arXiv subjects

Markus Koenig

Publications and source records attributed to Markus Koenig.

5 recordsLinked to original sources

arXiv2024

Tailoring the energy landscape of a Bloch point singularity with curvature

Topological defects, or singularities, play a key role in the statics and dynamics of complex systems. In magnetism, Bloch point singularities represent point defects that mediate the nucleation of textures such as skyrmions and hopfions. However, while the textures are typically stabilised in chiral magnets, the influence of chirality on the Bloch point singularities remains relatively unexplored. Here we harness advanced three-dimensional nanofabrication to explore the influence of chirality on Bloch point singularities by introducing curvature-induced symmetry breaking in a ferromagnetic nanowire. Combining X-ray magnetic microscopy with the application of in situ magnetic fields, we demonstrate that Bloch point singularity-containing domain walls are stabilised in straight regions of the sample, and determine that curvature can be used to tune the energy landscape of the Bloch points. Not only are we able to pattern pinning points but, by controlling the gradient of curvature, we define asymmetric potential wells to realise a robust Bloch point shift-register with non-reciprocal behaviour. These insights into the influence of symmetry and chirality on singularities offers a route to the controlled nucleation and propagation of topological textures, providing opportunities for logic and computing devices.

cond-mat.mes-hall↗

arXiv2021

Directional ballistic transport in the two-dimensional metal PdCoO2

In an idealized infinite crystal, the material properties are constrained by the symmetries of its unit cell. Naturally, the point-group symmetry is broken by the sample shape of any finite crystal, yet this is commonly unobservable in macroscopic metals. To sense the shape-induced symmetry lowering in such metals, long-lived bulk states originating from anisotropic Fermi surfaces are needed. Here we show how strongly facetted Fermi surfaces and long quasiparticle mean free paths present in microstructures of PdCoO2 yield an in-plane resistivity anisotropy that is forbidden by symmetry on an infinite hexagonal lattice. Bar shaped transport devices narrower than the mean free path are carved from single crystals using focused ion beam (FIB) milling, such that the ballistic charge carriers at low temperatures frequently collide with both sidewalls defining a channel. Two symmetry-forbidden transport signatures appear: the in-plane resistivity anisotropy exceeds a factor of 2, and transverse voltages appear in zero magnetic field. We robustly identify the channel direction as the source of symmetry breaking via ballistic Monte- Carlo simulations and numerical solution of the Boltzmann equation.

cond-mat.mes-hall↗

arXiv2018

Spatially modulated heavy-fermion superconductivity in CeIrIn5

The ability to spatially modulate the electronic properties of solids has led to landmark discoveries in condensed matter physics as well as new electronic applications. Although crystals of strongly correlated metals exhibit a diverse set of electronic ground states, few approaches to spatially modulating their properties exist. Here we demonstrate spatial control over the superconducting state in mesoscale samples of the canonical heavy-fermion superconductor CeIrIn5. We use a focused ion beam (FIB) to pattern crystals on the microscale, which tailors the strain induced by differential thermal contraction into specific areas of the device. The resulting non-uniform strain fields induce complex patterns of superconductivity due to the strong dependence of the transition temperature on the strength and direction of strain. Electrical transport and magnetic imaging of devices with different geometry show that the obtained spatial modulation of superconductivity agrees with predictions based on finite element simulations. These results present a generic approach to manipulating electronic order on micrometer length scales in strongly correlated matter.

cond-mat.supr-con↗

arXiv2008

The Quantum Spin Hall Effect: Theory and Experiment

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in the bulk, but have topologically protected edge states due to the time reversal symmetry. In two dimensions the helical edge states give rise to the quantum spin Hall (QSH) effect, in the absence of any external magnetic field. Here we review a recent theory which predicts that the QSH state can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the band structure changes from a normal to an "inverted" type at a critical thickness $d_c$. We present an analytical solution of the helical edge states and explicitly demonstrate their topological stability. We also review the recent experimental observation of the QSH state in HgTe/(Hg,Cd)Te quantum wells. We review both the fabrication of the sample and the experimental setup. For thin quantum wells with well width $d_{QW}< 6.3$ nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells ($d_{QW}> 6.3$ nm), the nominally insulating regime shows a plateau of residual conductance close to $2e^2/h$. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, $d_c= 6.3$ nm, is also independently determined from the occurrence of a magnetic field induced insulator to metal transition.

cond-mat.mes-hall↗

arXiv2007

Quantum Spin Hall Insulator State in HgTe Quantum Wells

Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e^2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nm, is also independently determined from the magnetic field induced insulator to metal transition. These observations provide experimental evidence of the quantum spin Hall effect.

cond-mat.mes-hall↗