arXiv subjects

Massimiliano Di Ventra

Publications and source records attributed to Massimiliano Di Ventra.

At least 127 records · Page 7Linked to original sources

arXiv2011

Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules

We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT supports the assertion of hole doping via a charge-transfer process between FTS molecules and P3HT. In highly-doped films with a significantly enhanced polaron band, we find a monotonic Drude-like absorption in the far-IR, signifying delocalized states. Utilizing a simple capacitor model of an OFET, we extracted a carrier density for FTS-treated P3HT from the spectroscopic data. With carrier densities reaching 10$^{14}$ holes/cm$^2$, our results demonstrate that FTS doping provides a unique way to study the metal-insulator transition in polythiophenes.

cond-mat.mtrl-sci↗

arXiv2011

Solving mazes with memristors: a massively-parallel approach

Solving mazes is not just a fun pastime. Mazes are prototype models in graph theory, topology, robotics, traffic optimization, psychology, and in many other areas of science and technology. However, when maze complexity increases their solution becomes cumbersome and very time consuming. Here, we show that a network of memristors - resistors with memory - can solve such a non-trivial problem quite easily. In particular, maze solving by the network of memristors occurs in a massively parallel fashion since all memristors in the network participate simultaneously in the calculation. The result of the calculation is then recorded into the memristors' states, and can be used and/or recovered at a later time. Furthermore, the network of memristors finds all possible solutions in multiple-solution mazes, and sorts out the solution paths according to their length. Our results demonstrate not only the first application of memristive networks to the field of massively-parallel computing, but also a novel algorithm to solve mazes which could find applications in different research fields.

cond-mat.mes-hall↗

arXiv2011

Ionic Coulomb Blockade in Nanopores

Understanding the dynamics of ions in nanopores is essential for applications ranging from single-molecule detection to DNA sequencing. We show both analytically and by means of molecular dynamics simulations that under specific conditions ion-ion interactions in nanopores lead to the phenomenon of ionic Coulomb blockade, namely the build-up of ions inside a nanopore with specific capacitance impeding the flow of additional ions due to Coulomb repulsion. This is the counterpart of electronic Coulomb blockade observed in mesoscopic systems. We discuss the analogies and differences with the electronic case as well as experimental situations in which this phenomenon could be detected.

cond-mat.soft↗

arXiv2011

Emulation of floating memcapacitors and meminductors using current conveyors

We suggest circuit realizations of emulators transforming memristive devices into effective floating memcapacitive and meminductive systems. The emulator's circuits are based on second generation current conveyors and involve either four single-output or two dual-output current conveyors. The equations governing the resulting memcapactive and meminductive systems are presented.

physics.ins-det↗

arXiv2011

Stochastic quantum molecular dynamics for finite and extended systems

We present a detailed account of the technical aspects of stochastic quantum molecular dynamics, an approach introduced recently by the authors [H. Appel and M. Di Ventra, Phys. Rev. B 80 212303 (2009)] to describe coupled electron-ion dynamics in open quantum systems. As example applications of the method we consider both finite systems with and without ionic motion, as well as describe its applicability to extended systems in the limit of classical ions. The latter formulation allows the study of important phenomena such as decoherence and energy relaxation in bulk systems and surfaces in the presence of time-dependent fields.

cond-mat.mtrl-sci↗

arXiv2011

Viscous corrections to the resistance of nano-junctions: a dispersion relation approach

It is well known that the viscosity of a homogeneous electron liquid diverges in the limits of zero frequency and zero temperature. A nanojunction breaks translational invariance and necessarily cuts off this divergence. However, the estimate of the ensuing viscosity is far from trivial. Here, we propose an approach based on a Kramers-Krönig dispersion relation, which connects the zero-frequency viscosity, $η(0)$, to the high-frequency shear modulus, $μ_{\infty}$, of the electron liquid via $η(0) =μ_{\infty} τ$, with $τ$ the junction-specific momentum relaxation time. By making use of a simple formula derived from time-dependent current-density functional theory we then estimate the many-body contributions to the resistance for an integrable junction potential and find that these viscous effects may be much larger than previously suggested for junctions of low conductance.

