arXiv subjects

Markus Morgenstern

Publications and source records attributed to Markus Morgenstern.

At least 19 recordsLinked to original sources

arXiv2026

Evidence for Many-Body States in NiPS$_3$ Revealed by Angle-Resolved Photoelectron Spectroscopy

We present $\mu$-ARPES spectra of the Mott-insulating van der Waals antiferromagnet NiPS$_3$. Signatures of strong correlations -- such as the onset of atomic or atomic-ligand multiplets and spin-orbit-entangled exciton have been observed in this material by various two-particle spectroscopies, but not previously in photoemission. Our measurements reveal a weakly dispersive feature at the valence-band edge that is absent in DFT+$U$ calculations and remains unchanged across the N\'eel transition. After critically examining and ruling out alternative interpretations, we show that an exact diagonalization of a NiS$_6$ cluster yields low-energy final-state configurations of mixed multiplet $d^7$ and $d^8\underline{L}$ character, whose energy differences are consistent with the observed additional feature. This implies that ARPES directly accesses local Ni-S multiplet physics in NiPS$_3$, revealing a many-body structure beyond mean-field theory. Our results confirm that NiPS$_3$ is an excellent model platform in which strong correlations, reduced dimensionality, and covalent metal-ligand bonding jointly shape both two- and single-particle spectroscopies, underscoring the need for a genuinely quantum many-body description of two-dimensional quantum materials.

cond-mat.str-el↗

arXiv2025

Probing the band structure of the strongly correlated antiferromagnet NiPS3 across its phase transition

NiPS3 is an exfoliable van-der-Waals intralayer antiferromagnet with zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related, fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with {\mu}m resolution in combination with DFT+U calculations for that purpose. We identify a characteristic band shift across TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT+U approximations in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

cond-mat.str-el↗

arXiv2024

Identifying band structure changes of FePS3 across the antiferromagnetic phase transition

Magnetic 2D materials enable novel tuning options of magnetism. As an example, the van der Waals material FePS3, a zigzag-type intralayer antiferromagnet, exhibits very strong magnetoelastic coupling due to the different bond lengths along different ferromagnetic and antiferromagnetic coupling directions enabling elastic tuning of magnetic properties. The likely cause of the length change is the intricate competition between direct exchange of the Fe atoms and superexchange via the S and P atoms. To elucidate this interplay, we study the band structure of exfoliated FePS3 by mu m scale ARPES (Angular Resolved Photoelectron Spectroscopy), both, above and, for the first time, below the Neel temperature TN. We find three characteristic changes across TN. They involve S 3p-type bands, Fe 3d-type bands and P 3p-type bands, respectively, as attributed by comparison with density functional theory calculations (DFT+U). This highlights the involvement of all the atoms in the magnetic phase transition providing independent evidence for the intricate exchange paths.

cond-mat.mtrl-sci↗

arXiv2024

An Ultra-High Vacuum Scanning Tunneling Microscope with Pulse Tube and Joule-Thomson cooling operating at sub-pm z-noise

We describe a compact ultra-high vacuum (UHV) scanning tunneling microscope (STM) system that does not need any external supply of cooling liquids. It achieves temperatures down to 1.5 K and a z-noise down to 300 fmRMS for the frequency range of 0.1 Hz - 5 kHz (feedback loop off). It employs a pulse tube cryocooler (PTC) and a Joule-Thomson (JT) stage inducing only small temperature oscillations at the STM with amplitude below 1 mK. The challenge to combine an effective vibrational decoupling from the PTC with sufficient thermal conduction is tackled by a multipartite approach. We realize a minimal stiffness of the UHV bellows that connect the PTC and the STM chamber. Fine Copper wires mechanically decouple the PTC stages from cooling plates that carry the thermal shields, the JT stage and the STM. Soft springs decouple the STM from the JT stage. Finally, the STM body has an optimized conical shape and is made of the light and stiff material Shapal Hi MSoft such that a strong reduction of low frequency vibrations results for the tunnel junction. The voltage noise in the tunnel junction is 0.12 mV and an RF antenna close to the tunnel junction provides radio frequency excitations up to 40 GHz with amplitudes up to 10 mV.

