arXiv subjects

Martin Frentrup

Publications and source records attributed to Martin Frentrup.

4 recordsLinked to original sources

arXiv2026

Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin

Thick, defect free epitaxial layers grown using industry standard techniques are a fundamental requirement for the widespread adoption of fully vertical power devices based on ultra wide bandgap gallium oxide (Ga2O3). However, metal-organic chemical vapour deposition (MOCVD) of such layers on native beta-Ga2O3 substrates with the largest diameter (001) orientation remains relatively unexplored, and the origins of the reported surface roughening and cracking with increasing thickness are not yet fully understood. To address this, we report a systematic study of MOCVD grown beta-Ga2O3 epilayers deposited at growth rates of ~3.5 um/h, with thicknesses from 0.3 to 3.5 um. The epilayers exhibit a relatively smooth but striated surface morphology, with progressively increasing nanometre-scale roughness beyond coalescence and crack formation observed from ~1.8 um thickness. High resolution X ray diffraction reveals that, despite growth on (001) substrates, the epilayers adopt a predominantly (-401)-oriented structure from the earliest stages of growth. Rocking curve analysis further indicates a higher degree of in-plane twist than tilt, both decreasing with increasing epilayer thickness. While the epilayer and substrate are lattice-matched along the [010] in plane direction, the epitaxial alignment in the orthogonal epilayer [104] in plane direction imposes, in theory, a maximum tensile in-plane strain of approximately +4.1% arising from the underlying lattice mismatch, thereby driving crack formation perpendicular to this direction. Our results suggest that this epitaxial relationship is likely associated with faceted reconstruction of the (001) substrate surface during annealing, driven by the minimisation of surface energy under oxygen-rich MOCVD growth conditions.

cond-mat.mtrl-sci↗

arXiv2026

Competing magnetic states in a non-coplanar Kagome magnet

Non-collinear Kagome antiferromagnets (AFMs) Mn3X (X = Sn, Ga, Ge, Ir, Pt) can generate an anomalous Hall effect (AHE) despite vanishing net magnetization, enabled by broken time-reversal and inversion symmetries. However, strong in-plane anisotropy has limited studies of the AFM-AHE and electronic applications to coplanar spin configurations. Non-coplanar spin textures in these systems have been realized only in low temperature spin-glass states or at interfaces with heavy metals. Here, we report an intrinsic non-coplanar spin configuration persisting up to 400 K in cubic-phase Mn3Ge, originating from coexisting symmetric and antisymmetric exchange interactions. Competing magnetic states associated with this non-coplanar spin configuration give rise to an unconventional AHE with a magnetic-field-induced sign reversal and a hump-like feature. Our findings establish a platform for non-coplanar magnetism in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2025

A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors

Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (NID) layers, provides a straightforward methodology for producing highly reflective DBRs suitable for device overgrowth and integration, which has otherwise proven difficult in the III-nitride epitaxial system via conventional alloying. Such photonic materials can be fabricated by a lithography-free defect-driven etching process, where threading dislocations intrinsic to heteroepitaxy form nanoscale channels that facilitate etchant transport through NID layers. Here, we report the first three-dimensional characterisation of porous GaN-on-Si DBRs fabricated in this methodology with different ECE voltages, using serial-section tomography in a focused ion beam scanning electron microscope (FIB-SEM). These datasets reconstruct the pore morphology as etching proliferates through the alternating Si-doped/NID layer stack. Volumetric reconstruction enabled us to enhance the established `kebab' model for defect-driven etching by proposing a `cascade' model where etchant cascades through the material via vertical etching down nanopipes and horizontal etching across pores, forming complex networks directly related to the pathways taken. This accounts for premature nanopipe termination and discontinuities in nanopipe formation, where dislocations are observed to activate and deactivate individually. Statistical analysis of individual etching behaviour, across all dislocations for each tomograph, revealed a greater tendency to form continuous structures that follow conventional kebab behaviour at higher ECE voltages. We propose that higher ECE voltages alter the probability of dislocation etching relative to doped layer etching, thereby empowering morphological optimization through improved mechanistic understanding of ECE.

cond-mat.mtrl-sci↗

arXiv2024

Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon

Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistor (HEMT) heterostructures impose a substantial thermal resistance, throttling heat extraction, which reduces device efficiency and lifetime. Herein, bypassing the buffer, we demonstrate the direct growth of GaN after the AlN nucleation layer on silicon by metal-organic vapor phase epitaxy (MOVPE). By varying reactor pressure, we modulate the growth stress in the submicron epilayers and realise threading dislocation densities similar to that in thick buffered structures. We achieve a GaN-to-substrate thermal resistance of (11(+/-)4) ((m^2)K(GW^-1)), an order of magnitude reduction over conventional designs on silicon and one of the lowest on any non-native substrate. AlGaN/AlN/GaN heterojunctions on this platform show a characteristic 2D electron gas (2DEG), the room-temperature Hall-effect mobility of which, at over 2000 (cm^2/(V-s)), rivals the best-reported values. The low-temperature magnetoresistance of this 2DEG shows clear Shubnikov-de-Haas oscillations, a quantum lifetime > 0.180 ps, and tell-tale signatures of spin-splitting. These results may establish a new paradigm for nitride HEMTs, potentially accelerating applications from energy-efficient transistors to fundamental investigations on electron dynamics in this 2D wide-bandgap system.

physics.app-ph↗