arXiv subjects

Masamichi Yoshimura

Publications and source records attributed to Masamichi Yoshimura.

2 recordsLinked to original sources

arXiv2021

Enhanced graphitic domains of unreduced graphene oxide and the interplay of hydration behaviour and catalytic activity

Previous studies indicate that the properties of graphene oxide (GO) can be significantly improved by enhancing its graphitic domain size through thermal diffusion and clustering of functional groups. Remarkably, this transition takes place below the decomposition temperature of the functional groups and thus allows fine-tuning of graphitic domains without compromising with the functionality of GO. By studying the transformation of GO under mild thermal treatment, we directly observe this size enhancement of graphitic domains from originally 40 nm2 to 200 nm2 through an extensive transmission electron microscopy (TEM) study. Additionally, we confirm the integrity of the functional groups during this process by comprehensive chemical analysis. A closer look into the process confirms the theoretically predicted relevance for the room temperature stability of GO. We further investigate the influence of enlarged graphitic domains on the hydration behaviour of GO and catalytic performance of single-atom catalysts supported by GO.

physics.app-ph↗

arXiv2020

Direct growth of germanene at interfaces between van der Waals materials and Ag(111)

Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al2O3 cap layer resulted in no germanene formation. The present study also proved that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.

cond-mat.mtrl-sci↗