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Masashi Kawasaki

Publications and source records attributed to Masashi Kawasaki.

At least 19 recordsLinked to original sources

Coherent Microwave Control of Optically Addressable Donor Qubits in ZnO

Optically addressable shallow donors in ZnO combine efficient spin-selective optical transitions with the potential for long spin coherence in an isotopically purifiable host lattice, making them an attractive platform for spin-photon quantum technologies. A key missing capability, however, has been coherent control beyond the small-angle rotations accessible with ultrafast optical pulses. Here we demonstrate coherent microwave control of implanted $^{115}\mathrm{In}$ donors in ZnO. Resonant optical pumping initializes and reads out the donor electron spin. Pulsed optically-detected magnetic resonance resolves the ten hyperfine transitions associated with the coupled $^{115}\mathrm{In}$ nuclear spin (I = 9/2) and reveals optical-pumping-induced nuclear spin polarization. We observe coherent Rabi oscillations with a maximum Rabi frequency of $Ω/2π= 36.2 \pm 0.7$\;MHz, corresponding to a $π$-pulse time of 13.8$\pm$0.3\;ns, and characterize the spin coherence using Ramsey, Hahn echo and dynamical-decoupling measurements. Unexpectedly, the measured coherence is substantially shorter than reported in previous optical studies of donor spins in ZnO at high magnetic field. Control experiments rule out several simple explanations including microwave heating and instantaneous diffusion from the driven donor ensemble, leaving an open question regarding the origin of decoherence at low magnetic field in microwave-controlled ZnO donors. These results establish microwave control of ZnO donor qubits with resonant optical access to specific donor species. More broadly, they demonstrate that coherent microwave control can be achieved in optically addressable spin systems with nanosecond-scale inhomogeneous dephasing, enabling field-, temperature-, and materials-dependent studies of coherence-limiting mechanisms and the development of optically interfaced electron-nuclear spin registers.

quant-ph↗

Two-dimensional superconducting diode effect in topological insulator/superconductor heterostructure

The superconducting diode effect (SDE) is characterized by the nonreciprocity of Cooper-pair motion with respect to current direction. In three-dimensional (3D) materials, SDE results in a critical current that varies with direction, making the effect distinctly observable: the material exhibits superconductivity in one direction while behaving as a resistive metal in the opposite direction. However, in genuinely two-dimensional (2D) materials, the critical current density is theoretically zero, leaving the manifestation of SDE in the 2D limit an intriguing challenge. Here, we present the observation of SDE in a heterostructure composed of the topological insulator Bi$_2$Te$_3$ and the iron based superconductor Fe(Se,Te) $-$a candidate for topological superconductor$-$ where superconductivity is confined to the 2D limit. The observed I-V characteristics reveal nonreciprocity in the vortex-creep regime, where finite voltages arise due to the two-dimensional nature of superconductivity. Furthermore, our 2D film demonstrates abrupt voltage jumps, influenced by both the current flow direction and the transverse magnetic field direction. This behavior resembles that of 3D materials but, in this case, is driven by the vortex-flow instability, as illustrated by voltage controlled S-shaped I-V curves. These results underscore the pivotal role of vortex dynamics in SDE and provide new insights into the interplay between symmetry breaking and two-dimensionality in topological insulator/superconductor systems.

cond-mat.supr-con↗

Structural origin of resonant diffraction in RuO$_2$

We report Ru L$_3$-edge resonant X-ray diffraction studies on single crystal and (001) epitaxial films of RuO$_2$. We investigate the distinct $\mathbf{Q} = (100)$ and $(001)$ reflections as a function of incident energy, azimuthal angle, and temperature. The results show that the observed resonant diffraction in RuO$_2$ is fully consistent with a resonant charge anisotropy signal of structural origin permitted by the parent (non-magnetic) rutile $P4_2/mnm$ space group. These results significantly constrain the magnetic contribution to the resonant diffraction signal and indicate the unlikely existence of $\mathbf{k} = 0$ antiferromagnetic order in RuO$_2$.

