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Maryam Rahimi

Publications and source records attributed to Maryam Rahimi.

8 recordsLinked to original sources

Layer-wise Positional Bias in Short-Context Language Modeling

Transformer language models systematically prefer tokens at specific input positions regardless of semantic relevance---a phenomenon known as positional bias. Prior work characterizes this bias in model behavior through performance drops in long-context tasks or in model architecture through attention-based analyses. However, it remains unmeasured how input positions actually drive predictions layer by layer. We introduce a layer conductance framework within a sliding-window design, applied to short-context next-word prediction to isolate model-internal behavior from task and context-window pressure. The resulting layer-wise positional importance profiles are stable across diverse texts and lexical scrambling, confirming they reflect model-internal structure. Characterizing how these profiles evolve across depth, we find recency bias increases monotonically while primacy bias is subtle and diminishes. We also find that this positional bias is not uniform across word types: function words exhibit higher recency bias while content words show higher primacy bias.

cs.CL

Explanations of Large Language Models Explain Language Representations in the Brain

Large Language Model (LLM) representations are known to align with brain activity during language processing, but it remains unclear what drives this alignment. We test whether explainable AI (XAI) can help answer this: using attribution methods, we quantify the contribution of each input word to an LLM's next-word predictions and use these explanations to predict fMRI data from participants listening to narratives. We find that gradient-based attribution methods robustly align with brain activity, contribute unique variance beyond acoustic and word-rate confounds, and outperform internal representations in early auditory regions. Using conductance, we extend attribution from words to individual layers, asking what each layer's attribution reveals about the model's computation and how this relates to its brain alignment. Early layers show greater word-type sensitivity and align preferentially with auditory regions, whereas the final layer's attribution is dominated by positional information and exhibits broad cortical alignment. Together, these findings demonstrate that attribution-based explanations can be used not only to measure LLM--brain alignment but to characterize what it reflects.

cs.CL

Reliability of Numerical Solutions in Transient Chaos

In dealing with nonlinear systems, it is common to use numerical solutions. Unlike the careful behavior towards the numerical results in chaotic regions, the validity of numerical results in regions of transient chaos might not always be taken into consideration. This article demonstrates that using numerical methods to solve systems undergoing transient chaos can be challenging and sometimes unreliable. To illustrate this issue, we use the Lorenz system [1] in the region of transient chaos as an example. We show how the result of the computation might completely change when using different mathematically equivalent expressions. This raises the question of which result should be relied on. To answer this question, we propose a method based on the Lyapunov exponent to determine the reliability of the numerical solution and apply it to the provided example. In fact, this method checks a necessary condition for the validity of the numerical solution. Then, by increasing the precision to the extent suggested by our method, we show that the result of our studied case passes this test. In the end, we briefly discuss the scope and limits of our method.

math.DS

Coherent back-scattering near the two-dimensional metal-insulator transition

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

cond-mat.str-el

Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

We have accurately measured the effective mass in a dilute two-dimensional electron system in silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density has been observed. Using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories.

cond-mat.str-el

Compressibility of a two-dimensional hole gas in tilted magnetic field

We have measured compressibility of a two-dimensional hole gas in p-GaAs/AlGaAs heterostructure, grown on a (100) surface, in the presence of a tilted magnetic field. It turns out that the parallel component of magnetic field affects neither the spin splitting nor the density of states. We conclude that: (a) g-factor in the parallel magnetic field is nearly zero in this system; and (b) the level of the disorder potential is not sensitive to the parallel component of the magnetic field.

cond-mat.str-el

"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors ν=1 and 2 and, for the first time, between ν=2 and 3 and between ν=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behavior in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character.

cond-mat.str-el

Fate of the extended states in a vanishing magnetic field: the role of spins in strongly-interacting 2D electron systems

In non-interacting or weakly-interacting 2D electron systems, the energy of the extended states increases as the perpendicular magnetic field approaches zero: the extended states "float up" in energy, giving rise to an insulator. However, in those 2D systems where metallic conductivity has been recently observed in zero magnetic field, the energy of the extended states remains constant or even decreases as B -> 0, thus allowing conduction in the limit of zero temperature. Here we show that aligning the electrons' spins causes the extended states to once more "float up" in energy in the vanishing perpendicular magnetic field, as they do for non- or weakly-interacting electrons. The difference between extended states that float up (an insulator) or remain finite (a metal) is thus tied to the existence of the spins.

cond-mat.str-el