arXiv subjects

Martin Dressel

Publications and source records attributed to Martin Dressel.

119 records · Page 7Linked to original sources

arXiv2009

Bandwidth-controlled Mott transition in kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x}: Optical studies of correlated carriers

In the two-dimensional organic charge-transfer salts kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x} a systematic variation of the Br content from x = 0 to 0.9 allows us to tune the Mott transition by increasing the bandwidth. At temperatures below 50 K, an energy gap develops in the Cl-rich samples and grows to approximately 1000 cm-1 for T -> 0. With increasing Br concentration spectral weight shifts into the gap region and eventually fills it up completely. As the samples with x = 0.73, 0.85 and 0.9 become metallic at low temperatures, a Drude-like response develops due to the coherent quasiparticles. Here, the quasiparticle scattering rate shows a omega^2 dependence and the effective mass of the carriers is enhanced in agreement with the predictions for a Fermi liquid. These typical signatures of strong electron-electron interactions are more pronounced for compositions close to the critical value x_c \approx 0.7 where the metal-to-insulator transition occurs.

cond-mat.str-el↗

arXiv2008

Temperature and frequency dependent optical properties of ultra-thin Au films

While the optical properties of thin metal films are well understood in the visible and near-infrared range, little has been done in the mid- and far-infrared region. Here we investigate ultra-thin gold films prepared on Si(111)(7 x 7) in UHV by measuring in the frequency range between 500 cm-1 and 7000 cm-1 and for temperatures between 300 K and 5 K. The nominal thickness of the gold layers ranges between one monolayer and 9 nm. The frequency and temperature dependences of the thicker films can be well described by the Drude model of a metal, when taking into account classical size effects due to surface scattering. The films below the percolation threshold exhibit a non-metallic behavior: the reflection increases with frequency and decreases with temperature. The frequency dependence can partly be described by a generalized Drude model. The temperature dependence does not follow a simple activation process. For monolayers we observe a transition between surface states around 1100 cm-1.

cond-mat.mtrl-sci↗

arXiv2008

Quasi-Particle Dynamics in Superconducting Aluminum

The response of superconducting aluminum to electromagnetic radiation is investigated in a broad frequency (45 MHz to 40 GHz) and temperature range ($T>T_c/2$), by measuring the complex conductivity. While the imaginary part probes the superfluid density (Cooper-pairs), the real part monitors the opening of the superconducting energy gap and -- most important here -- the zero-frequency quasi-particle response. Varying the mean free path gives some insight into the dynamics, scattering and coherence effects of the quasi-particles in the superconducting state.

cond-mat.supr-con↗

arXiv2008

Influence of electronic correlations on the frequency-dependent hopping transport in Si:P

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate to interpret the electric conductivity spectra. With a newly developed technique we have measured the complex broadband microwave conductivity of Si:P from 100 MHz to 5 GHz in a broad range of phosphorus concentration $n/n_c$ from 0.56 to 0.95 relative to the critical value $n_c=3.5\times 10^{18}$ cm$^{-3}$ corresponding to the metal-insulator transition driven by doping. At our base temperature of $T =1.1$ K the samples are in the zero-phonon regime where they show a super-linear frequency dependence of the conductivity indicating the influence of the Coulomb gap in the density of the impurity states. At higher doping $n\to n_c$, an abrupt drop in the conductivity power law $\sig(ω)\simω^α$ is observed. The dielectric function $\eps$ increases upon doping following a power law in ($1-n/n_c$). Dynamic response at elevated temperatures has also been investigated.

cond-mat.dis-nn↗

arXiv2008

Analysis of broadband microwave conductivity and permittivity measurements of semiconducting materials

We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity, here we present a closed calibration and evaluation procedure for frequencies up to 5 GHz, based on the rigorous solution for the electromagnetic field distribution inside the sample combined with the variational principle; basically no limiting assumptions are necessary. A simple static model based on the electric current distribution proves to yield the same frequency dependence of the complex conductivity up to 1 GHz. After a critical discussion we apply the developed method to the hopping transport in Si:P at temperature down to 1 K.

cond-mat.mtrl-sci↗

arXiv2007

Ordering phenomena in quasi one-dimensional organic conductors

Low-dimensional organic conductors could establish themselves as model systems for the investigation of the physics in reduced dimensions. In the metallic state of a one-dimensional solid, Fermi-liquid theory breaks down and spin and charge degrees of freedom become separated. But the metallic phase is not stable in one dimension: as the temperature is reduced, the electronic charge and spin tend to arrange themselves in an ordered fashion due to strong correlations. The competition of the different interactions is responsible for which broken-symmetry ground state is eventually realized in a specific compound and which drives the system towards an insulating state. Here we review the various ordering phenomena and how they can be identified by optic and magnetic measurements. While the final results might look very similar in the case of a charge density wave and a charge-ordered metal, for instance, the physical cause is completely different. When density waves form, a gap opens in the density of states at the Fermi energy due to nesting of the one-dimension Fermi surface sheets. When a one-dimensional metal becomes a charge-ordered Mott insulator, on the other hand, the short-range Coulomb repulsion localizes the charge on the lattice sites and even causes certain charge patterns. We try to point out the similarities and conceptional differences of these phenomena and give an example for each of them. Particular emphasis will be put on collective phenomena which are inherently present as soon as ordering breaks the symmetry of the system.