cond-mat.str-el↗

Higher-order epitaxy: A pathway to suppressing structural instability and emergent superconductivity

Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However, significant lattice mismatches can result in higher-order epitaxy, where commensurate growth occurs with a period defined by integer multiples of the lattice constants. Despite its potential, higher-order epitaxy is rarely used to enhance material properties or induce emergent phenomena. Here, we report single-crystalline FeTe films grown via 6:5 commensurate higher-order epitaxy on CdTe(001) substrates. Scanning transmission electron microscopy reveals self-organised periodic interstitials near the interface, arising from higher-order lattice matching. Synchrotron x-ray diffraction shows that the tetragonal-to-monoclinic structural transition in bulk FeTe is strongly suppressed. Remarkably, these films exhibit substrate-selective two-dimensional superconductivity, likely due to suppressed monoclinic distortion. These findings demonstrate the potential of higher-order epitaxy as a tool to control materials and inducing emergent phenomena.

cond-mat.mtrl-sci↗

Quantum geometry in low-energy linear and nonlinear optical responses of magnetic Rashba semiconductor (Ge,Mn)Te

Quantum geometry appears as a key factor in understanding the optical properties of quantum materials, with the anticipation on diverging or quantized responses near the Dirac and Weyl points. Here we investigate linear and nonlinear optical responses -- optical conductivity and injection current -- in a magnetic Rashba semiconductor in the mid-infrared region, with varying the Fermi energy across the Dirac point. We reveal that the linear optical conductivity reflects quantum metric, which remains finite irrespective of the diminishing joint density-of-states at lower photon energy. It is also confirmed that the magnetic injection current enhances depending on the energy of the Fermi level relative to the Dirac point. These optical spectra are nicely reproduced by our theoretical calculations with geometrical effects taken into account.

cond-mat.mtrl-sci↗

Control of nonreciprocal charge transport in topological insulator/superconductor heterostructures with Fermi level tuning and superconducting-layer thickness

Nonreciprocal charge transport (NCT) is defined as a phenomenon where electrical resistance depends on the current direction. It has been drawing much attention because it sensitively reflects the symmetry breaking of material systems. A topological insulator (TI)/superconductor (SC) heterostructure where the topological surface state (TSS) of the TI layer is proximitized with the SC layer is one such system that presents a sizable NCT due to a large spin-orbit coupling and superconductivity. Here, we report a control of the magnitude and sign of NCT: reversal of the direction of NCT by tuning the Fermi energy of TSS of the TI layer with respect to the charge neutral point by systematic regulation of Sb composition $x$ in a TI/SC heterostructures of (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/FeSe$_{0.1}$Te$_{0.9}$. The result is consistent with the model of a TSS proximitized with superconductivity. Furthermore, we find a significant enhancement of the magnitude of NCT in the TI/SC heterostructures by reducing the thickness of the SC layer. The enhancement can be ascribed to the inversion-symmetry breaking of the FeSe$_{0.1}$Te$_{0.9}$ SC-layer itself adjacent to the TI layer. Our results highlight the essential role of the TSS for exhibiting NCT and offer new knobs to control the direction and magnitude of NCT.

cond-mat.supr-con↗

AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator

Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is demonstrated in a semi-magnetic topological insulator (Cr,Bi,Sb)2Te3/(Bi,Sb)2Te3, facilitated by a low threshold current density of 1.5x10^9 A/m^2. Time-domain Hall voltage measurements using an oscilloscope reveal a strongly nonlinear and nonreciprocal Hall response during the magnetization reversal process. Fourier analysis of the time-varying Hall voltage identifies higher-harmonic signals and a rectified direct-current (DC) component, highlighting the complex interplay among the applied current, external magnetic field, and magnetization dynamics. Furthermore, a hysteretic behavior in the current-voltage characteristics gives rise to frequency mixing under dual-frequency excitation. This effect, distinct from conventional polynomial-based nonlinearities, allows for selective extraction of specific frequency components. The results demonstrate that AC excitation can not only switch magnetization efficiently but also induce tunable nonlinear responses, offering a new pathway for multifunctional spintronic devices with potential applications in energy-efficient memory, signal processing, and frequency conversion.

