Searcharxiv⌕ Search

arXiv subjects

Martin Otto

Publications and source records attributed to Martin Otto.

At least 37 records · Page 2Linked to original sources
arXiv2020

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2 inch) production and utilise this h-BN as a protective layer for graphene towards integrated (opto) electronic device fabrication.

cond-mat.mtrl-sci↗
arXiv2020

Inquisitive bisimulation

Inquisitive modal logic InqML is a generalisation of standard Kripke-style modal logic. In its epistemic incarnation, it extends standard epistemic logic to capture not just the information that agents have, but also the questions that they are interested in. Technically, InqML fits within the family of logics based on team semantics. From a model-theoretic perspective, it takes us a step in the direction of monadic second-order logic, as inquisitive modal operators involve quantification over sets of worlds. We introduce and investigate the natural notion of bisimulation equivalence in the setting of InqML. We compare the expressiveness of InqML and first-order logic in the context of relational structures with two sorts, one for worlds and one for information states. We characterise inquisitive modal logic, as well as its multi-agent epistemic S5-like variant, as the bisimulation invariant fragment of first-order logic over various natural classes of two-sorted structures. These results crucially require non-classical methods in studying bisimulation and first-order expressiveness over non-elementary classes of structures, irrespective of whether we aim for characterisations in the sense of classical or of finite model theory.

math.LO↗
arXiv2020

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement.

cond-mat.mes-hall↗
arXiv2020

Driving-induced resonance narrowing in a strongly coupled cavity-qubit system

We study a system consisting of a superconducting flux qubit strongly coupled to a microwave cavity. Externally applied qubit driving is employed in order to manipulate the spectrum of dressed states. We observe resonance narrowing in the region where the splitting between the two dressed fundamental resonances is tuned to zero. The narrowing in this region of overlapping resonances can be exploited for long-time storage of quantum states. In addition, we measure the response to strong cavity mode driving, and find a qualitative deviation between the experimental results and the predictions of a semiclassical model. On the other hand, good agreement is obtained using theoretical predictions obtained by numerically integrating the master equation governing the system's dynamics. The observed response demonstrates a process of a coherent cancellation of two meta-stable dressed states.

quant-ph↗
arXiv2020

Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

physics.app-ph↗
arXiv2019

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors that influence output conductance, especially at short channel lengths and-or large drain bias: short-channel electrostatics, saturation velocity, graphene-dielectric interface traps, and self-heating effects. As a testbed for our investigation, we analyzed fabricated GFETs with high extrinsin cutoff frequency fT,x (34 GHz) and fmax (37 GHz). Our simulations allow for a microscopic (local) analysis of the channel parameteres such as carrier concentration, drift and saturation velocities. For biases far away from the Dirac voltage, where the channel behaves as unipolar, we confirmed that the higher is the drift velocity, as close as possible to the saturation velocity, the greater fmax is. However, the largest fmax is recorded at biases near the crossover between unipolar and bipolar behavior, where it does not hold that the highest drift velocity maximizes fmax. In fact, the position and magnitude of the largest fmax depend on the complex interplay between the carrier concentration and total velocity which, in turn, are impacted by the self-heating. Importantly, this effect was found to severely limit radio-frequency performance, reducing the maximum fmax from around 60 to 40 GHz.

physics.app-ph↗
arXiv2019

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.

physics.app-ph↗
arXiv2018

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN) stacks reveals average sheet conductivity >1 mS/sq and average mobility of 2500 cm$^{2}$/Vs. Improved output conductance is observed in direct current (DC) measurements under ambient conditions, indicating potential for radio-frequency (RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a low frequency signal amplifier circuit. RF characterization of the GFETs yields an f$_{T}$ x L$_{g}$ product of 2.64 GHz$μ$m and an f$_{Max}$ x L$_{g}$ product of 5.88 GHz$μ$m. This study presents for the first time THz-TDS usage in combination with other characterization methods for device performance assessment on BN/G/BN stacks. The results serve as a step towards scalable, all CVD 2D material-based FETs for CMOS compatible future nanoelectronic circuit architectures.

physics.app-ph↗
arXiv2018

High Performance Metal-Insulator-Graphene Diodes for Radio Frequency Power Detection Application

Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A/cm^2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V^{-1}, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V/W at 2.4 GHz and 1.1 V/W at 49.4 GHz.

