 10 cm x 10 cm Gas Electron Multiplier (GEM) foils at the Forschungs- und Technologiezentrum Detektorphysik (FTD) at the university of Bonn. GEM foils are widely used in modern gaseous detectors, providing high-gain signal amplification and high-rate capability. Our fabrication process utilizes a double-mask photolithographic technique on 50 $\mu$m polyimide cladded on both sides with 5 $\mu$m copper. The chemical etching procedure that is required to achieve uniform hole geometries with outer hole diameters of 70 $\mu$m and inner hole diameters of 50 $\mu$m will be described. Quality control protocols, including semi-automated optical inspection and high-voltage leakage current tests, demonstrate that foils produced at our facility achieve uniform hole size distributions and leakage currents of less than 1 nA at 600 V in air with no discharge hotspots. These results confirm that the production chain is capable of delivering high-performance foils suitable for research and development purposes.

physics.ins-det↗

arXiv2019

Measurements of the Charging-Up Effect in Gas Electron Multipliers

GEM are widely used as amplification stages in gaseous detectors exposed to high rates. The GEM consists of a polyimide foil which is coated by two thin copper layers. Charges collected into the holes or created during the amplification process may adhere to the polyimide part inside the holes. This is often accompanied by a change of the effective gain. The effect is commonly known as the charging-up effect. This work presents a systematic investigation of the effect under well-controlled and monitored conditions for a single standard GEM foil in Ar/CO$_2$ (90/10) gas for varying rates of X-ray interactions in the detector and for different gains of the foil. In order to cover a wide range of different rates, we apply two different methods. The first one is based on a current measurement while the second one relies on the analysis of $^{55}$Fe spectra over time. Both methods give consistent results, showing an initial increase of the effective gain with time and an asymptotic saturation, which can be well described by a single-exponential function. We find that the characteristic time constants extracted from our measurements scale inversely proportional to the rate of incoming electrons for a given GEM voltage. Introducing characteristic quantities, which describe either the number of incoming electrons per hole or the total number of electrons in a hole per characteristic time, we find consistent numbers for measurements taken at the same GEM voltages. For measurements taken at different GEM voltages, however, also the characteristic total number of electrons inside the hole, which is supposed to take into account the different effective gains, is found to be higher by a factor of about 3.5 for $U_{\rm GEM}=$ 350V ($n_{\rm tot}=8.8\times 10^8$) compared to 400V ($n_{\rm tot}=2.4\times 10^8$). This hints at a residual dependence of the charging-up characteristics on the GEM voltage.

physics.ins-det↗