cond-mat.mes-hall↗

Formation of multiple quantum dots in ZnO heterostructures

In recent years, advancements in semiconductor manufacturing technology have enabled the formation of high-quality, high-mobility two-dimensional electron gases in zinc oxide (ZnO) heterostructures, making the electrostatic formation of quantum dots possible. ZnO, with its low natural abundance of isotopes possessing nuclear spin and its direct bandgap, is considered a potentially suitable material for quantum bit applications. In this study, we achieve the formation of triple quantum dots and the realization of a few-electron state in ZnO heterostructure devices. We also confirm that by varying the gate voltage between the quantum dots, it is possible to control the interdot spacing. Additionally, we observe a tunneling phenomenon called a quantum cellular automata effect, where multiple electrons move simultaneously, which is not seen in single or double quantum dots, due to Coulomb interactions. Our results demonstrate that ZnO nanostructures have reached a level where they can function as controllable multiple quantum dot systems.

cond-mat.mes-hall↗

Non-Fermi liquid transport and strong mass enhancement near the nematic quantum critical point in FeSe$_x$Te$_{1-x}$ thin films

Unconventional superconductivity is often accompanied by non-Fermi liquid (NFL) behavior, which emerges near a quantum critical point (QCP) - a point where an electronic ordered phase is terminated at absolute zero under non-thermal parameters. While nematic orders, characterized by broken rotational symmetry, are sometimes found in unconventional superconductors, the role of nematic fluctuations in driving NFL transport behavior remains unclear. Here, we investigated electrical and thermoelectric transport properties in FeSe$_x$Te$_{1-x}$ thin films and observed hallmark NFL behavior: temperature-linear resistivity and logarithmic divergence of thermoelectricity at low temperatures. Notably, the thermoelectricity peaks sharply at the nematic QCP ($x$ = 0.45), highlighting the dominant role of nematic fluctuations in the NFL transport. Furthermore, we found that the pair-breaking mechanisms in the superconducting phase crosses over from orbital- to Pauli-limited effects, indicating the mass enhancement near the nematic critical regime. These findings reveal the profound impact of nematic fluctuations on both normal-state transport and superconducting properties.

cond-mat.str-el↗

Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry

Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as high-speed readout and charge sensing capabilities has become essential. In this study, we address these challenges by demonstrating radio-frequency (rf) reflectometry and charge sensing in ZnO quantum dots, thus advancing the potential for qubit applications. A device is fabricated on a high-quality ZnO heterostructure, featuring gate-defined target and sensor quantum dots. The sensor dot, integrated into an rf resonator circuit, enables the detection of single-electron charges in the target dots. Using this setup, the formation of few-electron double quantum dots is observed by obtaining their charge stability diagram. Also, a charge stability diagram with a gate pulse sequence is measured. We discuss the strong electron correlation in ZnO, which leads to nearly degenerate spin-singlet and -triplet two-electron states in the (0, 2) charge state, and the perspectives on spin-state readout.

cond-mat.mes-hall↗

Emergence of ferroelectric topological insulator as verified by quantum Hall effect of surface states in (Sn,Pb,In)Te films

Emergent phenomena arising from nontrivial band structures based on topology and symmetry have been attracting keen interest in contemporary condensed-matter physics. Materials such as SnTe and PbTe are one such example, which demonstrate a topological phase transition while showing ferroelectric instability derived from their rock-salt structure. The ferroelectricity can lift the valley degeneracy, enabling the emergence of the Z2 topological insulator phase, although its observation in transport phenomena remains elusive. Here, we report magnetotransport properties of ferroelectric (Sn,Pb)Te thin films with finely-controlled Fermi levels via In doping. We identified the ferroelectric topological insulator phase from the observations of the quantum Hall states with filling factors of $ν$ = 1, 2 and 3 with both spin- and valley-degeneracy lifting. The electronic states are two-dimensional, indicating the ferroelectricity-induced topological surface states with a single Dirac cone. The finding of the new topological state with ferroelectricity will further expand the field of topological physics and advance the development of functional properties, such as topological nonlinear photonics and nonreciprocal transport with memory effect.

