arXiv subjects

Martin Latorre

Publications and source records attributed to Martin Latorre.

3 recordsLinked to original sources

arXiv2026

Altermagnetic memcapacitors

We propose a spintronic memcapacitance effect based upon altermagnetic multiferroic materials. We identify the rare-earth vanadates RVO$_3$ as a concrete platform, with all key parameters tied to measured properties. Under an oscillating electric field, the resulting charge and spin currents trace pinched hysteresis loops that close tangentially at zero field -- the hallmark of memcapacitive, type-2 memdevice behavior -- with charge current densities exceeding, by a factor of about 3.6, the lowest deterministic switching current density reported for optimized spin-transfer-torque magnetic tunnel junctions. We model the system theoretically as a dimerized two-orbital $d$-wave altermagnetic lattice via a Su--Schrieffer--Heeger-type bond modulation, in the spirit of the spin-dependent Rice--Mele model, thereby coupling the altermagnetic order to field-switchable charge and spin polarizations. The associated polarization loops close tangentially at zero field and yield a sign-changing, history-dependent ``butterfly'' differential capacitance, identifying the device as a genuine memcapacitor. Both responses are protected by the same inversion symmetry, so charge and spin channels switch simultaneously with no separate control needed. These results establish altermagnetic multiferroics, realized concretely in RVO$_3$, as an efficient, non-volatile platform for combined electric and spintronic memory.

cond-mat.mes-hall↗

arXiv2026

Electrically Switchable Spintronics in a Multiferroic Altermagnet

We introduce a minimal model of a two-dimensional lattice that, upon spontaneous symmetry breaking, simultaneously develops altermagnetic order, a finite electric polarization, and a spin-polarized transport response, all of which are controlled by an external electric field. By coupling a dimerized altermagnet to an external electric field, we show that the three order parameters are not merely compatible but dynamically entangled, so that switching one (for instance, reversing the polarization with an electric field) necessarily reconfigures the other two. We show that this model offers a clear physical blueprint for designing next-generation spintronic logic and pure spin current memdevices that merge the ultrafast, stray-field-free advantages of compensated magnets with the low-power switching architectures of ferroelectrics.

cond-mat.mes-hall↗

arXiv2026

Antiferromagnetic Pure Spin Current Memdevices

Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily being accompanied by net charge transport. This opens new possibilities for low-power information processing and novel device architectures. In this work, we propose a novel effect, the spintronic-magneto-impedictive effect, as the theoretical basis for a pure spin-current memory-like device based on antiferromagnetic components. We focus on materials that can be modeled by the so-called spin-Rice-Mele Hamiltonian, incorporating a magnetic field gradient that explicitly breaks inversion symmetry. Our results shed light on how spin currents are generated and controlled, providing new insights into the potential of these materials for next-generation spintronic technologies.

cond-mat.mes-hall↗