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Masaki Kobayashi

Publications and source records attributed to Masaki Kobayashi.

At least 19 recordsLinked to original sources

Contextual Bandit-Based Decomposition of Network Slice Requirements under Cumulative Resource Budget Constraints

End-to-end (E2E) network slices (NSs) are provisioned across multiple domains of the 5G network. In hierarchical NS management, a tenant submits a network slice request (NSR), which specifies E2E service level agreement (SLA) requirements. Rather than managing these domains directly, an E2E controller decomposes each NSR into domain-level SLA requirements and delegates resource allocation to domain-specific controllers, which return feasibility and resource-consumption feedback. A poor decomposition policy can therefore cause rejection of the current request by producing infeasible requirements or reduce future admission opportunities by concentrating resource consumption in bottleneck domains. We call this decomposition-policy optimization problem the network slice request decomposition problem (NSR-DP). For practical operation, online approaches to NSR-DP have been proposed. Such approaches must jointly meet two requirements: (R1) control long-term resource budgets and (R2) adapt each decomposition to the performance targets and guarantee levels specified in the arriving NSR's SLA. To meet these requirements, we introduce contextual constrained kernel bandits (CCKB) as an online solution for NSR-DP. To address (R1), CCKB raises penalties for using resources that become tight, thereby discouraging decompositions that consume bottleneck resources. To address (R2), it uses Gaussian processes (GPs) to predict, for the current NSR, the reward and resource usage of candidate decompositions, allowing it to select a decomposition suited to the performance targets and guarantee levels. We establish high-probability guarantees for the resulting formulation and show through extensive 5G simulations across topology, bottleneck, and traffic-mixture settings that CCKB outperforms the baselines in the large majority of conditions.

cs.NI

Oxygen-induced Fe surface segregation at the $L1_0$-FePd(001)/graphene heterointerface for spintronics devices: a first-principles study

We theoretically investigate the atomic-scale structure of the heterointerface formed between the (001) surface of the $L1_0$-ordered iron palladium (FePd) intermetallic alloy and graphene (Gr), namely, $L1_0$-FePd(001)/Gr, which serves as an essential component in spintronic devices. Using density functional theory (DFT) calculations, we demonstrate that the topmost surface layer consisting of Pd (Pd-terminated surface) is energetically more stable than that consisting of Fe in vacuum, and that Pd-terminated surfaces are unfavorable for graphene adsorption. In contrast, under an oxygen atmosphere, the strong Fe--O bonding stabilizes Fe-terminated surfaces. The predicted Fe--O bonds on the oxidized surface are consistent with our X-ray photoelectron spectroscopy (XPS) measurements. These results reproduce the mechanism responsible for the graphene coverage observed in recent experiments. Similar oxygen-induced Fe surface segregation has been studied in heterogeneous catalysis on FePt and FePd alloys. In this work, we exploit this mechanism as a termination-engineering strategy to fabricate high-quality 2D-material/alloy heterointerfaces for nanoscale device applications.

cond-mat.mtrl-sci

Coexistence of Donor and Acceptor Hydrogen States in n-Type InN

Hydrogen often exhibits amphoteric behavior in semiconductors, but its role is in n-type InN remains unresolved. Wurtzite InN is a narrow-gap semiconductor with high electron mobility and is therefore attractive for high-speed electronics and optoelectronic applications. Here we use hard x-ray photoemission spectroscopy (HAXPES) to probe hydrogen-related electronic structure in as-grown and post-annealed InN thin films prepared at different grown temperatures. Post annealing, which reduces the concentration of hydrogen impurities in the films, shifts the core-level spectra toward lower binding energy, consistent with a chemical-potential shift associated with the passivation of electron carriers. In the valence-band spectra, an acceptor-like in-gap feature near the valence-band maximum is suppressed after annealing. Together with the established donor-like behavior of hydrogen in InN, these results suggest that acceptor H- states coexist with donor H+ states in InN. The coexistence of these opposite hydrogen charge states provides a microscopic picture of hydrogen-driven compensation in InN and highlights the amphoteric nature of hydrogen even in a highly n-type semiconductor.

