SearcharxivSearch

arXiv subjects

Martin Schwade

Publications and source records attributed to Martin Schwade.

2 recordsLinked to original sources

Physics-informed Hamiltonian learning for large-scale optoelectronic property prediction

Predicting optoelectronic properties of large-scale atomistic systems under realistic conditions is crucial for rational materials design, yet computationally prohibitive with first-principles simulations. Recent neural network models have shown promise in overcoming these challenges, but typically require large datasets and lack physical interpretability. Physics-inspired approximate models offer greater data efficiency and intuitive understanding, but often sacrifice accuracy and transferability. Here we present HAMSTER, a physics-informed machine learning framework for predicting the quantum-mechanical Hamiltonian of complex chemical systems. Starting from an approximate model encoding essential physical effects, HAMSTER captures the critical influence of dynamic environments on Hamiltonians using only few explicit first-principles calculations. We demonstrate our approach on halide perovskites, achieving accurate prediction of optoelectronic properties across temperature and compositional variations, and scalability to systems containing tens of thousands of atoms. This work highlights the power of physics-informed Hamiltonian learning for accurate and interpretable optoelectronic property prediction in large, complex systems.

cond-mat.mtrl-sci

Temperature-transferable tight-binding model using a hybrid-orbital basis

Finite-temperature calculations are relevant for rationalizing material properties yet they are computationally expensive because large system sizes or long simulation times are typically required. Circumventing the need for performing many explicit first-principles calculations, tight-binding and machine-learning models for the electronic structure emerged as promising alternatives, but transferability of such methods to elevated temperatures in a data-efficient way remains a great challenge. In this work, we suggest a tight-binding model for efficient and accurate calculations of temperature-dependent properties of semiconductors. Our approach utilizes physics-informed modeling of the electronic structure in form of hybrid-orbital basis functions and numerically integrating atomic orbitals for the distance dependence of matrix elements. We show that these design choices lead to a tight-binding model with a minimal amount of parameters which are straightforwardly optimized using density functional theory or alternative electronic-structure methods. Temperature-transferability of our model is tested by applying it to existing molecular-dynamics trajectories without explicitly fitting temperature-dependent data and comparison to density functional theory. We utilize it together with machine-learning molecular dynamics and hybrid density functional theory for the prototypical semiconductor gallium arsenide. We find that including the effects of thermal expansion on the onsite terms of the tight-binding model is important in order to accurately describe electronic properties at elevated temperatures in comparison to experiment.

cond-mat.mtrl-sci