cond-mat.mtrl-sci↗

This took us a Weyl: synthesis of a semimetallic Weyl ferromagnet with point Fermi surface

Quantum materials governed by emergent topological fermions have become a cornerstone of physics. Dirac fermions in graphene form the basis for moiré quantum matter, and Dirac fermions in magnetic topological insulators enabled the discovery of the quantum anomalous Hall effect. In contrast, there are few materials whose electromagnetic response is dominated by emergent Weyl fermions. Nearly all known Weyl materials are overwhelmingly metallic, and are largely governed by irrelevant, conventional electrons. Here we theoretically predict and experimentally observe a semimetallic Weyl ferromagnet in van der Waals (Cr,Bi)$_2$Te$_3$. In transport, we find a record bulk anomalous Hall angle $> 0.5$ along with non-metallic conductivity, a regime sharply distinct from conventional ferromagnets. Together with symmetry analysis, our data suggest a semimetallic Fermi surface composed of two Weyl points, with a giant separation $> 75\%$ of the linear dimension of the bulk Brillouin zone, and no other electronic states. Using state-of-the-art crystal synthesis techniques, we widely tune the electronic structure, allowing us to annihilate the Weyl state and visualize a unique topological phase diagram exhibiting broad Chern insulating, Weyl semimetallic and magnetic semiconducting regions. Our observation of a semimetallic Weyl ferromagnet offers an avenue toward novel correlated states and non-linear phenomena, as well as zero-magnetic-field Weyl spintronic and optical devices.

cond-mat.mes-hall↗

Topological Hall effect in a non-magnetic metal interfaced to a canted antiferromagnetic insulator in perovskite oxide heterostructures

We report interfacial transport properties in in-situ grown orthorhombic perovskite oxide heterostructures consisting of an antiferromagnetic insulator DyFeO$_3$ and a paramagnetic conductor CaRuO$_3$. We observe Hall effect with a step-like increase amounting to an effective magnetic field of 30 T at 20 K. We provide a plausible explanation in the context of topological Hall effect originating from a non-coplanar spin texture and resultant emergent field in DyFeO$_3$ associated with the scalar spin chirality. Our results demonstrate that the proximity effect of the emergent field at heterointerfaces is a universal physical phenomenon, while it has been reported originally in a heterointerface composed of pyrochlore oxides. This will greatly expand the choice of materials to the heterointerfaces for the research in emergent transport phenomena, which has been limited to single compounds with both metallic properties and special spin textures. Additionally, this will pave the way for possible device application of the emergent field by designing and combining perovskite oxides with versatile functionalities such as multiferroicity.

cond-mat.mtrl-sci↗

Molecular beam epitaxy of superconducting FeSe$_{x}$Te$_{1-x}$ thin films interfaced with magnetic topological insulators

Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor FeSe$_{x}$Te$_{1-x}$ (FST) thin films across the entire composition range of $0 \leq x \leq 1$ and its heterostructure with a magnetic topological insulator by using molecular beam epitaxy. Superconductivity is observed in the FST films with an optimal superconducting transition temperature $T_c$ $\sim$ 12 K at around x = 0.1. We found that superconductivity survives in the very Te-rich films ($x \leq 0.05$), showing stark contrast to bulk crystals with suppression of superconductivity due to an appearance of bicollinear antiferromagnetism accompanied by a monoclinic structural transition. By examining thickness $t$ dependence of magnetic susceptibility and electrical transport properties, we observed a trend where anomalies associated with the first order structural transition broaden in films with below $t \sim$ 100 nm. We infer this observation suggests a suppression of the structural instability near substrates. Furthermore, we fabricated an all chalcogenide-based heterointerface between FST and a magnetic topological insulator (Cr,Bi,Sb)$_{2}$Te$_{3}$ for the first time, observing both superconductivity and a large anomalous Hall conductivity. The anomalous Hall conductivity increases with decreasing temperature, approaching the quantized value of $e^2/h$ down to the measurable minimum temperature at $T_c$. The result suggests coexistence of magnetic and superconducting gaps at low temperatures opening at the top and bottom surfaces, respectively. Our novel magnetic topological insulator/superconductor heterostructure could be an ideal platform to explore chiral Majorana edge mode.

