arXiv subjects

Massimo Macucci

Publications and source records attributed to Massimo Macucci.

18 recordsLinked to original sources

arXiv2026

Impact of control signal phase noise on qubit fidelity

As qubit decoherence times are increased and readout technologies are improved, nonidealities in the drive signals, such as phase noise, are going to represent a crucial limitation to the fidelity achievable at the end of complex control pulse sequences. Although the effect of phase noise of reference oscillators on qubit performance has been studied previously, its interaction with realistic time-dependent control pulses and its contribution to fidelity degradation have not yet been investigated in sufficient detail, and remains a critical challenge. Here we study the impact on fidelity of phase noise affecting reference oscillators with the help of numerical simulations, which allow us to directly take into account the interaction between the phase fluctuations in the control signals and the evolution of the qubit state, thereby achieving a comprehensive understanding of the actual role played by the different spectral components of phase noise. In particular, we perform an analysis of the effect of the individual noise frequency contributions, providing a clear identification of the spectral regions that most critically impact fidelity and establishing their relative weight in the overall fidelity degradation. Our method is based on the generation of phase noise realizations consistent with a given power spectral density, that are then applied to the pulse carrier in simulations, with Qiskit-Dynamics, of the qubit temporal evolution. By comparing the final state obtained at the end of a noisy pulse sequence with that in the ideal case and averaging over multiple noise realizations, we estimate the resulting degradation in fidelity, and, exploiting an approximate analytical representation of a carrier affected by phase fluctuations, we shed new light on the nature of the different contributions, and provide an intuitive physical picture.

quant-ph↗

arXiv2025

In vivo validation of Wireless Power Transfer System for Magnetically Controlled Robotic Capsule Endoscopy

This paper presents the in vivo validation of an inductive wireless power transfer (WPT) system integrated for the first time into a magnetically controlled robotic capsule endoscopy platform. The proposed system enables continuous power delivery to the capsule without the need for onboard batteries, thus extending operational time and reducing size constraints. The WPT system operates through a resonant inductive coupling mechanism, based on a transmitting coil mounted on the end effector of a robotic arm that also houses an external permanent magnet and a localization coil for precise capsule manipulation. To ensure robust and stable power transmission in the presence of coil misalignment and rotation, a 3D receiving coil is integrated within the capsule. Additionally, a closed-loop adaptive control system, based on load-shift keying (LSK) modulation, dynamically adjusts the transmitted power to optimize efficiency while maintaining compliance with specific absorption rate (SAR) safety limits. The system has been extensively characterized in laboratory settings and validated through in vivo experiments using a porcine model, demonstrating reliable power transfer and effective robotic navigation in realistic gastrointestinal conditions: the average received power was 110 mW at a distance of 9 cm between the coils, with variable capsule rotation angles. The results confirm the feasibility of the proposed WPT approach for autonomous, battery-free robotic capsule endoscopy, paving the way for enhanced diagnostic in gastrointestinal medicine.

cs.RO↗

arXiv2024

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-P\`erot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-P\`erot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-B\"uttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-P\`erot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

cond-mat.mes-hall↗

arXiv2024

Characterization of a Transmon Qubit in a 3D Cavity for Quantum Machine Learning and Photon Counting

In this paper we report the use of superconducting transmon qubit in a 3D cavity for quantum machine learning and photon counting applications. We first describe the realization and characterization of a transmon qubit coupled to a 3D resonator, providing a detailed description of the simulation framework and of the experimental measurement of important parameters, like the dispersive shift and the qubit anharmonicity. We then report on a Quantum Machine Learning application implemented on the single-qubit device to fit the u-quark parton distribution function of the proton. In the final section of the manuscript we present a new microwave photon detection scheme based on two qubits coupled to the same 3D resonator. This could in principle decrease the dark count rate, favouring applications like axion dark matter searches.

quant-ph↗

arXiv2023

Design and simulation of a transmon qubit chip for Axion detection

Quantum Sensing is a rapidly expanding research field that finds one of its applications in Fundamental Physics, as the search for Dark Matter. Devices based on superconducting qubits have already been successfully applied in detecting few-GHz single photons via Quantum Non-Demolition measurement (QND). This technique allows us to perform repeatable measurements, bringing remarkable sensitivity improvements and dark count rate suppression in experiments based on high-precision microwave photon detection, such as for Axions and Dark Photons search. In this context, the INFN Qub-IT project goal is to realize an itinerant single-photon counter based on superconducting qubits that will exploit QND for enhancing Axion search experiments. In this study, we present Qub-IT's status towards the realization of its first superconducting qubit device, illustrating design and simulation procedures and the characterization of fabricated Coplanar Waveguide Resonators (CPWs) for readout. We match target qubit parameters and assess a few-percent level agreement between lumped and distributed element simulation models. We reach a maximum internal quality factor of 9.2x10^5 for -92 dBm on-chip readout power.

