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Martin Kalbac

Publications and source records attributed to Martin Kalbac.

At least 19 recordsLinked to original sources
arXiv2025

Valley Emission and Upconversion in Isotopically Engineered Monolayer WS$_2$ under Resonant Excitation

In the quest to optimize the optoelectronic and valleytronic properties of 2D materials, various strategies such as strain engineering, doping, and heterostructuring have been explored. In this direction, isotope engineering also offers a potential avenue to alter electron-phonon interaction and impact quasiparticle scattering processes. In this study, we investigate the dependence of sulfur isotopes on upconversion and valley scattering phenomena by collecting the resonance photoluminescence (PL) under an applied magnetic field from 0 to 14 T at 4 K for the chemical vapor deposition-grown monolayer (1L) of W$^{N}$S$_2$, W$^{32}$S$_2$, and W$^{34}$S$_2$. The upconversion of the mixed-state sulfur 1L (W$^{N}$S$_2$) exhibits one M-phonon absorption, with an obtained optical gain of nearly 30 meV, while the pure sulfur isotope labelled 1Ls (W$^{32}$S$_2$ and W$^{34}$S$_2$) require two phonons (M and $\Gamma$), yielding a gain of around 80 meV. It is also found that the exciton degree of polarization (DOP) of W$^{N}$S$_2$ changes significantly by $\sim$ -30$\%$ as the field increases from 0 to 14 T, while for W$^{32}$S$_2$ and W$^{34}$S$_2$, the exciton DOP increases by up to $\sim$ 8$\%$. Similarly, distinct changes in the DOP are observed for trions and localized excitons among all the samples, attributed to the different valley scattering phenomena. The 1L W$^{N}$S$_2$ demonstrates a combination of intraband and interband scattering, whereas in the case of W$^{32}$S$_2$ intraband scattering is preferred; W$^{34}$S$_2$ predominantly exhibits interband scattering. Finally, a phenomenological model is proposed to describe the upconversion and valley scattering processes.

cond-mat.mes-hall↗
arXiv2021

Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

The most important bands for the evaluation of strain in graphene (the 2D and 2D prime modes) are investigated. It is shown that for Bernal-stacked bilayers, the two-phonon Raman features have three different components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The individual components of the 2D and 2D prime modes are disentangled. The reported results enable addressing the properties of individual graphene layers in isotopically labelled turbostratic and Bernalstacked graphene systems.

cond-mat.mtrl-sci↗
arXiv2021

Controlled oxygen plasma treatment of single-walled carbon nanotube films improves osteoblast cells attachment and enhances their proliferation

The effects of oxidative treatment of single-walled carbon nanotubes (SWCNTs) on the adhesion and proliferation of human osteoblasts (SAOS-2) were investigated. The surface properties of SWCNTs after oxygen plasma treatment were characterised by contact angle measurement, scanning electron microscopy and Raman spectroscopy. The immunofluorescent staining of vinculin, actin filaments and nuclei was used to probe cell adhesion and growth on SWCNT films. Our results show that adhesion and proliferation of human osteoblasts cultivated on SWCNT films indeed depends on the degree of an oxidative treatment. As an optimal procedure was found the treatment with oxygen plasma for 5 min. In the latter case the osteoblasts form a confluent layer with pronounced focal adhesions throughout the entire cell body. The optimal conditions compromise the effect of hydrophilic character of SWCNT films and the level of damage of SWCNT surface.

physics.bio-ph↗
arXiv2021

Towards quantification of the ratio of the single and double wall carbon nanotubes in their mixtures:An In situ Raman spectroelectrochemical study

Mixtures containing different weight ratios of single wall carbon nanotubes (SWCNT) and double wall carbon nanotubes (DWCNT) were prepared and studied by in-situ Raman spectroelectrochemistry. Two components of the G-prime mode in the Raman spectra, which can be resolved at high electrode potentials, were assigned to the signals from inner tubes of DWCNT and outer tubes of DWCNT together with SWCNT. The dependence of the ratios of these two components of the G-prime mode on the nominal amount of SWCNT and DWCNT in the samples was simulated so that the residual amount of SWCNT in the original DWCNT could be determined. Additionally, the individual contributions of all components of carbon nanotubes into the total area of the G-prime mode at high electrode potentials were estimated from the simulation.

