arXiv subjects

Masashi Kawasaki

Publications and source records attributed to Masashi Kawasaki.

At least 55 records · Page 3Linked to original sources

arXiv2019

Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators

We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.

cond-mat.mes-hall↗

arXiv2019

Quantized surface transport in topological Dirac semimetal films

Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bulks have drawn attention to the novel quantization phenomena possibly evolving from the Weyl orbit. Here we report surface quantum oscillation and its evolution into quantum Hall states in Cd3As2 thin film samples, where bulk dimensionality, Fermi energy, and band topology are systematically controlled. We reveal essential involvement of bulk states in the quantized surface transport and the resultant quantum Hall degeneracy depending on the bulk occupation. Our demonstration of surface transport controlled in film samples also paves a way for engineering Fermi-arc-mediated transport in topological semimetals.

cond-mat.str-el↗

arXiv2018

Current-voltage characteristic and shot noise of shift current photovoltaics

We theoretically study the current-voltage relation, $I-V$ characteristic, of the photovoltaics due to the shift current, i.e., the photocurrent generated ${\it without}$ the external dc electric field in noncentrosymmetric crystals through the Berry connection of the Bloch wavefunctions. We find that the $I-V$ characteristic and shot noise are controlled by the difference of group velocities between conduction and valence bands, i.e., $v_{11}-v_{22}$, and the relaxation time $τ$. Since the shift current itself is independent of these quantities, there are wide possibilities to design it to maximize the energy conversion rate and also to suppress the noise. We propose that the Landau levels in noncentrosymmetric two-dimensional systems are the promising candidate for energy conversion.

cond-mat.mes-hall↗

arXiv2018

Andreev reflection at the interface with an oxide in the quantum Hall regime

Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contacts, preventing efficient proximity between the quantum Hall edge states and Cooper pairs. Only recently have relatively transparent 2DES/superconductor junctions been investigated in graphene. In this study, we propose another material system for investigating 2DES/superconductor junctions, that is ZnO-based heterostrcuture. Due to the ionic nature of ZnO, a Schottky barrier is not effectively formed at the contact with a superconductor MoGe, as evidenced by the appearance of Andreev reflection at low temperatures. With applying magnetic field, while clear quantum Hall effect is observed for ZnO 2DES, conductance across the junction oscillates with the filling factor of the quantum Hall states. We find that Andreev reflection is suppressed in the well developed quantum Hall regimes, which we interpret as a result of equal probabilities of normal and Andreev reflections as a result of multiple Andreev reflection at the 2DES/superconductor interface.

cond-mat.mes-hall↗

arXiv2018

Signatures of charge-order correlations in transport properties of electron-doped cuprate superconductors

The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in electron-doped cuprates suggest that charge correlations should also play an important role on the electronic states of cuprates, although those correlations have been so far detected mainly by x-ray scattering measurements. Here we show signatures of CO correlations in transport properties of electron-doped cuprates as anomalous enhancement of the metal-to-insulator crossover temperature (Tmin) appears in the limited doping range near the onset of superconductivity, while it decreases exactly when superconductivity sets in. We explain this non-monotonous peak-like behavior of Tmin in terms of the evolution of the electronic states through development of CO correlations and appearance of the hole pockets in the folded Fermi surface, which impact on transport properties consecutively at different locations in the momentum space.

cond-mat.str-el↗

arXiv2018

Topological quantum phase transition in magnetic topological insulator upon magnetization rotation

We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the critical behavior of the transition. The slope of the transition curves follows a power-law temperature dependence with a critical exponent of $-0.61$. This suggests a common underlying origin in the plateau transitions between the QAH and quantum Hall systems, which is a percolation of one-dimensional chiral edge channels.

cond-mat.mes-hall↗

arXiv2018

Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2

The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling parameter. From this perspective, we report here the carrier-density control of quantum Hall states realized in thin films of DSM Cd3As2. Chemical doping of Zn combined with electrostatic gating has enabled us to tune the carrier density over a wide range and continuously even across the charge neutrality point. Comprehensive analyses of the gate-tuned quantum transport have revealed Landau level formation from linearly dispersed sub-bands and its contribution to the quantum Hall states. Our achievements pave the way also for investigating the low energy physics near the Dirac points of DSM.

cond-mat.mtrl-sci↗

arXiv2018

Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3

Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate.

