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Masakazu Aono

Publications and source records attributed to Masakazu Aono.

4 recordsLinked to original sources

Decision Maker based on Atomic Switches

We propose a simple model for an atomic switch-based decision maker (ASDM), and show that, as long as its total volume of precipitated Ag atoms is conserved when coupled with suitable operations, an atomic switch system provides a sophisticated "decision-making" capability that is known to be one of the most important intellectual abilities in human beings. We considered the multi-armed bandit problem (MAB); the problem of finding, as accurately and quickly as possible, the most profitable option from a set of options that gives stochastic rewards. These decisions are made as dictated by each volume of precipitated Ag atoms, which is moved in a manner similar to the fluctuations of a rigid body in a tug-of-war game. The "tug-of-war (TOW) dynamics" of the ASDM exhibits higher efficiency than conventional MAB solvers. We show analytical calculations that validate the statistical reasons for the ASDM dynamics to produce such high performance, despite its simplicity. These results imply that various physical systems, in which some conservation law holds, can be used to implement efficient "decision-making objects." Efficient MAB solvers are useful for many practical applications, because MAB abstracts a variety of decision-making problems in real- world situations where an efficient trial-and-error is required. The proposed scheme will introduce a new physics-based analog computing paradigm, which will include such things as "intelligent nano devices" and "intelligent information networks" based on self-detection and self-judgment.

cs.AI

Benchtop Fabrication of Memristive Atomic Switch Networks

Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.

cond-mat.mtrl-sci

Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In

Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. $I-V$ characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density $J_\mathrm{2D,c}$ is estimated to be as high as $1.8 \ \mathrm{A/m}$ at 1.8 K. The temperature dependence of $J_\mathrm{2D,c}$ indicates that the surface atomic steps play the role of strongly coupled Josephson junctions.

cond-mat.mes-hall

Sudden Suppression of Electron-Transmission Peaks in Finite-Biased Nanowires

Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model consisting of square prisms, and clarify the detailed mechanism of the occurrence of NDC phenomenon in terms of the changes of local density of states upon applying bias voltages to the electrodes. Boosting up bias voltages, we observe sudden suppression of transmission peaks which results in NDC behavior in the current-voltage characteristic. This suppression is explained by the fact that when the bias voltage exceeds a certain threshold, the conduction channels contributing to the current flow are suddenly closed up to deny the electron transportation.

cond-mat.mtrl-sci