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Masahiro Shimizu

Publications and source records attributed to Masahiro Shimizu.

2 recordsLinked to original sources

Microscopic mechanism of structural and volume relaxation below glass transition temperature in a soda-lime silicate glass revealed by Raman spectroscopy and its first principle calculations

To elucidate the atomistic origin of volume relaxation in soda-lime silicate glass annealed below the glass transition temperature (Tg), the experimental and calculated Raman spectra were compared. By decomposing the calculated Raman spectra into a specific group of atoms, we found that the Raman peak at 1050 cm-1 corresponds to bridging oxygen with a small Si-O-Si bond angle. The experimental Raman spectra indicated that, during annealing below Tg, a homogenization reaction Q2+Q4->2Q3 proceeds in the early stage of structural relaxation. Then, the Si-O-Si units with relatively small angles decrease even in the later stages, which is first evidence of ring deformation causing volume relaxation of soda-lime silicate glass because decreasing small Si-O-Si angles corresponds to the reduce of acute O-O-O angle in a ring and can expand the space inside the rings, and Na can be inserted into the ring center. In conclusion the ring deformation and Na displacement is the origin of the volume relaxation of soda-lime silicate glass below Tg.

cond-mat.mtrl-sci

Ultra-high temperature Soret effect in a silicate melt: SiO2 migration to cold side

The Soret effect, temperature gradient driven diffusion, in silicate melts has been investigated intensively in the earth sciences from the 1980s. The SiO2 component is generally concentrated in the hotter region of silicate melts under a temperature gradient. Here, we report that at ultra-high temperatures above approximately 3000 K, SiO2 becomes concentrated in the colder region of the silicate melts under a temperature gradient. The interior of an aluminosilicate glass (63.3SiO2-16.3Al2O3-20.4CaO(mol%)) was irradiated with a 250 kHz femtosecond laser pulse for local heating. SiO2 migrated to the colder region during irradiation with an 800 pulse (3.2 ms irradiation). The temperature analysis indicated that migration to the colder region occurred above 3060 K. In the non-equilibrium molecular dynamics (NEMD) simulation, SiO2 migrated to the colder region under a temperature gradient, which had an average temperature of 4000 K; this result supports the experimental result. On the other hand, SiO2 exhibited a tendency to migrate to the hotter region at around 2400 K in both the NEMD and experimental study. The second-order like phase transition was observed at ~2000-3400 K when calculated using MD without a temperature gradient. Therefore, the second-order phase transition could be related to the migration of SiO2 to colder region. However, the detailed mechanism has not been elucidated.

physics.chem-ph