cond-mat.mes-hall↗

arXiv2010

Memory effects in complex materials and nanoscale systems

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here the memory properties of various materials and systems which appear most strikingly in their non-trivial time-dependent resistive, capacitative and inductive characteristics. We describe these characteristics within the framework of memristors, memcapacitors and meminductors, namely memory circuit elements whose properties depend on the history and state of the system. We examine basic issues related to such systems and critically report on both theoretical and experimental progress in understanding their functionalities. We also discuss possible applications of memory effects in various areas of science and technology ranging from digital to analog electronics, biologically-inspired circuits, and learning. We finally discuss future research opportunities in the field.

cond-mat.mes-hall↗

arXiv2010

Dehydration and ionic conductance quantization in nanopores

There has been tremendous experimental progress in the last decade in identifying the structure and function of biological pores (ion channels) and fabricating synthetic pores. Despite this progress, many questions still remain about the mechanisms and universal features of ionic transport in these systems. In this paper, we examine the use of nanopores to probe ion transport and to construct functional nanoscale devices. Specifically, we focus on the newly predicted phenomenon of quantized ionic conductance in nanopores as a function of the effective pore radius - a prediction that yields a particularly transparent way to probe the contribution of dehydration to ionic transport. We study the role of ionic species in the formation of hydration layers inside and outside of pores. We find that the ion type plays only a minor role in the radial positions of the predicted steps in the ion conductance. However, ions with higher valency form stronger hydration shells, and thus, provide even more pronounced, and therefore, more easily detected, drops in the ionic current. Measuring this phenomenon directly, or from the resulting noise, with synthetic nanopores would provide evidence of the deviation from macroscopic (continuum) dielectric behavior due to microscopic features at the nanoscale and may shed light on the behavior of ions in more complex biological channels.

cond-mat.soft↗

arXiv2010

Energy flow and thermo-electricity in atomic and molecular junctions

Advances in the fabrication and characterization of nanoscale systems now allow for a deeper understanding of one of the most basic issues in science and technology: the flow of energy at the microscopic level. In this Colloquium we survey recent advances and present understanding of physical mechanisms of energy transport in nanostructures, focusing mainly on molecular junctions and atomic wires. We examine basic issues such as thermal conductivity, thermoelectricity, local temperature and heating, and the relation between energy current density and temperature gradient - known as Fourier's law. We critically report on both theoretical and experimental progress in each of these issues, and discuss future research opportunities in the field.

cond-mat.mes-hall↗

arXiv2010

Ionic Memcapacitive Effects in Nanopores

Using molecular dynamics simulations, we show that, when subject to a periodic external electric field, a nanopore in ionic solution acts as a capacitor with memory (memcapacitor) at various frequencies and strengths of the electric field. Most importantly, the hysteresis loop of this memcapacitor shows both negative and diverging capacitance as a function of the voltage. The origin of this effect stems from the slow polarizability of the ionic solution due to the finite mobility of ions in water. We develop a microscopic quantitative model which captures the main features we observe in the simulations and suggest experimental tests of our predictions. We also suggest a possible memory mechanism due to the transport of ions through the nanopore itself, which may be observed at small frequencies. These effects may be important in both DNA sequencing proposals using nanopores and possibly in the dynamics of action potentials in neurons.

cond-mat.soft↗

arXiv2010

Memory Metamaterials

The resonant elements that grant metamaterials their unique properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically-controlled persistent frequency tuning of a metamaterial, allowing lasting modification of its response using a transient stimulus. This work demonstrates a form of memory capacitance which interfaces metamaterials with a class of devices known collectively as memory devices.