cond-mat.supr-con↗

Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films

Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique quantum phase related to metamagnetism in bulk systems did not progress well. Here we report the fabrication of high-quality Sr$_3$Ru$_2$O$_7$ thin films by oxide MBE and the observation of a strain-induced ferromagnetic ground state. The change in magnetic exchange coupling evaluated by first-principles calculations indicates a systematic relation between the compression of the $c$-axis length and induced ferromagnetism. Giant epitaxial strain in high-quality films will be a key to a comprehensive understanding of the magnetism in Ruddlesden-Popper strontium ruthenates Sr$_{n+1}$Ru$_n$O$_{3n+1}$, which sensitively depends on the ratio of in-plane to out-of-plane Ru-Ru distances.

cond-mat.str-el↗

Berry curvature derived negative magnetoconductivity observed in type-II magnetic Weyl semimetal films

Here we study nonmonotonic features which appear both in magnetoresistivity and anomalous Hall resistivity during the simple magnetization process, by systematically measuring type-II magnetic Weyl semimetal EuCd$_2$Sb$_2$ films over a wide carrier density range. We find that a positive magnetoresistivity hump can be explained as manifestation of a field-linear term in the generalized magnetoconductivity formula including the Berry curvature. As also confirmed by model calculation, the term can be negative and pronounced near the Weyl point energy in the case that the Weyl cones are heavily tilted. Our findings demonstrate extensive effects of the Berry curvature on various magnetotransport in magnetic Weyl semimetals beyond the anomalous Hall effect.

cond-mat.mtrl-sci↗

Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 films

Searching for an ideal magnetic Weyl semimetal hosting only a single pair of Weyl points has been a focal point for systematic clarification of its unique magnetotransport derived from the interplay between topology and magnetization. Among the candidates, triangular-lattice antiferromagnet EuCd$_2$As$_2$ has been attracting special attention due to the prediction of the ideal Weyl semimetal phase in the ferromagnetic state, however, transport properties of low-carrier density samples have remained elusive. Here we report molecular beam epitaxy growth of EuCd$_2$As$_2$ films, achieving low-hole density in the range of $10^{15}$-$10^{16}$ cm$^{-3}$ at low temperature. Transport measurements of such low-carrier density films reveal an insulating behavior with an activation gap of about 200 meV, which persists even in the field-induced ferromagnetic state. Our work provides an important experimental clue that EuCd$_2$As$_2$ is intrinsically insulating, contrary to the previous prediction.

cond-mat.mtrl-sci↗

Edge and bulk states in Weyl-orbit quantum Hall effect as studied by Corbino measurements

We investigate edge and bulk states in Weyl-orbit based quantum Hall effect by measuring a Corbino-type device fabricated from a topological Dirac semimetal (Cd1-xZnx)3As2 film. Clear quantum Hall plateaus are observed when measuring one-sided terminals of the Corbino-type device. This indicates that edge states of the Weyl-orbit quantum Hall effect form closed trajectories consisting of Fermi arcs and chiral zero modes independently on inner and outer sides. On the other hand, the bulk resistance does not diverge at fields where the quantum Hall plateau appears, suggesting that the Weyl orbits in the bulk region are not completely localized when applying electric current through the bulk region.

cond-mat.mes-hall↗