arXiv subjects

Martin Míšek

Publications and source records attributed to Martin Míšek.

9 recordsLinked to original sources

arXiv2026

Optimizing high-temperature electron mobility in single-crystal Bi$_2$O$_2$Se based on its unconventional dependence on concentration

Quasi-2D Bi$_2$O$_2$Se is part of an intensive materials research effort aimed at finding new semiconductors that outperform silicon-based electronics in terms of speed and power consumption. This material exhibits exceptionally high carrier mobility at low temperatures but mediocre mobility at 300 K. Its high mobility is generally associated with its high permittivity ($\varepsilon_r$~500), which is also associated with metallicity persisting down to very low carrier concentrations. This material exhibits a counterintuitive increase in carrier mobility as the concentration increases. The connection between low both carrier concentration and mobility in Se-rich conditions, and both high carrier concentration and mobility in Se-poor conditions suggests that the increase is related to native defects. We demonstrate that these defects can alter the effective mass of charge carriers. Specifically, substitutional Se(Bi) defects, which appear under Se-rich conditions, destroy the Bi$_2$O$_2$ channel and compromise charge transport properties. These defects increase the effective mass of charge carriers transforming the original semiconductor into a semimetal and introducing holes into charge transport. Additionally, we show that single crystals are generally inhomogeneous, particularly those grown under Se-rich conditions. Unlike Se-poor conditions, Se-rich conditions induce a higher concentration of dislocations and extraneous phases. These findings suggest that the perfection of the Bi$_2$O$_2$ channel is crucial for mobility, particularly at room temperature.

cond-mat.mtrl-sci↗

arXiv2026

Phonon properties and unconventional heat transfer in quasi-2D $Bi_2O_2Se$ crystal

Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding: carrier mobility increases non-intuitively with carrier concentration; the observed $T^2$ temperature dependence of resistivity lacks explanation. Moreover, a very high relative out-of-plane permittivity of about 150 has been reported in the literature. A proper explanation for such a high permittivity is still lacking. We have performed infrared (IR) reflectivity and Raman scattering experiments on a large perfect single crystal with defined mosaicity, carrier concentration and mobility. Five of the eight phonons allowed by factor group theory have been observed and their symmetries determined. The IR spectra show that the permittivity measured in the tetragonal plane is as high as $ε_r{\approx}500$, and this high value is due to a strong polar phonon with a low frequency of ~34 $cm^{-1}$ (~1 THz). Such an unusually high permittivity allows the screening of charge defects, leading to the observation of high electron mobility at low temperatures. It also allows effective modulation doping providing a platform for high performance 2D electronics. DFT calculations suggest the existence of a very low frequency acoustic phonon ~14 $cm^{-1}$ (~0.4 THz). Both the low frequency phonons cause anomalous phonon DOS, which is reflected in the unconventional temperature dependence of the heat capacity, $c_M{\approx}T^{3.5}$. The temperature-dependent, two-component group velocity is proposed to explains the unusual temperature dependence of the thermal conductivity, $κ{\approx}T^{1.5}$

cond-mat.mtrl-sci↗

arXiv2024

Anomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor

Following the recent observation of anomalous Hall effect in antiferromagnetic hexagonal MnTe thin films, related phenomena at finite frequencies have come into focus. Magnetic circular dichroism (MCD) is the key material property here. In the x-ray range, the XMCD has already been demonstrated and used to visualise domains via photoemission electron microscopy (PEEM). Here we report on MCD in optical range and discuss its microscopic mechanism.

cond-mat.mtrl-sci↗

arXiv2023

Robust intralayer antiferromagnetism and tricriticality in a van der Waals compound: VBr3 case

We studied magnetic states and phase transitions in the van der Waals antiferromagnet VBr3 by specific heat and magnetization measurements of single crystals in high magnetic fields and by ab initio density functional theory calculations focused on exchange interactions. The magnetization behavior resembles Ising antiferromagnets with magnetic moments kept in the out-of-plane direction by strong uniaxial magnetocrystalline anisotropy. The out-of-plane magnetic field induces a spin-flip metamagnetic transition, which is of first-order type at low temperatures while at higher temperatures the transition becomes continuous. The first-order and continuous transition segments in the field-temperature phase diagram meet at a tricritical point at = 12 K. The magnetization response to the in-plane field manifests a continuous spin-flop transition, which at 2 K terminates at a field mu0Hc = 27 T that can serve as an estimate of the anisotropy field in VBr3. The magnetization curves above the metamagnetic transition saturate at the same value of magnetic moment musat = 1.2 muB/f.u., which is much smaller than the spin-only (S = 1) moment of the V3+ ion. The reduced moment can be explained by the existence of a significant orbital magnetic moment antiparallel to the spin. The orbital moment is a key ingredient of a mechanism responsible for the observed large anisotropy. The exact energy evaluation of possible magnetic orders unambiguously shows that the magnetic ground state of VBr3 is the intralayer zigzag antiferromagnetic order that renders the antiferromagnetic ground state significantly more stable against the spin-flip transition than the other options. The calculations also predict that a minimal distortion of the Br ion sublattice causes a radical change of the orbital occupation in the ground state, connected with the formation of the orbital moment and the stability of magnetic order.

cond-mat.mtrl-sci↗

arXiv2022

Can the Ferroelectric Soft Mode Trigger an Antiferromagnetic Phase Transition?