cond-mat.mtrl-sci

Intrinsic low-spin state and strain-tunable anomalous Hall scaling in high-quality SrRuO3 (111) films

The (111)-oriented 4d ferromagnetic perovskite SrRuO3 (SRO) offers a unique triangular-lattice geometry, making it a promising platform for exploring Berry-curvature-driven and spin-orbit-coupled transport. Here, we present a systematic study of the structure, magnetism, and magnetotransport of high-quality SRO (111) thin films with thicknesses t = 1.2-60 nm grown on SrTiO3 (111) substrates by machine-learning-assisted molecular beam epitaxy. We achieved a residual resistivity ratio of 45.5 in a 60 nm-thick film, the highest reported for this orientation, enabling access to intrinsic electronic and magnetic behavior. Temperature-dependent resistivity confirms Fermi-liquid transport below 15 K in both coherently strained (t = 10, 20 nm) and strain-relaxed (t = 60 nm) films, thereby enabling detailed magnetotransport and magnetic measurements. The linear, non-saturating positive magnetoresistance persists up to 14 T, while Hall-effect measurements and temperature scaling separate intrinsic (Karplus-Luttinger) and extrinsic (side-jump) contributions to the anomalous Hall effect, with the relative weight tuned by (111) epitaxial strain. X-ray magnetic circular dichroism at the Ru M2,3 and O K edges, together with SQUID magnetometry, demonstrates an intrinsically low-spin Ru ground state for both coherently strained and relaxed films, resolving ambiguities among prior reports. These detailed crystalline, electrical, and magnetic characterizations provide a rigorous foundation for understanding and engineering quantum transport in SRO (111).

cond-mat.mtrl-sci

Epitaxial lift-off of La$_{2/3}$Sr$_{1/3}$MnO$_3$ membranes enabled by BaO sacrificial layers and restoration of the Curie temperature

Ultrathin complex-oxide membranes provide a powerful platform for strain engineering, interfacial control, and heterogeneous integration; however, their formation remains constrained by the availability and performance of suitable water-soluble sacrificial layers. This letter demonstrates that barium oxide (BaO) serves as a highly efficient and rapidly dissolving water-soluble sacrificial layer, enabling the epitaxial lift-off and transfer of ultrathin La$_{2/3}$Sr$_{1/3}$MnO$_3$ (LSMO) membranes onto SiO$_x$/Si substrates. LSMO membranes with a thickness of approximately 8 nm are released using a BaO sacrificial layer grown by molecular beam epitaxy, while high crystallinity is preserved and Ba interdiffusion is limited to a narrow interfacial region of approximately 0.5 nm. Post-transfer oxygen annealing at 600 ${}^\circ$C increases the Curie temperature ($T_C$) from 342 K to 346 K by eliminating Mn$^{2+}$ states associated with oxygen vacancies generated through oxygen extraction into the BaO layer. These results show that BaO provides a fast, scalable, and compositionally simple route for complex-oxide membrane release, while brief oxygen annealing is essential to restore the optimal Mn valence state and achieve the intrinsic high $T_C$.

cond-mat.mtrl-sci

Orbital-resolved anisotropic electron pockets in electron-doped SrTiO3 observed by ARPES

