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Masayuki Suda

Publications and source records attributed to Masayuki Suda.

4 recordsLinked to original sources

Emergent Cooperative Superstructures via Order-Disorder Kinetics in Molecule-Intercalated NbSe2

The design of quantum states at heterointerfaces has enabled a variety of emergent phenomena. Among them, molecular intercalation superlattices have attracted attention as tunable hybrid materials, formed by inserting organic molecules into van der Waals crystals, where molecular structure and chemistry provide new degrees of freedom. Traditionally, the intercalated molecules have been regarded as inactive spacers, while possible molecular ordering and its impact on the host lattice have remained largely unexplored. Here, we report the discovery of a cooperative superstructure (CSS) phase in molecule intercalated NbSe2, where ordering of the guest molecules induce a concomitant superstructure in the NbSe2 host lattice, characterized by a moir\'e structure due to incommensurability between the molecular layer and the inorganic lattice. Synchrotron X-ray diffraction reveals the emergence of CSS phase, accompanied by crystal symmetry lowering. Complementary resistivity and thermal-quench measurements show that the transition is governed by unusually slow order-disorder kinetics, so that the CSS phase can be selectively accessed under standard laboratory cooling rates. This kinetic behavior arises from slow molecular dynamics coupled to the host lattice, contrasting with fast charge or magnetic ordering in inorganic solids. Our findings establish molecular ordering as a route for engineering heterointerfaces, enabling thermally programmable superstructures.

cond-mat.mtrl-sci

Electric-field control of two-dimensional ferromagnetic properties by chiral ionic gating

Chiral molecular systems offer unique pathways to control spin and magnetism beyond conventional symmetry operations. Here, we demonstrate that chiral ionic liquids enable electric-field modulation of two-dimensional (2D) ferromagnetism in FeSi(111) thin films via electric double-layer transistor (EDLT) gating. FeSi hosts chemically-stable, surface-confined ferromagnetism without bulk moments, making the interfacial spins highly responsive to chiral-ion adsorption. Using both achiral and chiral ionic liquids, we systematically compare electrochemical and electrostatic gating effects. While both gating modes modulate magnetic properties such as anomalous Hall conductivity and coercive field, only chiral ionic gating biases the ratio of up- and down-magnetized domains in a handedness-dependent manner, evidencing chirality-induced symmetry breaking. This work establishes chiral ion gating as a novel strategy for controlling magnetic order and opens new directions for chiral spintronics.

cond-mat.mes-hall

Critical Behavior in Doping-Driven Metal$-$Insulator Transition on Single-Crystalline Organic Mott-FET

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_2$CuN(CN)$_2$Cl ($κ$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with "bad metal" behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions. [This document is the unedited Authors' version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b03817]

cond-mat.str-el

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

cond-mat.supr-con