physics.ins-det↗

arXiv2023

Electronic band structure changes across the antiferromagnetic phase transition of exfoliated MnPS$_3$ probed by $μ$-ARPES

Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the Néel temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements.

cond-mat.mtrl-sci↗

arXiv2022

Probing the magnetic band gap of the ferromagnetic topological insulator MnSb$_2$Te$_4$

Mn-rich MnSb$_2$Te$_4$ is a ferromagnetic topological insulator with yet the highest Curie temperature T_C = 45-50 K. It exhibits a magnetic gap at the Dirac point of the topological surface state that disappears above T_C. By scanning tunneling spectroscopy, we probe this gap at different magnetic fields and temperatures. We firstly reveal that the gap size shrinks, when an in-plane magnetic field of up to B = 3 T is applied, but does not close completely as the magnetization is only partially rotated in-plane. This corroborates the magnetic origin of the gap and the complex magnetic structure. In addition, we demonstrate significant spatiotemporal fluctuations of the gap size at temperatures as low as T_C/2, above which the remanent magnetization indeed decays. This temperature is close to the antiferromagnetic transition temperature observed for bulk-type single crystals of MnSb$_2$Te$_4$, highlighting the important role of competing magnetic orders in the formation of the favorable ferromagnetic topological insulator. Our study, thus, provides crucial insights into the complex magnetic gap opening of topological insulators that is decisive for quantum anomalous Hall devices.

cond-mat.mes-hall↗

arXiv2022

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.

cond-mat.mes-hall↗

arXiv2020

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

cond-mat.mes-hall↗

arXiv2020

Mechanisms of skyrmion collapse revealed by sub-nm maps of the transition rate

Magnetic skyrmions are key candidates for novel memory, logic, and neuromorphic computing. An essential property is their topological protection caused by the whirling spin texture as described by a robust integer winding number. However, the realization on an atomic lattice leaves a loophole for switching the winding number via concerted rotation of individual spins. Hence, understanding the unwinding microscopically is key to enhance skyrmion stability. Here, we use spin polarized scanning tunneling microscopy to probe skyrmion annihilation by individual hot electrons and obtain maps of the transition rate on the nanometer scale. By applying an in-plane magnetic field, we tune the collapse rate by up to four orders of magnitude. In comparison with first-principles based atomistic spin simulations, the experiments demonstrate a radial symmetric collapse at zero in-plane magnetic field and a transition to the recently predicted chimera collapse at finite in-plane field. Our work opens the route to design criteria for skyrmion switches and improved skyrmion stability.

cond-mat.mes-hall↗

arXiv2020

Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods

We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.

cond-mat.mtrl-sci↗

arXiv2020

Probing the Pinning Strength of Magnetic Vortex Cores with sub-nm Resolution

Topological magnetic textures such as vortex cores or skyrmions are key candidates for non-volatile information processing. This exploits the texture movement by current pulses that is typically opposed by pinning. A detailed understanding of pinning is hence crucial with previous experiments being either limited in terms of controlled magnetic texture positioning or in terms of spatial resolution. Here, we use spin-polarized scanning tunneling microscopy to track a magnetic vortex core that is deliberately moved by a 3D magnetic field. The core covering about 10.000 Fe-atoms gets pinned by defects that are only a few nm apart. Reproducing the vortex path via parameter fit, we deduce the pinning potential of the defects as a mexican hat with short-range repulsive and long-range attractive part. By comparison with micromagnetic simulations, the attractive part is attributed to a local suppression of exchange interaction. The novel approach to deduce defect induced pinning potentials on the sub-nm scale is transferable to other non-collinear spin textures eventually enabling an atomic scale design of defect configurations, e.g., for reliable read-out in race-track type devices.

