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Mason Gray

Publications and source records attributed to Mason Gray.

5 recordsLinked to original sources

Nontrivial Boundary-Mediated Superconducting Transport in a TRSB Topological Iron-Based Superconductor

The interplay of superconductivity, band topology, and spontaneous time-reversal-symmetry breaking (TRSB) is expected to enable topological superconducting boundary states. FeTe0.55Se0.45 provides a promising single-material platform because it combines superconductivity, nontrivial band topology, and spontaneous magnetization in the superconducting state. Here we report evidence for a boundary-mediated superconducting transport response in exfoliated Fe(Te,Se) devices. Polar Kerr measurements show that TRSB emerges below TKerr < Tc and coexists with superconductivity across multiple compositions, providing an independent symmetry-breaking scale for transport. Using crystallographically sharp, continuous edges and side-surface-dominant contacts, we find that topological FeTe0.55Se0.45 exhibits an anomalous conductance plateau absent in topologically trivial FeTe0.40Se0.60 and Fe1.02Te0.55Se0.45 under comparable measurements. This plateau requires uninterrupted sharp edges connecting source and drain, persists over micrometer-scale separations far exceeding the bulk coherence length, shows strongly suppressed thermal broadening, and collapses when the drain is moved to the top surface. Its temperature evolution follows the TRSB scale: the plateau remains weakly broadened below T*Kerr and disappears near TKerr rather than Tc. These doping-selective, edge-geometry-dependent, TRSB-correlated, and long-range nonlocal signatures establish experimental criteria for identifying boundary-mediated superconducting transport in FeTe0.55Se0.45 and motivate phase-sensitive and theoretical studies of its microscopic origin.

cond-mat.supr-con

Weyl-Superconductivity revealed by Edge Mode mediated Nonlocal Transport

Topological superconductivity (TSC) hosts exotic modes enabling error-free quantum computation and low-temperature spintronics. Despite preliminary evidence of edge modes, unambiguous signatures remain undetected. Here, we report the first observation of protected, non-local transport from the edge modes of the potential Weyl-superconductor \ch{FeTe_{0.55}Se_{0.45}}. Namely resonant charge injection, ballistic transport, and extraction via edge modes. An anomalous conductance plateau emerges only when topological, superconducting, and magnetic phases coexist, with source-drain contacts coupled via the edge. Moving the drain to the bulk switches the non-local transport process to a local Andreev process, generating a zero-bias conductance peak (ZBCP). The edge mode's topological protection is confirmed by its insensitivity to external magnetic fields and increasing temperatures until the spontaneous magnetization is substantially suppressed. Our findings provide a new methodology to demonstrate TSC edge states in \ch{FeTe_{0.55}Se_{0.45}} via topologically protected non-local transport.

cond-mat.supr-con

Modulation Doping via a 2d Atomic Crystalline Acceptor

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $\alpha$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).

cond-mat.mtrl-sci

Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir

Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot. Depending on the tunnel-coupling strength, this capability facilitates single spin quantum bits or coherent many-body interactions between the confined spin and the Fermi reservoir. Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins, tunnel barriers down to the atomic limit or a Fermi reservoir beyond the conventional flat density of states. However, gate-control of vdW nanostructures at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (~8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.

cond-mat.mes-hall

High mobility in a van der Waals layered antiferromagnetic metal

Magnetic van der Waals (vdW) materials have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far magnetic vdW materials are mainly insulating or semiconducting, and none of them possesses a high electronic mobility - a property that is rare in layered vdW materials in general. The realization of a magnetic high-mobility vdW material would open the possibility for novel magnetic twistronic or spintronic devices. Here we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V-1 s-1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus, and is only surpassed by graphite. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers, and that the magnetic order and relatively high mobility is retained in approximately 20-nm-thin flakes.

cond-mat.mtrl-sci