SrTiO3 has attracted considerable interest as a wide-band gap semiconductor for advanced high-k capacitors and photocatalytic applications. Although previous angle-resolved photoemission spectroscopy (ARPES) studies have characterized the valence band structure originating from O 2p orbitals, the conduction band arising from Ti 3d orbitals upon electron doping, which is called electron pockets, remain poorly understood. In this study, polarization-dependent ARPES measurements were performed on Nb 1%-doped SrTiO3 (001), enabling direct, orbital-selective visualization of the electron pockets. From the measured band dispersion, we quantitatively determined their effective masses, anisotropy, and electron density. Our results revealed formation of an electron pocket at the Gamma point induced by Nb doping, yielding a direct bandgap of 3.79 eV at Gamma, consistent with previous optical measurements. Furthermore, the effective masses of m1 = 0.63m0 (short-axis direction) and m2 = 8.0m0 (long-axis direction) were identified, where m0 is the free electron mass, and the Fermi surface has been shown to be ellipsoidal. The electron density derived from these dispersions was found to be 3.58e20 cm-3. These findings provide a comprehensive picture of the conduction-band electronic structure that will be crucial in the design of STO-based functional devices.

cond-mat.mtrl-sci

Magnetic anisotropy related to hybridization between Fe 3$d$ and As 4$p$ orbitals in a bcc Fe-As thin film

The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc Fe$_{1-x}$As$_x$ (Fe-As) with the in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe-As thin film have been investigated by Xray magnetic circular dichroism (XMCD) and magnetic circular dichroism in hard X-ray photoemission spectroscopy (MCD-HAXPES) to elucidate the role of As ions in the IMA. The XMCD spectra at the Fe $L_{2,3}$ edge and MCD-HAXPES spectra of the Fe 2$p$ core level exhibit ferromagnetic and metallic features like Fe metal. The XMCD at the As $L_{2,3}$ edge demonstrates that the As ions contribute to the ferromagnetism of bcc Fe-As through the hybridization between the Fe 3$d$ and As 4$p$ orbitals. The estimations of the magnetic moments of Fe using the XMCD sum rules have revealed that the orbital magnetic moment is isotropic and the magnetic dipole term is anisotropic. The anisotropy of the magnetic dipole term can be attributed to the anisotropic $p-d$ hybridization due to epitaxial strain, contributing to the IMA of bcc Fe-As. Our findings enlighten the mechanism of the MA of the non-magnetic ion-doped bcc Fe thin film, which can be applied to other magnetic 3$d$ transition metal thin films doped with non-magnetic elements.

cond-mat.mtrl-sci

Single monolayer ferromagnetic perovskite SrRuO3 with high conductivity and strong ferromagnetism

Achieving robust ferromagnetism and high conductivity in atomically thin oxide materials is critical for advancing spintronic technologies. Here, we report the growth of a highly conductive and ferromagnetic single monolayer SrRuO3 having a high Curie temperature of 154 K on DyScO3 110 substrates. The SrTiO3 capping layer effectively suppresses surface reactions, which typically hinder ferromagnetism in atomically thin films. X ray absorption spectroscopy and X ray magnetic circular dichroism measurements revealed strong orbital hybridization between Ru 4d and O 2p orbitals in the SRO monolayer, which contributes to enhancement of the conductivity and ferromagnetic ordering of both the Ru 4d and O 2p orbitals. The resistivity of the single monolayer SrRuO3 on the better lattice matched DyScO3 substrate is approximately one-third of that of previously reported single monolayer SrRuO3 grown on an SrTiO3 substrate. This study highlights the potential of monolayer SrRuO3 as a platform for two dimensional magnetic oxide systems, offering new opportunities for the eploration of spintronic devices and quantum transport phenomena.

cond-mat.mtrl-sci

Correlated Ligand Electrons in the Transition-Metal Oxide SrRuO$_3$

In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectroscopy. The observations demonstrate that the O 2p PDOS is distorted from that predicted by first-principles calculations than the Ru 4d PDOS. The results indicate that the electron correlation in the ligand orbitals will be important to understand the electronic structure of the p-d hybridized state in strongly correlated electron systems, even with topological states.

cond-mat.str-el

Identification of electronic dimensionality reduction in semiconductor quantum well structures

Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES). In semiconductor films (heterostructures), quantum well (QW) states arise due to electron/hole accumulations at the surface (interface). The quantized states due to quantum confinement can be observed by VUV-ARPES, while the periodic intensity modulations along the surface normal (kz) direction of these quantized states are also observable by varying incident photon energy, resembling three-dimensional (3D) band dispersion. We have conducted soft X-ray (SX) ARPES measurements on thick and ultrathin III-V semiconductor InSb(001) films to investigate the electronic dimensionality reduction in semiconductor QWs. In addition to the dissipation of the kz dispersion, the SX-ARPES observations demonstrate the changes of the symmetry and periodicity of the Brillouin zone in the ultrathin film as 2D QW compared with these of the 3D bulk one, indicating the electronic dimensionality reduction of the 3D bulk band dispersion caused by the quantum confinement. The results provide a critical diagnosis using SX-ARPES for the dimensionality reduction in semiconductor QW structures.

cond-mat.mtrl-sci

SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties

The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices.

cond-mat.mtrl-sci

Mechanism of ferromagnetism enhancement in a La$_{2/3}$ Sr$_{1/3}$ MnO$_3$ membrane released from epitaxial strain

Recent studies have shown that the magnetic properties of the ferromagnetic perovskite oxide La$_{2/3}$ Sr$_{1/3}$ MnO$_3$ (LSMO) grown on an SrTiO3 (STO) substrate, such as its magnetic moment and Curie temperature, can be improved by releasing the film from the substrate. However, the microscopic origin of this enhancement is not yet well understood. In this study, we use synchrotron radiation measurements to investigate the mechanism of ferromagnetism enhancement in an LSMO membrane released from an STO substrate by dissolving a water-soluble Sr$_4$Al$_2$O$_7$ buffer layer. Using resonant photoemission spectroscopy on the as-grown LSMO film and LSMO membrane, we elucidate that the strain release from the STO substrate enhances the itineracy of the Mn-3d electrons via p-d hybridization, and this strengthens the double-exchange interaction. The reinforcement of the double-exchange interaction, in turn, improves the ferromagnetism of LSMO.

cond-mat.mtrl-sci

Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by irradiation of focused ion beam

Diamond-type structure allotrope α-Sn is attracting much attention as a topological Dirac semimetal (TDS). In this study, we demonstrate that α-Sn undergoes a phase transition to another allotrope β-Sn with superconductivity at low temperature by irradiating with a focused Ga ion beam (FIB). To clarify the transition mechanism, we performed X-ray photoemission spectroscopy (XPS) measurements on an α-Sn thin film irradiated with FIB and an as-grown α-Sn thin film. The XPS results suggest that the local annealing, which is one of the side effects of FIB, causes the transformation from α-Sn into β-Sn. Furthermore, the difference in the chemical states between α-Sn and β-Sn can be quantitatively explained by the crystal structures rather than the degree of metallicity reflecting the conductivity. These results propose a new way of fabricating TDS/superconductor in-plane heterostructures based on α-Sn and β-Sn.

cond-mat.mtrl-sci

Magnetic anisotropy driven by ligand in 4d transition metal oxide SrRuO3

The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic anisotropy. Here, we introduce the concept of ligand driven magnetic anisotropy in a complex transition-metal oxide. We conducted X ray absorption and X ray magnetic circular dichroism spectroscopies at the Ru and O edges in the 4d ferromagnetic metal SrRuO3. Systematic variation of the sample thickness in the range below 10 nm allowed us to control the localization of Ru 4d t2g states, which affects the magnetic coupling between the Ru and O ions. We found that the orbital magnetization of the ligand induced via hybridization with the Ru 4d orbital determines the magnetic anisotropy in SrRuO3.