cond-mat.mtrl-sci↗
arXiv2021

Temperature and Face Dependent Copper-Graphene Interactions

The interaction between graphene and metals represents an important issue for the large-area preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and manipulating the level of interaction between graphene and copper single crystals through heat treatment, at temperatures from 298K to 1073K. We performed an in-situ Raman spectroscopy showing Cu face-specific behavior of the overlying graphene during the heat treatment. On Cu(111) the interaction is consistent with theoretical predictions and remains stable, whereas on Cu(100) and Cu(110), the initially very weak interaction and charge transfer can be tuned by heating. Our results also suggest that graphene grown on Cu(100) and Cu(110) is detached from the copper substrate, thereby possibly enabling an easier graphene transfer process as compared to Cu (111).

cond-mat.mtrl-sci↗
arXiv2021

Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

Correct defect quantification in graphene samples is crucial both for fundamental and applied re-search. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the relation between the Raman features and the amount of defects in multilayered graphene samples has not been experimentally verified. In this study we intentionally created defects in single layer graphene, turbostratic bilayer graphene and Bernal stacked bilayer graphene by oxygen plasma. By employing isotopic labelling, our study reveals substantial differences of the effects of plasma treatment on individual layers in bilayer graphene with different stacking orders. In addition Raman spectroscopy evidences scattering of phonons in the bottom layer by defects in the top layer for Bernal-stacked samples, which can in general lead to overestimation of the number of defects by as much as a factor of two.

cond-mat.mtrl-sci↗
arXiv2021

Anomalous Freezing of Low Dimensional Water Confined in Graphene Nanowrinkles

Various properties of water are affected by confinement as the space-filling of the water molecules is very different from bulk water. In our study, we challenged the creation of a stable system in which water molecules are permanently locked in nanodimensional graphene traps. For that purpose, we developed a technique, nitrocellulose-assisted transfer of graphene grown by chemical vapor deposition, which enables capturing of the water molecules below an atomically thin graphene membrane structured into a net of regular wrinkles with a lateral dimension of about 4 nm. After successfully confining water molecules below a graphene monolayer, we employed cryogenic Raman spectroscopy to monitor the phase changes of the confined water as a function of the temperature. In our experiment system, the graphene monolayer structured into a net of fine wrinkles plays a dual role: (i) it enables water confinement and (ii) serves as an extremely sensitive probe for phase transitions involving water via graphene-based spectroscopic monitoring of the underlying water structure. Experimental findings were supported with classical and path integral molecular dynamics simulations carried out on our experimental system.

cond-mat.mes-hall↗
arXiv2020

Strong Localization Effects in the Photoluminescence of Transition Metal Dichalcogenide Heterobilayers

The emergence of various exciton-related effects in transition metal dichalcogenides (TMDC) and their heterostructures has inspired a significant number of studies and brought forth several possible applications. Often, standard photoluminescence (PL) with microscale lateral resolution is utilized to identify and characterize these excitonic phenomena, including interlayer excitons (IEXs). We studied the local PL signatures of van der Waals heterobilayers composed of exfoliated monolayers of the (Mo,W)(S,Se)$_2$ TMDC family with high spatial resolution (down to 30 nm) using tip-enhanced photoluminescence (TEPL) with different orders (top/bottom) and on different substrates. We evidence that other PL signals may appear near the reported energy of the IEX transitions, possibly interfering in the interpretation of the results. While we can distinguish and confirm the presence of IEX-related PL in MoS$_2$-WS$_2$ and MoSe$_2$-WSe$_2$, we find no such feature in the MoS$_2$-WSe$_2$ heterobilayer in the spectral region of 1.7-1.4 eV, where the IEXs of this heterobilayer is often reported. We assign the extra signals to the PL of the individual monolayers, in which the exciton energy is altered by the local strains caused by the formation of blisters and nanobubbles, and the PL is extremely enhanced due to the decoupling of the layers. We prove that even a single nanobubble as small as 60 nm---hence not optically visible---can induce such a suspicious PL feature in the micro-PL spectrum of an otherwise flat heterobilayer.

cond-mat.mes-hall↗
arXiv2019

Coexistence of Van Hove Singularities and Pseudomagnetic Fields in Modulated Graphene Bilayer

