arXiv subjects

Masaki Nakano

Publications and source records attributed to Masaki Nakano.

15 recordsLinked to original sources

arXiv2026

Thermally quenched metastability in metal-insulator transitions via elemental substitution

Thermal quenching inhibits equilibration toward the thermodynamic ground state during phase transitions, revealing metastable phases such as structural glasses and quenched alloys. Whether such thermally quenched metastability can be realized in metal-insulator transitions has remained an open question because these transformations are governed by collective electronic reorganization rather than atomic diffusion. We demonstrate that rapid cooling exceeding 10$^9$ K s$^{-1}$ kinetically avoids the metal-insulator transition, stabilizing a long-lived metastable metallic phase in tungsten-substituted VO$_2$. Temperature-dependent relaxation reveals nucleation-dominated kinetics with a thermal activation barrier introduced by tungsten substitution. Our results establish elemental substitution as a route to thermally quenched metastability in metal-insulator transitions, expanding metastable phase control to electronic phases.

cond-mat.str-el↗

arXiv2026

Carrier-tunable RKKY magnetism in a crystalline magnet

In itinerant magnets governed by the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, the exchange coupling depends on both the moment-moment distance $r$ and the Fermi wavevector $k_{\mathrm{F}}$, yet in bulk synthesis the two are tightly coupled: a change in composition typically alters both. Here, we use a thin-film approach to tune these two variables independently in a single crystalline host. Using molecular-beam epitaxy (MBE), we stabilize either $2\times2\mathrm{R}0^\circ$ Cr$_{1/4}$NbSe$_2$ or $\sqrt{3}\times\sqrt{3}\mathrm{R}30^\circ$ Cr$_{1/3}$NbSe$_2$ within the same NbSe$_2$ host through separate growth windows. Controlled post-growth annealing performed across a series of temperatures then modifies the carrier density while leaving the Cr superstructure intact below a structural-transition threshold. The two as-grown phases are distinct in electronic structure, magnetic ground state, and transport. Along this annealing series, the Hall response evolves systematically while the magnetic response changes in a structurally insensitive manner, with ferromagnetic order emerging within the same $\sqrt{3}\times\sqrt{3}\mathrm{R}30^\circ$ structural class only above a critical annealing temperature, experimentally disentangling carrier density and moment geometry. The Hall magnitude and sign evolution point to a low-carrier-density system in which $k_{\mathrm{F}}$ is susceptible to modest external tuning. Cr-NbSe$_2$ thus realizes carrier-sensitive RKKY magnetism in a single crystalline host, within an MBE-plus-annealing approach extensible across the intercalated transition-metal dichalcogenide family.

cond-mat.str-el↗

arXiv2026

Magnetic order and excitations in the magnetically intercalated van der Waals material Cr$_{\frac{1}{4}}$NbSe$_2$

Cr$_{\frac{1}{4}}$NbSe$_2$ is a triangular lattice magnet in which magnetic Cr$^{3+}$ ions are intercalated to form triangular lattices between NbSe$_2$ van der Waals layers stacked along the c axis. By unpolarized and polarized neutron scattering experiments, we have revealed that the magnetic ground state of this system is a 120$^{\circ}$-type antiferromagnetic order characterized by the magnetic propagation wave vector of $q=(\frac{1}{3}, \frac{1}{3}, 0)$. We also performed inelastic neutron scattering measurements using co-aligned single crystals, and determined dispersion relations of magnetic excitations at low temperatures. Comparing the observed spectra with calculations based on the linear spin-wave theory, we revealed that the out-of-plane ferromagnetic interaction is fairly strong as compared to the in-plane nearest neighbor antiferromagnetic interaction. Although the crystal structure of this system is composed of two-dimensional van der Waals layers, the magnetic order has a three dimensional character, which would be attributed to long-range magnetic interactions mediated by conduction electrons.

cond-mat.str-el↗

arXiv2023

Gate-tunable ferromagnetism in a van der Waals magnetic semimetal

Magnetic semimetals form an attractive class of materials because of the non-trivial contributions of itinerant electrons to magnetism. Due to their relatively low-carrier-density nature, a doping level of those materials could be largely tuned by a gating technique. Here we demonstrate gate-tunable ferromagnetism in an emergent van der Waals magnetic semimetal Cr3Te4 based on an ion-gating technique. Upon doping electrons into the system, the Curie temperature (TC) sharply increases, approaching near to room temperature, then decreases to some extent. Interestingly, this non-monotonous variation of TC accompanies the switching of the magnetic anisotropy. Furthermore, such evolutions of TC and anisotropy occur synchronously with the sigh changes of the ordinary and anomalous Hall effects. Those results clearly elucidate that the magnetism in Cr3Te4 should be governed by its semimetallic band nature, where the band crossing points play a crucial role both for the magneto-transport properties and magnetism itself.

cond-mat.mtrl-sci↗

arXiv2022

Signature of topological band crossing in ferromagnetic Cr1/3NbSe2 epitaxial thin film

In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental evidence of the Weyl crossing shows Cr1/3NbSe2 to be a topological ferromagnet. This work highlights I-TMDC as platform towards the interplay of magnetic and topological physics in low-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2022

