arXiv subjects

Martin Rodriguez-Vega

Publications and source records attributed to Martin Rodriguez-Vega.

26 records · Page 2Linked to original sources

arXiv2020

Group theory study of the vibrational modes and magnetic order in the topological antiferromagnet MnBi$_2$Te$_4$

We employ group theory to study the properties of the lattice vibrations and magnetic order in the antiferromagnetic topological insulator MnBi$_2$Te$_4$, both in bulk and few-layer form. In the paramagnetic phase, we obtain the degeneracies, the selection rules, and real-space displacements for the lattice vibrational modes for different stacking configurations. We discuss how magnetism influences these results. As a representative example, we consider a double septuple layer system and obtain the form of the magnetic order allowed by the symmetries of the crystal. We derive the allowed coupling terms that describe the paramagnetic to antiferromagnetic transition. Finally, we discuss the implications of our results for Raman scattering and other optical measurements. Our work sets the stage for a deeper understanding of the interplay of lattice modes, band topology, and magnetic order in MnBi$_2$Te$_4$ and other symmetry-related materials.

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arXiv2020

Floquet engineering of twisted double bilayer graphene

Motivated by the recent experimental realization of twisted double bilayer graphene (TDBG) samples we study, both analytically and numerically, the effects of circularly polarized light propagating in free space and confined into a waveguide on the band structure and topological properties of these systems. These two complementary Floquet protocols allow us to selectively tune different parameters of the system by varying the intensity and the frequency of the light. For the drive protocol in free space, in the high-frequency regime, we find that in TDBG with AB/BA stacking, we can selectively close the zone-center quasienergy gaps around one valley while increasing the gaps near the opposite valley by tuning the parameters of the drive. In TDBG with AB/AB stacking, a similar effect can be obtained upon the application of a perpendicular static electric field. Furthermore, we study the topological properties of the driven system in different settings, provide accurate effective Floquet Hamiltonians, and show that relatively strong drives can generate flat bands. On the other hand, longitudinal light confined into a waveguide couples to the components of the interlayer hopping that are perpendicular to the TDBG sheet, allowing for selective engineering of the bandwidth of Floquet zone center quasienergy bands without breaking the symmetries of the static system.

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arXiv2020

Effective Floquet Hamiltonians for periodically-driven twisted bilayer graphene

We derive effective Floquet Hamiltonians for twisted bilayer graphene driven by circularly polarized light in two different regimes beyond the weak-drive, high frequency regime. First, we consider a driving protocol relevant for experiments with frequencies smaller than the bandwidth and weak amplitudes and derive an effective Hamiltonian, which through a symmetry analysis, provides analytical insight into the rich effects of the drive. We find that circularly polarized light at low frequencies can selectively decrease the strength of AA-type interlayer hopping while leaving the AB-type unaffected. Then, we consider the intermediate frequency, and intermediate-strength drive regime. We provide a compact and accurate effective Hamiltonian which we compare with the Van Vleck expansion and demonstrate that it provides a significantly improved representation of the exact quasienergies. Finally, we discuss the effect of the drive on the symmetries, Fermi velocity and the gap of the Floquet flat bands.

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arXiv2020

Floquet engineering of interlayer couplings: Tuning the magic angle of twisted bilayer graphene at the exit of a waveguide

We introduce a new approach that allows one complete control over the modulation of the effective twist angle change in few-layer van der Waals heterostructures by irradiating them with longitudinal waves of light at the end of a waveguide. As a specific application, we consider twisted bilayer graphene and show that one can tune the magic angles to be either larger or smaller, allowing in-situ experimental control of the phase diagram of this and other related materials. A waveguide allows one to circumvent the free-space constraints on the absence of longitudinal electric field components of light. We propose to place twisted bilayer graphene at a specific location at the exit of a waveguide, such that it is subjected to purely longitudinal components of a transverse magnetic modes (TM) wave.

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arXiv2019

Effective Floquet Hamiltonian in the low-frequency regime

We develop a theory to derive effective Floquet Hamiltonians in the weak drive and low-frequency regime. We construct the theory in analogy with band theory for electrons in a spatially-periodic and weak potential, such as occurs in some crystalline materials. As a prototypical example, we apply this theory to graphene driven by circularly polarized light of low intensity. We find an analytic expression for the effective Floquet Hamiltonian in the low-frequency regime which accurately predicts the quasienergy spectrum and the Floquet states. Furthermore, we identify self-consistency as the crucial feature effective Hamiltonians in this regime need to satisfy to achieve a high accuracy. The method is useful in providing a realistic description of off-resonant drives for multi-band solid state systems where light-induced topological band structure changes are sought.

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arXiv2019

Higher-order Floquet topological phases with corner and bulk bound states

We report the theoretical discovery and characterization of higher-order Floquet topological phases dynamically generated in a periodically driven system with mirror symmetries. We demonstrate numerically and analytically that these phases support lower-dimensional Floquet bound states, such as corner Floquet bound states at the intersection of edges of a two-dimensional system, protected by the nonequilibrium higher-order topology induced by the periodic drive. We characterize higher-order Floquet topologies of the bulk Floquet Hamiltonian using mirror-graded Floquet topological invariants. This allows for the characterization of a new class of higher-order "anomalous" Floquet topological phase, where the corners of the open system host Floquet bound states with the same as well as with double the period of the drive. Moreover, we show that bulk vortex structures can be dynamically generated by a drive that is spatially inhomogeneous. We show these bulk vortices can host multiple Floquet bound states. This "stirring drive protocol" leverages a connection between higher-order topologies and previously studied fractionally charged, bulk topological defects. Our work establishes Floquet engineering of higher-order topological phases and bulk defects beyond equilibrium classification and offers a versatile tool for dynamical generation and control of topologically protected Floquet corner and bulk bound states.

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arXiv2015

Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy

One-atom thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. In order to realize their potential it is necessary to isolate them from environmental disturbances in particular those introduced by the substrate. But finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy is exquisitely sensitive to potential fluctuations on both local and global length scales. Harnessing this technique we demonstrate that the insertion of an intermediate graphene layer provides superior screening of substrate induced disturbances, more than doubling the electronic mean free path. Furthermore, we find that the proximity of hBN acts as a nano-scale vacuum cleaner, dramatically suppressing the global potential fluctuations. This makes it possible to fabricate high quality devices on standard SiO2 substrates.

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arXiv2014

Ground state of graphene heterostructures in the presence of random charged impurities

We study the effect of long-range disorder created by charge impurities on the carrier density distribution of graphene-based heterostructures. We consider heterostructures formed by two graphenic sheets (either single layer graphene, SLG, or bilayer graphene, BLG) separated by a dielectric film. We present results for symmetric heterostructures, SLG-SLG and BLG-BLG, and hybrid ones, BLG-SLG. As for isolated layers, we find that the presence of charged impurities induces strong carrier density inhomogeneities, especially at low dopings where the density landscape breaks up in electron-hole puddles. We provide quantitative results for the strength of the carrier density inhomogeneities and for the screened disorder potential for a large range of experimentally relevant conditions. For heterostructures in which BLG is present we also present results for the band-gap induced by the perpendicular electric field generated self-consistently by the disorder potential and by the distribution of charges in the heterostructure. For SLG-SLG heterostructures we discuss the relevance of our results for the understanding of the recently observed metal-insulator transition in each of the graphene layers forming the heterostructure. Moreover, we calculate the correlation between the density profiles in the two graphenic layers and show that for standard experimental conditions the two profiles are well correlated.

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