physics.app-ph↗
arXiv2017

Encapsulated graphene based Hall sensors on foil with increased sensitivity

The encapsulation of graphene based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN). The Hall sensor with PMMA encapsulation already shows higher sensitivity compared to the one without encapsulation. However, the Hall sensor with graphene encapsulated between two stacks of hBN shows a current and a voltage normalized sensitivity of up to 2270 V/AT and 0.68 V/VT respectively, which are the highest reported sensitivity values for Hall sensors on foil so far.

physics.app-ph↗
arXiv2017

Flexible Hall Sensors Based on Graphene

The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 um thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil. Voltage and current normalized sensitivities of up to 0.096 V/VT and 79 V/AT were measured, respectively. These values are comparable to the sensitivity of rigid silicon based Hall sensors and are the highest values reported so far for any flexible Hall sensor devices. The sensitivity of the Hall sensor shows no degradation after being bent to a minimum radius of 4 mm, which corresponds to a tensile strain of 0.6%, and after 1,000 bending cycles to a radius of 5 mm.

physics.app-ph↗
arXiv2017

Bisimulation in Inquisitive Modal Logic

Inquisitive modal logic, InqML, is a generalisation of standard Kripke-style modal logic. In its epistemic incarnation, it extends standard epistemic logic to capture not just the information that agents have, but also the questions that they are interested in. Technically, InqML fits within the family of logics based on team semantics. From a model-theoretic perspective, it takes us a step in the direction of monadic second-order logic, as inquisitive modal operators involve quantification over sets of worlds. We introduce and investigate the natural notion of bisimulation equivalence in the setting of InqML. We compare the expressiveness of InqML and first-order logic, and characterise inquisitive modal logic as the bisimulation invariant fragments of first-order logic over various classes of two-sorted relational structures. These results crucially require non-classical methods in studying bisimulations and first-order expressiveness over non-elementary classes.

cs.LO↗
arXiv2017

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance.

cond-mat.mes-hall↗
arXiv2017

Graphene photodetectors with a bandwidth larger than 76 GHz fabricated in a 6 inch wafer process line

In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit/s per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6 inch silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices.

cond-mat.mes-hall↗
arXiv2016

Identifying suitable substrates for high-quality graphene-based heterostructures

We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.

cond-mat.mtrl-sci↗
arXiv2016

Superharmonic Resonances in a Strongly Coupled Cavity-Atom System

We study a system consisting of a superconducting flux qubit strongly coupled to a microwave cavity. The fundamental cavity mode is externally driven and the response is investigated in the weak nonlinear regime. We find that near the crossing point, at which the resonance frequencies of the cavity mode and qubit coincide, the sign of the Kerr coefficient changes, and consequently the type of nonlinear response changes from softening to hardening. Furthermore, the cavity response exhibits superharmonic resonances when the ratio between the qubit frequency and the cavity fundamental mode frequency is tuned close to an integer value. The nonlinear response is characterized by the method of intermodulation and both signal and idler gains are measured. The experimental results are compared with theoretical predictions and good qualitative agreement is obtained. The superharmonic resonances have potential for applications in quantum amplification and generation of entangled states of light.

quant-ph↗
arXiv2015

Pebble Games and Linear Equations

We give a new, simplified and detailed account of the correspondence between levels of the Sherali-Adams relaxation of graph isomorphism and levels of pebble-game equivalence with counting (higher-dimensional Weisfeiler-Lehman colour refinement). The correspondence between basic colour refinement and fractional isomorphism, due to Tinhofer (1986, 1991) and Ramana, Scheinerman and Ullman (1994), is re-interpreted as the base level of Sherali-Adams and generalised to higher levels in this sense by Atserias and Maneva (2012) and Malkin (2014), who prove that the two resulting hierarchies interleave. In carrying this analysis further, we here give (a) a precise characterisation of the level-k Sherali-Adams relaxation in terms of a modified counting pebble game; (b) a variant of the Sherali-Adams levels that precisely match the k-pebble counting game; (c) a proof that the interleaving between these two hierarchies is strict. We also investigate the variation based on boolean arithmetic instead of real/rational arithmetic and obtain analogous correspondences and separations for plain k-pebble equivalence (without counting). Our results are driven by considerably simplified accounts of the underlying combinatorics and linear algebra.

cs.LO↗