cond-mat.mtrl-sci

Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures

Superconductor/topological material heterostructures are intensively studied as a platform for topological superconductivity and Majorana physics. However, the high cost of nanofabrication and the difficulty of preparing high-quality interfaces between the two dissimilar materials are common obstacles that hinder the observation of intrinsic physics and the realisation of scalable topological devices and circuits. Here, we demonstrate an innovative method to directly draw nanoscale superconducting beta-tin (beta-Sn) patterns of any shape in the plane of a topological Dirac semimetal (TDS) alpha-tin (alpha-Sn) thin film by irradiating a focused ion beam (FIB). We utilise the property that alpha-Sn undergoes a phase transition to superconducting beta-Sn upon heating by FIB. In beta-Sn nanowires embedded in a TDS alpha-Sn thin film, we observe giant non-reciprocal superconducting transport, where the critical current changes by 69% upon reversing the current direction. The superconducting diode rectification ratio reaches a maximum when the magnetic field is applied parallel to the current, distinguishing itself from all the previous reports. Moreover, it oscillates between alternate signs with increasing magnetic field strength. The angular dependence of the rectification ratio on the magnetic field and current directions is similar to that of the chiral anomaly effect in TDS alpha-Sn, suggesting that the non-reciprocal superconducting transport may occur at the beta-Sn/alpha-Sn interfaces. The ion-beam patterned Sn-based superconductor/TDS planar structures thus show promise as a universal platform for investigating novel quantum physics and devices based on topological superconducting circuits of any shape.

cond-mat.supr-con

Imaging emergent exotic quasiparticle state in a frustrated transition metal oxide

The existence of rich Fermiology in anomalous metal phase in exotic superconductors has attracted considerable interests, as exemplified in copper, iron-based, and intermetallic frustrated kagome-based compounds. A common feature in these cases is pseudo-gap opening or long-range lattice/electronic ordering above superconducting critical temperature Tc. As yet developed area is the potential existence of exotic Fermiology in superconducting transition metal oxides on a geometrically frustrated lattice. Here, we focus on the spinel oxide superconductor LiTi2O4, which can be viewed as the hole-doped side of the orbital ordered 3d1 Mott system on the Ti-derived pyrochlore frustrated network. By the in-situ combination of angle-resolved photoemission spectroscopy (ARPES) and epitaxial thin film growth, we discovered the abrupt flattening of near Fermi energy dispersion below the characteristic temperature T* ~ 150 K. While the emergent negative thermal expansion below T* strongly supports a distinct phase at low-temperature, absence of energy gap opening, splitting/folding of bands, nor long-range lattice distortion are seen across T*. We propose that the competition between growing instability towards orbital ordering and its inherent geometric frustration in the Ti-pyrochlore network results in a new quantum state of matter with robust high entropic nature below T*. Our findings collectively point to a unique Fermiology in frustrated three-dimensional transition metal oxides, and its connection to superconductivity below Tc is open as an interesting future challenge. Also, a potential guideline is unexpectedly provided for designing zero thermal expansion metal to develop future solid-state devices.

cond-mat.supr-con

$synapse$: interactive support on photoemission spectroscopy measurement and analysis for non-expert users

Photoemission spectroscopy, an experimental method based on the photoelectric effect, is now an indispensable technique used in various fields such as materials science, life science, medicine, and nanotechnology. However, part of the experimental process of photoemission spectroscopy relies on experience and intuition, which is difficult to understand for novice users. In particular, photoemission spectroscopy experiments using high-brilliance synchrotron radiation as a light source are not easy for novice users because the measurements must be performed quickly and accurately as scheduled within a limited experimental period. In addition, research on the application of information science methods to quantum data measurement, such as photoemission spectroscopy, is mainly aimed at the development of analysis methods, and few attempts have been made to clarify the problems faced by users who lack experience. In this study, we identified the problems faced by novice users of photoemission spectroscopy, implemented a native application with functions to solve these problems, and evaluated it qualitatively and quantitatively. This paper describes the contents of the field study and interview survey, the functional design and implementation of the application based on our field study and interview survey, and the results and discussion of the evaluation experiment.

cond-mat.mtrl-sci

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too.

cond-mat.str-el