cond-mat.mtrl-sci↗

arXiv2018

Topological Properties and Functionalities in Oxide Thin Films and Interfaces

As symbolized by the Nobel Prize in Physics 2016, "topology" has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of study for the oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials with sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

cond-mat.str-el↗

arXiv2018

Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened in itinerant magnets. Here we demonstrate that both anomalous and topological Hall effects can be modulated by electric field in oxide heterostructures consisting of ferromagnetic SrRuO$_{3}$ and nonmagnetic SrIrO$_{3}$. We observed clear electric-field effect only when SrIrO$_{3}$ is inserted between SrRuO$_{3}$ and a gate dielectric. Our results establish that strong SOC of nonmagnetic materials such as SrIrO$_{3}$ is essential in electrical tuning of these Hall effects and possibly other SOC-related phenomena.

cond-mat.str-el↗

arXiv2017

Quantum Hall states observed in thin films of Dirac semimetal Cd3As2

A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.

cond-mat.mtrl-sci↗

arXiv2017

Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators

Instability of quantum anomalous Hall (QAH) effect has been studied as function of electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hopping (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 $μ$m. The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states.

cond-mat.mes-hall↗

arXiv2016

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO$_3$ thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions.

cond-mat.mtrl-sci↗

arXiv2016

Direct Imaging of Dynamic Glassy Behavior in a Strained Manganite Film

Complex many-body interaction in perovskite manganites gives rise to a strong competition between ferromagnetic metallic and charge ordered phases with nanoscale electronic inhomogeneity and glassy behaviors. Investigating this glassy state requires high resolution imaging techniques with sufficient sensitivity and stability. Here, we present the results of a near-field microwave microscope imaging on the strain driven glassy state in a manganite film. The high contrast between the two electrically distinct phases allows direct visualization of the phase separation. The low temperature microscopic configurations differ upon cooling with different thermal histories. At sufficiently high temperatures, we observe switching between the two phases in either direction. The dynamic switching, however, stops below the glass transition temperature. Compared with the magnetization data, the phase separation was microscopically frozen, while spin relaxation was found in a short period of time.

cond-mat.mes-hall↗

arXiv2013

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

cond-mat.supr-con↗

arXiv2013

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not the ferromagnetic exchange interaction is mediated by charge carriers like (Ga,Mn)As. Recent two studies on the control of ferromagnetism in anatase (Ti,Co)O2 at room temperature via electric field effect [Y. Yamada et al., Science 332, 1065 (2011)] and chemical doping [Y. Yamada et al., Appl. Phys. Lett. 99, 242502 (2011)] indicate a principal role of electrons in the carrier-mediated exchange interaction. In this article, the authors review fundamental properties of anatase (Ti,Co)O2 and discuss the carrier mediated ferromagnetism.

cond-mat.mtrl-sci↗

arXiv2012

Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskites

We have studied the atomic ordering of B-site transition metals and magnetic properties in the pulsed-laser deposited films of La2CrFeO6 (LCFO) and La2VMnO6 (LVMO), whose bulk materials are known to be single perovskites with random distribution of the B-site cations. Despite similar ionic characters of constituent transition metals in each compound, the maximum B-site order attained was surprisingly high, ~90% for LCFO and ~80% for LVMO, suggesting a significant role of epitaxial stabilization in the spontaneous ordering process. Magnetization and valence state characterizations revealed that the magnetic ground state of both compounds was coincidently ferrimagnetic with saturation magnetization of ~2myuB per formula unit, unlike those predicted theoretically. In addition, they were found to be insulating with optical band gaps of 1.6 eV and 0.9 eV for LCFO and LVMO, respectively. Our results present a wide opportunity to explore novel magnetic properties of binary transition-metal perovskites upon epitaxial stabilization of the ordered phase.

cond-mat.mtrl-sci↗

arXiv2012

Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet

Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous perovskite SrMoO3 is a highly conducting paramagnetic material, but Eu2+ and Mo4+ are not compatible in equilibrium and previous study found more stable pyrochlore Eu23+Mo24+O7 prefers to form. By using isostructural perovskite substrates, the gain of the interface energy between the film and the substrate stabilizes the matastable EuMoO3 phase. This compound exhibits high conductivity and large magnetic moment, originating from Mo 4d2 electrons and Eu 4f7 electrons, respectively. Our result indi-cates the epitaxial stabilization is effective not only to stabilize crystallographic structures but also to from a new compound which contains unstable combinations of ionic valences in bulk form.

cond-mat.mtrl-sci↗