arXiv subjects

Martin F. Sarott

Publications and source records attributed to Martin F. Sarott.

5 recordsLinked to original sources

arXiv2025

Polarity and anti-distortive polarons in WO3 through epitaxial shear strain

Bestowing CMOS-compatible binary oxides with additional functionalities is a powerful strategy toward the realization of oxide electronics. Ideal candidates are thin films which display a strong sensitivity to strain, chemical doping or nanoscale confinement. Among these, crystalline tungsten trioxide WO3 exhibits exceptional structural flexibility, enabling a wide range of functionalities. Here, we reveal the emergence of a previously unreported polar phase in epitaxial WO3 thin films. We accomplish this by imposing epitaxial shear strain, which stabilizes a low-symmetry triclinic structure that persists up to large film thicknesses and elevated temperatures. At the atomic scale, a change in the oxygen octahedral tilt pattern facilitates this symmetry lowering into a polar phase, which manifests as a periodic in-plane polarized stripe domain configuration with needle-like bifurcations at the microscale. The stripe domain walls further exhibit a strongly enhanced electrical conductivity in conjunction with a pronounced reduction of a distortive structural mode, providing the first experimental evidence for the formation of anti-distortive polarons recently predicted in WO3.

cond-mat.mtrl-sci↗

arXiv2025

Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon

Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these materials is, however, severely hampered on Si, where the large structural mismatch often results in an inferior interfacial quality and causes a degradation of the ferroelectric switching characteristics. In this work, we present the growth of single-crystalline BaTiO3 thin films on Si, exhibiting imprint-free switching, low coercivity, high remanent polarization, and no fatigue for over $10^{10}$ switching cycles. We accomplish this via the insertion of a SrSn1-xTixO3 layer on SrTiO3-buffered Si. This layer serves as a pseudo substrate that alleviates the thermal strain that the Si substrates imposes on the BaTiO3 layer, while simultaneously providing moderate compressive strain that stabilizes a pure out-of-plane polarization. Thus, our work paves the way toward the fabrication of Si-compatible, low-power-consuming ferroelectric devices for non-volatile memory applications.

cond-mat.mtrl-sci↗

arXiv2023

Improving the crystallinity and texture of oblique-angle-deposited AlN thin films using reactive synchronized HiPIMS

Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical vapor deposition (PVD), in contrast to conventional PVD, the film-forming species can be accelerated onto the growing film using substrate-bias potentials. This increas-es the ad-atom mobility, but also deflects the trajectory of ions towards the substrate increasing the texture of the growing film. However, potential gas-ion incorporation in the films limits the feasibility of such approaches for the deposition of defect-sensitive materials. In this work, we report on the oblique-angle deposition of highly c-axis oriented AlN (0002) films, enabled by reactive metal-ion syn-chronized HiPIMS. The effect of critical deposition parameters, such as the magnetic configuration, ion kinetic energies and substrate biasing are investigated. The films deposited using HiPIMS show a more pronounced texture and orientation compared to DCMS films. We find that combining the HiPIMS dep-ositions with a moderate substrate bias of -30 V is sufficient to improve the crystalline quality and tex-ture of the films significantly. To reduce process-gas incorporation, and the formation of point defects, the negative substrate-bias potential is synchronized to the Al-rich fraction of each HiPIMS pulse. This leads to reduced Ar-Ion incorporation and improves the structural properties. The films also show uni-form polarization of the grains making this synthesis route suitable for piezoelectric applications. While the compressive stress in the films is still high, the results demonstrate, that synchronized HiPIMS can yield promising results for the synthesis under oblique-angle deposition conditions - even with low substrate-bias potentials.

cond-mat.mtrl-sci↗

arXiv2023

Surface-Sensitive Raman Scattering by Transferable Nanoporous Plasmonic Membranes

Raman spectroscopy is a powerful technique to characterize materials. It probes non-destructively chemical composition, crystallinity, defects, strain and coupling phenomena. However, the Raman response of surfaces or thin films is often weak and obscured by dominant bulk signals. Here we overcome this limitation by placing a transferable porous gold membrane (PAuM) on top of the surface of interest. Slot-like nanopores in the membrane act as plasmonic slot antennas and enhance the Raman response of the surface or thin film underneath. Simultaneously, the PAuM suppresses the penetration of the excitation laser into the bulk, efficiently blocking the bulk Raman signal. Using graphene as a model surface, we show that these two simultaneous effects lead to an increase in the surface-to-bulk Raman signal ratio by three orders of magnitude. We find that 90% of the Raman enhancement occurs within the top 2.5 of the material, demonstrating truly surface-sensitive Raman scattering. To validate our approach, we analyze the surface of a LaNiO3 thin film. We observe a Raman mode splitting for the LaNiO3 surface-layer, which is spectroscopic evidence that the surface structure differs from the bulk. This result underpins that PAuM give direct access to Raman signatures of surfaces and their structural properties.

cond-mat.mtrl-sci↗

arXiv2022

Imaging ferroelectric domains with a single-spin scanning quantum sensor

The ability to sensitively image electric fields is important for understanding many nanoelectronic phenomena, including charge accumulation at surfaces and interfaces and field distributions in active electronic devices. A particularly exciting application is the visualization of domain patterns in ferroelectric and nanoferroic materials owing to their potential in computing and data storage. Here, we use a scanning nitrogen-vacancy (NV) microscope, well known for its use in magnetometry, to image domain patterns in piezoelectric (Pb[Zr$_{x}$Ti$_{1-x}$]O$_{3}$) and improper ferroelectric (YMnO$_{3}$) materials through their electric fields. Electric field detection is enabled by measuring the Stark shift of the NV spin using a gradiometric detection scheme. Analysis of the electric field maps allows us to discriminate between different types of surface charge distributions, as well as to reconstruct maps of the three-dimensional electric field vector and charge density. The ability to measure both stray electric and magnetic fields under ambient conditions opens exciting opportunities for the study of multiferroic and multifunctional materials and devices.

cond-mat.mes-hall↗