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Matthew Borselli

Publications and source records attributed to Matthew Borselli.

10 recordsLinked to original sources

Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots

Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.

cond-mat.mes-hall

Accurate measurement of scattering and absorption loss in microphotonic devices

We present a simple measurement and analysis technique to determine the fraction of optical loss due to both radiation (scattering) and linear absorption in microphotonic components. The method is generally applicable to optical materials in which both nonlinear and linear absorption are present, and requires only limited knowledge of absolute optical power levels, material parameters, and the structure geometry. The technique is applied to high quality factor (Q=1-5 X 10^6) silicon-on-insulator microdisk resonators. It is determined that linear absorption can account for more than half the total optical loss in the high-Q regime of these devices.

physics.optics

Measuring the role of surface chemistry in silicon microphotonics

The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the gate oxide thickness of modern transistors is roughly 5 atomic layers, with 8 metal wire layers required to transport all the signals within a microprocessor. In addition to the increasing latency of such reduced-dimension metal wires, further "Moore's Law" scaling of transistor cost and density is predicted to saturate in the next decade. As a result, silicon-based microphotonics is being explored for the routing and generation of high-bandwidth signals. In comparison to the extensive knowledge of the electronic properties of the Si/SiO2 interface, little is known about the optical properties of Si surfaces used in microphotonics. In this Letter, we explore the optical properties of the Si surface in the telecommunication-relevant wavelength band of 1400-1600 nm. Utilizing a high quality factor (Q ~ 1.5x10^6) optical microresonator to provide sensitivity down to a fractional surface optical loss of 10^-7, we show that optical loss within Si microphotonic components can be dramatically altered by Si surface preparation, with fraction loss of 2 x 10^-5 measured for chemical oxide surfaces as compared to <2 x 10^-6 for hydrogen-terminated Si surfaces. These results indicate that the optical properties of Si surfaces can be significantly and reversibly altered by standard microelectronics treatments, and that stable, high optical quality surface passivation layers will be critical in future Si micro- and nano-photonic systems.

physics.optics

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)^3 while maintaining radiation-limited Qs in excess of 10^5. Microdisks of diameter D=2 microns are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with Veff ~2 (lambda/n)^3, Qs as high as 1.2 x 10^5 are measured passively in the 1.4 micron band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 micron band, with room temperature, continuous-wave thresholds as low as 1 microWatt of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi~16% and out-coupling efficiency in excess of 28%.

physics.optics

Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (lambda~1200 nm). Measurements in the 1400 nm wavelength band on microdisks of diameter D = 4.5 microns show that these structures support modes with cold-cavity quality factors as high as 360,000. DWELL-containing microdisks are then studied through optical pumping at room temperature. Pulsed lasing at lambda ~ 1200 nm is seen for cavities containing a single layer of InAs dots, with threshold values of ~ 17 microWatts, approaching the estimated material transparency level. Room-temperature continuous wave operation is also observed.

quant-ph

An optical fiber-based probe for photonic crystal microcavities

We review a novel method for characterizing both the spectral and spatial properties of resonant cavities within two-dimensional photonic crystals (PCs). An optical fiber taper serves as an external waveguide probe whose micron-scale field is used to source and couple light from the cavity modes, which appear as resonant features in the taper's wavelength-dependent transmission spectrum when it is placed within the cavity's near field. Studying the linewidth and depth of these resonances as a function of the taper's position with respect to the resonator produces quantitative measurements of the quality factor Q and modal volume Veff of the resonant cavity modes. Polarization information about the cavity modes can be obtained by studying their depths of coupling when the cavity is probed along different axes by the taper. This fiber-based technique has been used to measure Q ~ 40,000 and Veff ~ 0.9 cubic wavelengths in a graded square lattice PC microcavity fabricated in silicon. The speed and versatility of this fiber-based probe is highlighted, and a discussion of its applicability to other wavelength-scale resonant elements is given.

physics.optics

Rayleigh scattering, mode coupling, and optical loss in silicon microdisks

High refractive index contrast optical microdisk resonators fabricated from silicon-on-insulator wafers are studied using an external silica fiber taper waveguide as a wafer-scale optical probe. Measurements performed in the 1500 nm wavelength band show that these silicon microdisks can support whispering-gallery modes with quality factors as high as 5.2 x 10^5, limited by Rayleigh scattering from fabrication induced surface roughness. Microdisks with radii as small as 2.5 microns are studied, with measured quality factors as high as 4.7 x 10^5 for an optical mode volume of 5.3 cubic wavelengths in the material.

physics.optics

Efficient input and output fiber coupling to a photonic crystal waveguide

The efficiency of evanescent coupling between a silica optical fiber taper and a silicon photonic crystal waveguide is studied. A high reflectivity mirror on the end of the photonic crystal waveguide is used to recollect, in the backwards propagating fiber mode, the optical power that is initially coupled into the photonic crystal waveguide. An outcoupled power in the backward propagating fiber mode of 88% of the input power is measured, corresponding to a lower bound on the coupler efficiency of 94%.

physics.optics

Optical-fiber based measurement of an ultra-small volume high-Q photonic crystal microcavity

A two-dimensional photonic crystal semiconductor microcavity with a quality factor Q ~ 40,000 and a modal volume Veff ~ 0.9 cubic wavelengths is demonstrated. A micron-scale optical fiber taper is used as a means to probe both the spectral and spatial properties of the cavity modes, allowing not only measurement of modal loss, but also the ability to ascertain the in-plane localization of the cavity modes. This simultaneous demonstration of high-Q and ultra-small Veff in an optical microcavity is of potential interest in quantum optics, nonlinear optics, and optoelectronics. In particular, the measured Q and Veff values could enable strong coupling to both atomic and quantum dot systems in cavity quantum electrodynamics.

quant-ph

Probing the dispersive and spatial properties of planar photonic crystal waveguide modes via highly efficient coupling from optical fiber tapers

The demonstration of an optical fiber based probe for efficiently exciting the waveguide modes of high-index contrast planar photonic crystal (PC) slabs is presented. Utilizing the dispersion of the PC, fiber taper waveguides formed from standard silica single-mode optical fibers are used to evanescently couple light into the guided modes of a patterned silicon membrane. A coupling efficiency of approximately 95% is obtained between the fiber taper and a PC waveguide mode suitably designed for integration with a previously studied ultra-small mode volume high-Q PC resonant cavity [1]. The micron-scale lateral extent and dispersion of the fiber taper is also used as a near-field spatial and spectral probe to study the profile and dispersion of PC waveguide modes. The mode selectivity of this wafer-scale probing technique, together with its high efficiency, suggests that it will be useful in future quantum and non-linear optics experiments employing planar PCs.

quant-ph