The stacking and bending of graphene are trivial but extremely powerful agents of control over graphene's manifold physics. By changing the twist angle, one can drive the system over a plethora of exotic states via strong electron correlation, thanks to the moir\'e superlattice potentials, while the periodic or triaxial strains induce discretization of the band structure into Landau levels without the need for an external magnetic field. We fabricated a hybrid system comprising both the stacking and bending tuning knobs. We have grown the graphene monolayers by chemical vapor deposition, using $^{12}$C and $^{13}$C precursors, which enabled us to individually address the layers through Raman spectroscopy mapping. We achieved the long-range spatial modulation by sculpturing the top layer ($^{13}$C) over uniform magnetic nanoparticles (NPs) deposited on the bottom layer ($^{12}$C). An atomic force microscopy study revealed that the top layer tends to relax into pyramidal corrugations with C$_3$ axial symmetry at the position of the NPs, which have been widely reported as a source of large pseudomagnetic fields (PMFs) in graphene monolayers. The modulated graphene bilayer (MGBL) also contains a few micrometer large domains, with the twist angle ~ 10$^{\circ}$, which were identified via extreme enhancement of the Raman intensity of the G-mode due to formation of Van Hove singularities (VHSs). We thereby conclude that the twist induced VHSs coexist with the PMFs generated in the strained pyramidal objects without mutual disturbance. The graphene bilayer modulated with magnetic NPs is a non-trivial hybrid system that accommodates features of twist induced VHSs and PMFs in environs of giant classical spins.

cond-mat.mes-hall↗
arXiv2019

Imaging Nanoscale Inhomogeneities and Edge Delamination in As-Grown MoS2 Using Tip-Enhanced Photoluminescence

Methods for nanoscale material characterization are in ever-increasing demand, especially those that can provide a broader range of information at once. Near-field techniques based on combinations of scanning probe microscopy (SPM) and Raman or photoluminescence (PL) spectroscopy (tip-enhanced Raman spectroscopy [TERS] and/or tip-enhanced photoluminescence [TEPL]) are, thanks to their capabilities and fast development, strong candidates for becoming widespread across the scientific community as SPM and Raman microscopy did only a decade or two ago. Herein, a gap-less TEPL study is performed directly on as-grown MoS2 monolayer samples without any pretreatment or transfer, i.e., without the utilization of plasmonic substrate. Thanks to a mapping resolution as low as a few tens of nanometers, homogeneous layer interiors from defective edge fronts in the grown monolayers can be distinguished. With the aid of additional high-resolution SPM modes, like local surface potential and capacitance measurements, together with nanomechanical mapping, a combination of defects and a lack of substrate doping is suggested as being responsible for the observed PL behavior in the partially delaminated MoS2 layers. In contrast, mechanically exfoliated flakes show topography- and contamination-related heterogeneities in the whole flake area.

physics.app-ph↗
arXiv2018

Graphene under direct compression: stress effects and interlayer coupling

In this work we explore mechanical properties of graphene samples of variable thickness. For this purpose, we coupled a high pressure sapphire anvil cell to a micro-Raman spectrometer. From the evolution of the G band frequency with stress we document the importance the substrate has on the mechanical response of graphene. On the other hand, the appearance of disorder as a conse-quence of the stress treatment has a negligible effect on the high stress behaviour of graphene.

cond-mat.mtrl-sci↗
arXiv2018

Strain Assessment in Graphene Through the Raman 2D' Mode

Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two bands might be biased, especially under uniaxial strain, by the effects of charge-transfer doping. Therefore, it is extremely desirable to use another Raman band, less affected by doping, but with a defined and measurable behavior under strain. The Raman 2D' mode is in this sense the ideal feature for the evaluation of strain levels in stretched graphene monolayers, suitable for this task even under different experimental conditions. The sensitivity and accuracy of the approach through 2D' mode is on the same level as through the G mode, however, the clear advantage of the 2D' arises when doping effects are present in the sample.

cond-mat.mtrl-sci↗
arXiv2018

Raman spectroscopy and In-situ Raman spectroelectrochemistry of isotopically engineered graphene systems