cond-mat.mes-hall↗

arXiv2010

Experimental demonstration of associative memory with memristive neural networks

When someone mentions the name of a known person we immediately recall her face and possibly many other traits. This is because we possess the so-called associative memory, that is the ability to correlate different memories to the same fact or event. Associative memory is such a fundamental and encompassing human ability (and not just human) that the network of neurons in our brain must perform it quite easily. The question is then whether electronic neural networks (electronic schemes that act somewhat similarly to human brains) can be built to perform this type of function. Although the field of neural networks has developed for many years, a key element, namely the synapses between adjacent neurons, has been lacking a satisfactory electronic representation. The reason for this is that a passive circuit element able to reproduce the synapse behaviour needs to remember its past dynamical history, store a continuous set of states, and be "plastic" according to the pre-synaptic and post-synaptic neuronal activity. Here we show that all this can be accomplished by a memory-resistor (memristor for short). In particular, by using simple and inexpensive off-the-shelf components we have built a memristor emulator which realizes all required synaptic properties. Most importantly, we have demonstrated experimentally the formation of associative memory in a simple neural network consisting of three electronic neurons connected by two memristor-emulator synapses. This experimental demonstration opens up new possibilities in the understanding of neural processes using memory devices, an important step forward to reproduce complex learning, adaptive and spontaneous behaviour with electronic neural networks.

q-bio.NC↗

arXiv2010

Memristive circuits simulate memcapacitors and meminductors

We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and their operation has been demonstrated, showing a useful and interesting connection between the three memory elements.

physics.ins-det↗

arXiv2010

Practical approach to programmable analog circuits with memristors

We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and high voltages are used to program the memristor's states. This way, as it was demonstrated in recent experiments, the state of memristors does not essentially change during analog mode operation. As an example of our approach, we have built several programmable analog circuits demonstrating memristor-based programming of threshold, gain and frequency.

physics.ins-det↗

arXiv2009

Thermoelectric phenomena in disordered open quantum systems

Using a stochastic quantum approach, we study thermoelectric transport phenomena at low temperatures in disordered electrical systems connected to external baths. We discuss three different models of one-dimensional disordered electrons, namely the Anderson model of random on-site energies, the random-dimer model and the random-hopping model - also relevant for random-spin models. We find that although the asymptotic behavior of transport in open systems is closely related to that in closed systems for these noninteracting models, the magnitude of thermoelectric transport strongly depends on the boundary conditions and the baths spectral properties. This shows the importance of employing theories of open quantum systems in the study of energy transport.

cond-mat.dis-nn↗

arXiv2009

Dimer mean-field model for the Ising spin glass

A dimer mean-field model for the Ising spin-glass is presented. Despite its simplicity it captures some of the essential features of the spin-glass physics. The distribution of the single-spin magnetization is determined from a self-consistent integral equation. By solving the self-consistency condition numerically, we find that there are two temperature scales characterizing the glass transition. At the first, higher temperature, the glass order parameter becomes non-vanishing, and at the second, freezing temperature, it saturates to its maximal value. The effect of magnetic field and the existence of the Almeida-Thouless line are discussed. Finally, it is shown that the information compressibility, defined as the derivative of entropy with respect to energy, diverges at the freezing temperature. This indicates a zero internal temperature and true glassy dynamics with diverging relaxation times.

cond-mat.dis-nn↗

arXiv2009

Comment on ``Time-dependent current-density functional theory for generalized open quantum systems" by J. Yuen-Zhou, C. Rodriiguez-Rosario and A. Aspuru-Guzik

We comment on a recent paper by Yuen-Zhou et al. [ Phys. Chem. Chem. Phys. 2009, 11, 4509 ] which extends some of the results of Time-Dependent Current Density Functional Theory applied to open quantum systems. Besides pointing out some incorrect statements in the theorems, we show that in the proof of the main result of the paper an arbitrary condition is introduced. Moreover, we argue that, since this condition has not a physical origin, one can find two systems with different vector potentials that lead to the same dynamics of the physical quantities of interest, the current and particle densities.

cond-mat.mes-hall↗

arXiv2009

Stochastic Quantum Molecular Dynamics

An approach to correlated dynamics of quantum nuclei and electrons both in dynamical interaction with external environments is presented. This stochastic quantum molecular dynamics rests on a theorem that establishes a one-to-one correspondence between the total ensemble-averaged current density of interacting nuclei and electrons and a given external vector potential. The theory allows for a first-principles description of phenomena previously inaccessible via standard quantum molecular dynamics such as electronic and nuclear relaxation in photochemistry, dissipative correlated electron-ion dynamics in intense laser fields, nuclear dephasing, etc. As a demonstration of the approach, we discuss the rotational relaxation of 4-(N,N-dimethylamino)benzonitrile in a uniform bath in the limit of classical nuclei.

cond-mat.mtrl-sci↗