quant-ph↗

arXiv2021

Revisiting the Memristor Concept within Basic Circuit Theory

In this paper we revisit the memristor concept within circuit theory. We start from the definition of the basic circuit elements, then we introduce the original formulation of the memristor concept and summarize some of the controversies on its nature. We also point out the ambiguities resulting from a non rigorous usage of the flux linkage concept. After concluding that the memristor is not a fourth basic circuit element, prompted by recent claims in the memristor literature, we look into the application of the memristor concept to electrophysiology, realizing that an approach suitable to explain the observed inductive behavior of the giant squid axon had already been developed in the 1960s, with the introduction of "time-variant resistors." We also discuss a recent memristor implementation in which the magnetic flux plays a direct role, concluding that it cannot strictly qualify as a memristor, because its $v-i$ curve cannot exactly pinch at the origin. Finally, we present numerical simulations of a few memristors and memristive systems, focusing on the behavior in the $\varphi-q$ plane. We show that, contrary to what happens for the most basic memristor concept, for general memristive systems the $\varphi-q$ curve is not single-valued or not even closed.

eess.SY↗

arXiv2019

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

physics.app-ph↗

arXiv2018

All-2D Material Inkjet-Printed Capacitors: Towards Fully-Printed Integrated Circuits

A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates. In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 \pm 0.3 nF cm^(-2) for a dielectric thickness of \sim 3 μm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 \pm 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 \pm 0.3 MV cm^(-1). Fully printed capacitors with sub-/mu m hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.

physics.app-ph↗

arXiv2017

Thermal conductivity reduction in rough silicon nanomembranes

Nanostructured silicon is a promising material for thermoelectric conversion, because the thermal conductivity in silicon nanostructures can be strongly reduced with respect to that of bulk materials. We present thermal conductivity measurements, performed with the 3$ω$ technique, of suspended monocrystalline silicon thin films (nanomembranes or nanoribbons) with smooth and rough surfaces. We find evidence for a significant effect of surface roughness on phonon propagation: the measured thermal conductivity for the rough structures is well below that predicted by theoretical models which take into account diffusive scattering on the nanostructure walls. Conversely, the electrical conductivity appears to be substantially unaffected by surface roughness: the measured resistance of smooth and rough nanostructures are comparable, if we take into account the geometrical factors. Nanomembranes are more easily integrable in large area devices with respect to nanowires and are mechanically stronger and able to handle much larger electrical currents (thus enabling the fabrication of thermoelectric devices that can supply higher power levels with respect to current existing solutions).

cond-mat.mes-hall↗

arXiv2014

High-performance solution of the transport problem in a graphene armchair structure with a generic potential

We propose an efficient numerical method to study the transport properties of armchair graphene ribbons in the presence of a generic external potential. The method is based on a continuum envelope-function description with physical boundary conditions. The envelope functions are computed in the reciprocal space, and the transmission is then obtained with a recursive scattering matrix approach. This allows a significant reduction of the computational time with respect to finite difference simulations.

cond-mat.mes-hall↗

arXiv2013

Symmetry-dependent transport behavior of graphene double dots

By means of an envelope function analysis, we perform a numerical investigation of the conductance behavior of a graphene structure consisting of two regions (dots) connected to the entrance and exit leads through constrictions and separated by a potential barrier. We show that the conductance of the double dot depends on the symmetry of the structure and that this effect survives also in the presence of a low level of disorder, in analogy of what we had previously found for a double dot obtained in a semiconductor heterostructure. In graphene, this phenomenon is less dramatic and, in particular, conductance is not enhanced by the addition of symmetric constrictions with respect to that of the barrier alone.

cond-mat.mes-hall↗

arXiv2013

Sinc-based method for an efficient solution in the direct space of quantum wave equations with periodic boundary conditions