cond-mat.mes-hall↗

arXiv2018

One-dimensional Si chains embedded in Pt(111)and protected by a hexagonal boron-nitride monolayer

Using scanning tunneling microscopy, we show that Si deposition on Pt(111) at 300K leads to a network of one-dimensional Si chains. On the bare Pt(111) surface, the chains, embedded into the Pt surface, are orientated along the <112>-direction. They disappear within a few hours in ultrahigh vacuum due to the presence of residual gas. Exposing the chains to different gases deliberately reveals that CO is largely responsible for the disappearance of the chains. The chains can be stabilized by a monolayer of hexagonal boron nitride, which is deposited prior to the Si deposition. The resulting Si chains are rotated by 30° with respect to the chains on the bare Pt(111) surface and survive even an exposure to air for 10 minutes.

cond-mat.mes-hall↗

arXiv2018

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.

cond-mat.mes-hall↗

arXiv2018

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.

cond-mat.mtrl-sci↗

arXiv2018

An ultrahigh-vacuum cryostat for simultaneous scanning tunneling microscopy and magneto-transport measurements down to 400mK

We present the design and calibration measurements of a scanning tunneling microscope setup in a 3He ultrahigh-vacuum cryostat operating at 400 mK with a hold time of 10 days. With 2.70 m in height and 4.70 m free space needed for assembly, the cryostat fits in a one-story lab building. The microscope features optical access, an xy table, in situ tip and sample exchange, and enough contacts to facilitate atomic force microscopy in tuning fork operation and simultaneous magneto-transport measurements on the sample. Hence, it enables scanning tunneling spectroscopy on microstructured samples which are tuned into preselected transport regimes. A superconducting magnet provides a perpendicular field of up to 14 T. The vertical noise of the scanning tunneling microscope amounts to 1 pmrms within a 700 Hz bandwidth. Tunneling spectroscopy using one superconducting electrode revealed an energy resolution of 120 mueV. Data on tip-sample Josephson contacts yield an even smaller feature size of 60 mueV, implying that the system operates close to the physical noise limit.

physics.ins-det↗

arXiv2018

Mask aligner for ultrahigh vacuum with capacitive distance control

We present a mask aligner driven by three piezo motors which guides and aligns a SiN shadow mask under capacitive control towards a sample surface. The three capacitors for read out are located at the backside of the thin mask such that the mask can be placed in $μ$m distance from the sample surface, while keeping it parallel to the surface. Samples and masks can be exchanged in-situ and the mask can additionally be displaced parallel to the surface. We demonstrate an edge sharpness of the deposited structures below 100 nm, which is likely limited by the diffusion of the deposited Au on Si(111).

physics.app-ph↗

arXiv2017

Tuning the pseudospin polarization of graphene by a pseudo-magnetic field

One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable as a redistribution of the local density of states. This can be interpreted as a polarization of graphene's pseudospin due to a strain induced pseudo-magnetic field, in analogy to the alignment of a real spin in a magnetic field. We reveal this sublattice symmetry breaking by tunably straining graphene using the tip of a scanning tunneling microscope. The tip locally lifts the graphene membrane from a SiO$_2$ support, as visible by an increased slope of the $I(z)$ curves. The amount of lifting is consistent with molecular dynamics calculations, which reveal a deformed graphene area under the tip in the shape of a Gaussian. The pseudo-magnetic field induced by the deformation becomes visible as a sublattice symmetry breaking which scales with the lifting height of the strained deformation and therefore with the pseudo-magnetic field strength. Its magnitude is quantitatively reproduced by analytic and tight-binding models, revealing fields of 1000 T. These results might be the starting point for an effective THz valley filter, as a basic element of valleytronics.

cond-mat.mes-hall↗

arXiv2016

Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings

The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states towards the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques.

cond-mat.mes-hall↗