cond-mat.str-el↗

arXiv2007

Charge-Ordering Phenomena in One-Dimensional Solids

As the dimensionality is reduced, the world becomes more and more interesting; novel and fascinating phenomena show up which call for understanding. Physics in one dimension is a fascinating topic for theory and experiment: for the former often a simplification, for the latter always a challenge. Various ways will be demonstrated how one-dimensional structures can be achieved in reality. In particular organic conductors could establish themselves as model systems for the investigation of the physics in reduced dimensions. In the metallic state of a one-dimensional solid, Fermi-liquid theory breaks down and spin and charge degrees of freedom become separated. But the metallic phase is not stable in one dimension: as the temperature is reduced, the electronic charge and spin tend to arrange themselves in an ordered fashion due to strong correlations. The competition of the different interactions is responsible for which broken-symmetry ground state is eventually realized in a specific compound and which drives the system towards an insulating state. Here we review the various ordering phenomena and how they can be identified by dielectric and optic measurements.

cond-mat.str-el↗

arXiv2007

Bandwidth-controlled Mott transition in $κ-(BEDT-TTF)_2 Cu [N(CN)_2] Br_x Cl_{1-x}$ I. Optical studies of localized charge excitations

Infrared reflection measurements of the half-filled two-dimensional organic conductors $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_{2}$]Br$_{x}$Cl$_{1-x}$ were performed as a function of temperature ($5 {\rm K}<T<300$ K) and Br-substitution ($x=0%$, 40%, 73%, 85%, and 90%) in order to study the metal-insulator transition. We can distinguish absorption processes due to itinerant and localized charge carriers. The broad mid-infrared absorption has two contributions: transitions between the two Hubbard bands and intradimer excitations from the charges localized on the (BEDT-TTF)$_2$ dimer. Since the latter couple to intramolecular vibrations of BEDT-TTF, the analysis of both electronic and vibrational features provides a tool to disentangle these contributions and to follow their temperature and electronic-correlations dependence. Calculations based on the cluster model support our interpretation.

cond-mat.str-el↗

arXiv2007

Signature of Electronic Correlations in the Optical Conductivity of the Doped Semiconductor Si:P

Electronic transport in highly doped but still insulating silicon at low temperatures is dominated by hopping between localized states; it serves as a model system of a disordered solid for which the electronic interaction can be investigated. We have studied the frequency-dependent conductivity of phosphorus-doped silicon in the THz frequency range (30 GHz to 3 THz) at low temperatures $T\geq 1.8$ K. The crossover in the optical conductivity from a linear to a quadratic frequency dependence as predicted by Efros and Shklovskii is observed qualitatively; however, the simple model does not lead to a quantitative agreement. Covering a large range of donor concentration, our temperature- and frequency-dependent investigations reveal that electronic correlation effects between the localized states play an important and complex role at low temperatures. In particular we find a super-linear frequency dependence of the conductivity that highlights the influence of the density of states, i.e. the Coulomb gap, on the optical conductivity. When approaching the metal-to-insulator transition by increasing doping concentration, the dielectric constant and the localization length exhibit critical behavior.

cond-mat.str-el↗

arXiv2005

Conduction anisotropy and Hall effect in the organic conductor (TMTTF)2AsF6: evidence for Luttinger liquid and charge ordering

We present the high-temperature (70 K < T < 300 K) resistivity anisotropy and Hall effect measurements of the quasi-one-dimensional (1D) organic conductor (TMTTF)2AsF6. The temperature variations of the resistivity are pronouncedly different for the three different directions, with metallic-like at high temperatures for the a-axis only. Above 220 K the Hall coefficient R_H is constant, positive and strongly enhanced over the expected value; and the corresponding carrier concentration is almost 100 times lower than calculated for one hole/unit cell. Our results give evidence for the existence of a high-temperature regime above 200 K where the 1D Luttinger liquid features appear in the transport properties. Our measurements also give strong evidence of charge ordering in (TMTTF)2AsF6. At the charge-ordering transition T_{CO} \approx 100 K, R_H(T) abruptly changes its behavior, switches sign and rapidly increases with further temperature decrease.

cond-mat.str-el↗

arXiv2003

Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures

We investigated the transport properties of the quasi one-dimensional organic metal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T_{AO} \approx 180K). The pronounced conductivity anisotropy, a small and smoothly temperature dependent Hall effect, and a small, positive and temperature dependent magnetoresistance are analyzed within the existing Fermi-liquid and non-Fermi liquid models. We propose that the transport properties of quasi one-dimensional Bechgaard salts at high temperatures can be described within the Fermi liquid description.

cond-mat.str-el↗