The solution of differential problems, and in particular of quantum wave equations, can in general be performed both in the direct and in the reciprocal space. However, to achieve the same accuracy, direct-space finite-difference approaches usually involve handling larger algebraic problems with respect to the approaches based on the Fourier transform in reciprocal space. This is the result of the errors that direct-space discretization formulas introduce into the treatment of derivatives. Here, we propose an approach, relying on a set of sinc-based functions, that allows us to achieve an exact representation of the derivatives in the direct space and that is equivalent to the solution in the reciprocal space. We apply this method to the numerical solution of the Dirac equation in an armchair graphene nanoribbon with a potential varying only in the transverse direction.

cond-mat.mes-hall↗

arXiv2013

Effect of potential fluctuations on shot noise suppression in mesoscopic cavities

We perform a numerical investigation of the effect of the disorder associated with randomly located impurities on shot noise in mesoscopic cavities. We show that such a disorder becomes dominant in determining the noise behavior when the amplitude of the potential fluctuations is comparable to the value of the Fermi energy and for a large enough density of impurities. In contrast to existing conjectures, random potential fluctuations are shown not to contribute to achieving the chaotic regime whose signature is a Fano factor of 1/4, but, rather, to the diffusive behavior typical of disordered conductors. In particular, the 1/4 suppression factor expected for a symmetric cavity can be achieved only in high-quality material, with a very low density of impurities. As the disorder strength is increased, a relatively rapid transition of the suppression factor from 1/4 to values typical of diffusive or quasi-diffusive transport is observed. Finally, on the basis of a comparison between a hard-wall and a realistic model of the cavity, we conclude that the specific details of the confinement potential have a minor influence on noise.

cond-mat.mes-hall↗

arXiv2013

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the Non-Equilibrium Green's Functions (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased, and by tuning the density of chemical dopants the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.

cond-mat.mes-hall↗

arXiv2013

Is the regime with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimensions?

We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental results do not provide a conclusive result. On the basis of our numerical analysis, we conclude that it is quite difficult to achieve diffusive transport over a reasonably wide parameter range, unless the device dimensions are increased up to the macroscopic scale. In addition, in the case of one-dimensional disorder, some mechanism capable of mode-mixing has to be present in order to reach or even approach the diffusive regime.

cond-mat.mes-hall↗

arXiv2011

Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation

We consider a single layer graphene nanoribbon with armchair edges in a longitudinally constant external potential and point out that its transport properties can be described by means of an effective non-Hermitian Hamiltonian. We show that this system has some features typical of dissipative systems, namely the presence of exceptional points and of PT-symmetry breaking, although it is not dissipative.

cond-mat.mes-hall↗

arXiv2011

The k.p method and its application to graphene, carbon nanotubes and graphene nanoribbons: the Dirac equation

The k.p method is a semi-empirical approach which allows to extrapolate the band structure of materials from the knowledge of a restricted set of parameters evaluated in correspondence of a single point of the reciprocal space. In the first part of this review article we give a general description of this method, both in the case of homogeneous crystals (where we consider a formulation based on the standard perturbation theory, and Kane's approach) and in the case of non-periodic systems (where, following Luttinger and Kohn, we describe the single-band and multi-band envelope function method and its application to heterostructures). The following part of our review is completely devoted to the application of the k.p method to graphene and graphene-related materials. Following Ando's approach, we show how the application of this method to graphene results in a description of its properties in terms of the Dirac equation. Then we find general expressions for the probability density and the probability current density in graphene and we compare this formulation with alternative existing representations. Finally, applying proper boundary conditions, we extend the treatment to carbon nanotubes and graphene nanoribbons, recovering their fundamental electronic properties.

cond-mat.mes-hall↗

arXiv2007

A novel choice of the graphene unit vectors, useful in zone-folding computations

The dispersion relations of carbon nanotubes are often obtained cross-sectioning those of graphene (zone-folding technique) in a rectangular region of the reciprocal space, where it is easier to fold the resulting relations into the nanotube Brillouin zone. We propose a particular choice of the unit vectors for the graphene lattice, which consists of the symmetry vector and the translational vector of the considered carbon nanotube. Due to the properties of the corresponding unit vectors in the reciprocal space, this choice is particularly useful for understanding the relationship between the rectangular region where the folding procedure is most easily applied and the overall graphene reciprocal space. Such a choice allows one to find, from any graphene wave vector, the equivalent one inside the rectangular region in a computationally inexpensive way. As an example, we show how the use of these unit vectors makes it easy to limit the computation to the bands nearest to the energy maxima and minima when determining the nanotube dispersion relations from those of graphene with the zone-folding technique.

cond-mat.mtrl-sci↗