Spontaneous spin-valley polarization in NbSe2 at a van der Waals interface

A proximity effect at a van der Waals (vdW) interface enables creation of an emergent quantum electronic ground state. Here we demonstrate that an originally-superconducting two-dimensional (2D) NbSe2 forms a ferromagnetic ground state with spontaneous spin polarization at a vdW interface with a 2D ferromagnet V5Se8. We investigated the anomalous Hall effect (AHE) of the NbSe2/V5Se8 magnetic vdW heterostructures, and found that the sign of the AHE was reversed as the number of the V5Se8 layer was thinned down to the monolayer limit. Interestingly, the AHE signal of those samples was enhanced with the in-plane magnetic fields, suggesting an additional contribution to the AHE signal other than magnetization. This unusual behavior is well reproduced by band structure calculations, where the emergence of the Berry curvature along the spin-degenerate nodal lines in 2D NbSe2 by the in-plane magnetization plays a key role, unveiling a unique interplay between magnetism and Zeeman-type spin-orbit interaction in a non-centrosymmetric 2D quantum material.

cond-mat.mes-hall↗

arXiv2019

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

cond-mat.mtrl-sci↗

arXiv2018

Signatures of charge-order correlations in transport properties of electron-doped cuprate superconductors

The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in electron-doped cuprates suggest that charge correlations should also play an important role on the electronic states of cuprates, although those correlations have been so far detected mainly by x-ray scattering measurements. Here we show signatures of CO correlations in transport properties of electron-doped cuprates as anomalous enhancement of the metal-to-insulator crossover temperature (Tmin) appears in the limited doping range near the onset of superconductivity, while it decreases exactly when superconductivity sets in. We explain this non-monotonous peak-like behavior of Tmin in terms of the evolution of the electronic states through development of CO correlations and appearance of the hole pockets in the folded Fermi surface, which impact on transport properties consecutively at different locations in the momentum space.

cond-mat.str-el↗

arXiv2017

Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy

Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics. For two-dimensional (2D) materials, however, main fabrication routes have been mechanical exfoliation and chemical-vapor deposition by making good use of weak van der Waals bonding nature between neighboring layers, and MBE growth of 2D materials, in particular on insulating substrates for transport measurements, has been limited despite its fundamental importance for future advanced research. Here we report layer-by-layer epitaxial growth of scalable transition-metal dichalocogenide (TMDC) thin films on insulating substrates by MBE, and demonstrate ambipolar transistor operation. The proposed growth protocol is broadly applicable to other TMDC, providing a key milestone toward fabrication of van der Waals heterostructures with various 2D materials for novel properties and functionalities.

cond-mat.mtrl-sci↗

arXiv2015

Memristive phase switching in two-dimensional crystals

Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significantly changed from bulk systems. However, there are few attempts to realize novel phenomena in correlated 2D crystals. Here, we report memristive phase switching in nano-thick crystals of 1T-type tantalum disulfide (1T-TaS2), a first-order phase transition system. The ordering kinetics of the phase transition was revealed to become extremely slow as the thickness is reduced, resulting in an emergence of metastable states. Furthermore, we realized the unprecedented memristive switching to multi-step non-volatile states by applying in-plane electric field. The reduction of thickness is essential to achieve such non-volatile electrical switching behavior. The thinning-induced slow kinetics possibly makes the various metastable states robust and consequently realizes the non-volatile memory operation. The present result indicates that 2D crystal with correlated electrons is a novel nano-system to explore and functionalize multiple metastable states which are inaccessible in its bulk form.

cond-mat.mtrl-sci↗

arXiv2013

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

cond-mat.supr-con↗

arXiv2013

Single-Crystal Organic Charge-Transfer Interfaces probed using Schottky-Gated Heterostructures

Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Schottky-gated heterostructures to probe the conducting layer at the interface between rubrene and PDIF-CN2 single crystals. Gate-modulated conductivity measurements demonstrate that interfacial transport is due to electrons, whose mobility exhibits band-like behavior from room temperature to ~ 150 K, and remains as high as ~ 1 cm2V-1s-1 at 30 K for the best devices. The electron density decreases linearly with decreasing temperature, an observation that can be explained quantitatively based on the heterostructure band diagram. These results elucidate the electronic structure of rubrene-PDIF-CN2 interfaces and show the potential of Schottky-gated organic heterostructures for the investigation of transport in molecular semiconductors.

cond-mat.mtrl-sci↗

arXiv2008

Room Temperature Ferromagnetic Semiconductor Rutile Ti1-xCoxO2-δEpitaxial Thin Films Grown by Sputtering Method

Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ(101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall effect were clearly observed at room temperature in sputter-grown films for the first time. The magnetization value is nearly as large as 3μB/Co that is consistent with the high spin state Co2+ in this compound recently established by spectroscopic methods. Consequently, its originally large magneto-optical response is further enhanced.

cond-mat.mtrl-sci↗

arXiv2007

A scaling relation of anomalous Hall effect in ferromagnetic semiconductors and metals

A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional to sigma_xx_^1.6, that is coincident with a recent theory. This relation is valid over five decades of sigma_xx_ irrespective of metallic or hopping conduction.

cond-mat.mtrl-sci↗

arXiv2007

Anomalous Hall effect in anatase Ti1-xCoxO2 at low temperature regime

Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity sigma_AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-xCoxO2 also follows a scaling relationship to conductivity sigma_xx as sigma_AHE ~ sigma_xx^1.6, which was observed for another polymorph rutile Ti1-xCoxO2, suggesting an identical mechanism of their AHE.

cond-mat.mtrl-sci↗