The unique properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset which extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, i.e., doping, represents a viable way of shifting the Fermi level. In particular, the electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in-situ Raman spectroscopy, i.e., the in-situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy can readily monitor not only the changes in the doping level, but it can give information also on eventual stress or disorder in the material. However, when employing Raman spectroscopy, one of its main strengths lies in the utilization of isotope engineering during the chemical vapor deposition (CVD) growth of the graphene samples. The in-situ Raman spectroelectrochemical study of multi-layered systems with smartly designed isotope compositions in individual layers can provide a plethora of knowledge about the mutual interactions: (i) between the graphene layers themselves, (ii) between graphene layers and their directly adjacent environment (e.g., substrate or electrolyte), and (iii) between graphene layers and their extended environment, which is separated from the layer by a certain number of additional graphene layers.

cond-mat.mtrl-sci↗
arXiv2018

Stress and charge transfer in uniaxially strained CVD graphene

Mechanical properties of graphene prepared by chemical vapor deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical performance of CVD graphene (simply supported or embedded in polymer matrix), transferred by two different techniques, under uniaxial loading with simultaneous in-situ monitoring by Raman microspectroscopy. The level of charge transfer doping and strain is assessed using the vector analysis modified for uniaxial strain. The strain distribution across the samples varies significantly, owing to the growth and transfer process, which induces wrinkles and faults in the CVD graphene. In simply supported specimens, the stress transfer efficiency is generally very low and the changes in Raman spectra are dominated by variations in the charge transfer originating from the realignment of the domains on the substrate upon the application of strain. In contrast, samples covered with an additional polymer layer exhibit an improved stress transfer efficiency, and the alterations of charge doping levels are negligible. In fully embedded specimens, the variations in stress transfer efficiencies are caused by the size of the effective graphene domains defined by cracks, folds and or/wrinkles.

cond-mat.mtrl-sci↗
arXiv2017

Fine Tuning of Optical Transition Energy of Twisted Bilayer Graphene via Interlayer Distance Modulation

Twisted bilayer graphene (tBLG) represents a family of unique materials with optoelectronic properties tuned by the rotation angle between the two layers. The presented work shows an additional way of tweaking the electronic structure of tBLG: by modifying the interlayer distance, for example by a small uniaxial out-of-plane compression. We have focused on the optical transition energy, which shows a clear dependence on the interlayer distance, both experimentally and theoretically.

cond-mat.mes-hall↗
arXiv2015

Graphene wrinkling induced by monodisperse nanoparticles: facile control and quantification

Controlled wrinkling of single-layer graphene (1-LG) at nanometer scale was achieved by introducing monodisperse nanoparticles (NPs), with size comparable to the strain coherence length, underneath the 1-LG. Typical fingerprint of the delaminated fraction of 1-LG is identified as substantial contribution to the principal Raman modes of the 1-LG. Correlation analysis of the Raman shift of the modes clearly resolved the 1-LG in contact and delaminated from the substrate, respectively. Intensity of Raman features of the delaminated 1-LG increases linearly with the amount of the wrinkles, determined by advanced processing of atomic force microscopy data. Our study thus offers universal approach for both fine tuning and facile quantification of the graphene topography up to ~ 60% of wrinkling.

cond-mat.mes-hall↗
arXiv2015

Formation of wrinkles on graphene induced by nanoparticles: atomic force microscopy study

Wrinkles in monolayer graphene (GN) affect the GN electronic and transport properties. Defined network of wrinkles can be reached by placing the GN on the substrate decorated with the nanoparticles (NPs). In order to explain mechanism behind the topographically induced changes of the GN electronic structure and to correlate it with the wrinkling, correct description of the GN morphology is of high demand. We demonstrate here how to determine from the atomic force microscopy (AFM) images whether the GN is in the contact with the substrate or it is delaminated, how is the wrinkling of the layer connected with the density of the NPs and if there is the preferential orientation of wrinkles. Also the relevance of detection of the NPs hidden beneath the GN layer is discussed. The study was done on nine samples of the GN on the top of Si-SiO2 substrate, decorated with the metal-oxide NPs of nominal diameter 6 and 10 nm. NP density varied in a range of 20 up to 470 NPs per um2. The projected area of wrinkles was increasing linearly with the increasing NP density, independently on the NP size.

cond-mat.mes-hall↗