Type-II multiferroics, where spin interactions induce a ferroelectric polarization, are interesting for new device functionalities due to large magnetoelectric coupling. We report on a new type of multiferroicity in the quadruple-perovskite $\text{BiMn}_{\text{3}}\text{Cr}_{\text{4}}\text{O}_{\text{12}}$, where an antiferromagnetic phase is induced by the structural change at the ferroelectric phase transition. The displacive nature of the ferroelectric phase transition at 125 K, with a crossover to an order-disorder mechanism, is evidenced by a polar soft phonon in the THz range and a central mode. Dielectric and pyroelectric studies show that the ferroelectric critical temperature corresponds to the previously reported Néel temperature of the $\text{Cr}^{\text{3+}}$ spins. An increase in ferroelectric polarization is observed below 48 K, coinciding with the Néel temperature of the $\text{Mn}^{\text{3+}}$ spins. This increase in polarization is attributed to an enhanced magnetoelectric coupling, as no change in the crystal symmetry below 48 K is detected from infrared and Raman spectra.

cond-mat.mtrl-sci↗

arXiv2019

Crystal Structures and Phase Transitions of the van-der-Waals Ferromagnet VI3

The results of a single-crystal X-ray-diffraction study of the evolution of crystal structures of VI3 with temperature with emphasis on phase transitions are presented. Some related specific-heat and magnetization data are included. The existence of the room-temperature trigonal crystal structure R-3 (148) has been confirmed. Upon cooling, VI3 undergoes a structural phase transition to a monoclinic phase at Ts ~ 79 K. Ts is reduced in magnetic fields applied along the trigonal c-axis. When VI3 becomes ferromagnetic at TFM1 ~ 50 K, magnetostriction-induced changes of the monoclinic-structure parameters are observed. Upon further cooling, the monoclinic structure transforms into a triclinic variant at 32 K which is most likely occurring in conjunction with the previously reported transformation of the ferromagnetic structure. The observed phenomena are preliminarily attributed to strong magnetoelastic interactions.

cond-mat.str-el↗

arXiv2018

Pressure Evolution of Magnetism in URhGa

In this paper, we report the results of an ambient and high pressure study of a 5f-electron ferromagnet URhGa. The work is focused on measurements of magnetic and thermodynamic properties of a single crystal sample and on the construction of the p-T phase diagram. Diamond anvil cells were employed to measure the magnetization and electrical resistivity pressures up to ~ 9 GPa. At ambient pressure, URhGa exhibits collinear ferromagnetic ordering of uranium magnetic moments μU ~ 1.1 μB (at 2 K) aligned along the c-axis of the hexagonal crystal structure below the Curie temperature TC = 41K. With the application of pressure up to 5GPa the ordering temperature TC initially increases whereas the saturated moment slightly decreases. The rather unexpected evolution is put in the context of the UTX family of compounds.

cond-mat.mtrl-sci↗

arXiv2018

Antiferromagnetism and phase transitions in non-centrosymmetric UIrSi$_3$

Magnetization and specific heat measurements on a UIrSi3 single crystal reveal Ising-like antiferromagnetism below T$_N$ = 41.7 K with easy magnetization direction along the c-axis of tetragonal structure. The antiferromagentic ordering is suppressed by magnetic fields > H$_c$ (μ$_0$H$_c$ = 7.3 T at 2 K) applied along the c-axis. The first-order metamagnetic transition at H$_c$ exhibits asymmetric hysteresis reflecting a slow reentry of the complex ground-state antiferromagnetic structure with decreasing field. The hysteresis narrows with increasing temperature and vanishes at 28 K. A second-order metamagnetic transition is observed at higher temperatures. The point of change of the order of transition in the established H-T magnetic phase diagram is considered as the tricritical point (at T$_{tc}$ = 28 K and μ$_0$H$_{tc}$ = 5.8 T). The modified-Curie-Weiss-law fits of temperature dependence of the a- and c-axis susceptibility provide opposite signs of Weiss temperatures, Θ$_p^a$ ~ -51 K and Θ$_p^c$ ~ +38 K, respectively. This result and the small value of μ$_0$H$_c$ contrasting to the high T$_N$ indicate competing ferromagnetic and antiferromagnetic interactions responsible for the complex antiferromagnetic ground state. The simultaneous electronic-structure calculations focused on the total energy of ferromagentic and various antiferromagnetic states, the U magnetic moment and magnetocrystalline anisotropy provide results consistent with experimental findings and the suggested physical picture of the system.

cond-mat.str-el↗

arXiv2016

Pressure-induced quantum phase transition in the itinerant ferromagnet UCoGa

In this paper, we report the results of a high pressure study of the itinerant 5f-electron ferromagnet UCoGa. The work is focused on probing the expected ferromagnet-to-paramagnet quantum phase transition induced by high pressure and on the general features of the P-T(-H) phase diagram. Diamond anvil cells were employed to measure the magnetization and electrical resistivity under pressures up to ~ 10 GPa.At ambient pressure, UCoGa exhibits collinear ferromagnetic ordering of uranium magnetic moments μU ~ 0.74 μB (at 2 K) aligned along the c-axis of the hexagonal crystal structure below Curie temperature TC = 48K. With the application of pressure, gradual decrease of both, TC and the saturated magnetic moment, has been observed up to pressures ~ 6 GPa. This is followed by a sharp drop of magnetic moment and a sudden disappearance of the magnetic order at the pressure of 6.5 GPa, suggesting a first-order phase transition, as expected for a clean system. The low temperature power law dependence of the electrical resistivity shows distinct anomalies around the ~ 6 GPa, consistent with the pressure evolution of the magnetic moment and the ordering temperature. The tricritical point of the UCoGa phase diagram is located at approximately ~ 30 K and ~ 6 GPa.

cond-mat.mtrl-sci↗