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Matthew D. Watson

Publications and source records attributed to Matthew D. Watson.

At least 19 recordsLinked to original sources

BCS-BEC crossover driven by small Fermi pockets of a high-Tc cuprate superconductor

Fermi arcs observed in underdoped cuprates have sparked debate over whether they represent segments of a large Fermi surface or small Fermi pockets. This ambiguity has long hindered their classification as either the conventional Bardeen-Cooper-Schrieffer (BCS) regime or the strongly coupled Bose-Einstein condensation (BEC) crossover limit. Here, using angle-resolved photoemission spectroscopy and quantum oscillations, we demonstrate the coexistence of a small Fermi pocket and a large superconducting gap in the clean inner CuO2 layers of the four-layer cuprate Ba2Ca3Cu4O8(F,O)2. This coexistence constitutes a hallmark of the BCS-BEC crossover and has remained elusive for decades. Despite the presence of antiferromagnetic (AF) order, the superconducting gap in the small pocket is remarkably large, yielding a gap-to-Fermi-energy ratio (Delta_pocket/e_F ~ 0.6) and a critical-to-Fermi-temperature ratio (Tc/TF ~ 1.3) that reach the theoretical upper bound for two-dimensional superconductivity. Unexpectedly, this BCS-BEC crossover emerges not as the carrier density decreases but as it increases, abruptly within a narrow doping range of less than 1%. These results provide a long-sought microscopic foundation for the d-wave pairing mechanism in doped AF-Mott insulators.

cond-mat.supr-con

Change in charge density wave order beyond the Lifshitz transition in 2H-Ta\textsubscript{1$\pm\delta$}S\textsubscript{2}

We investigate electronic instabilities in 2H-TaS\textsubscript{2} and a self-intercalated variant, 2H$^\dagger$-Ta\textsubscript{1+$\delta$}S\textsubscript{2}. In conventional samples, which we determine to be slightly hole-doped, spectral gaps and backfolded features are found as fingerprints of the $3\times3$ charge density wave (CDW). Notably, the backfolded features emerge only at a temperatures below $T\approx$~65~K, substantially lower than the established CDW temperature of 78~K, suggesting an incommensurate-commensurate lock-in transition analogous to the phenomenology of the 2H-TaSe\textsubscript{2}. In contrast, the self-intercalated 2H$^\dagger$ sample exhibits substantial electron doping and signatures of a novel \tworootthree CDW. Using \textit{ab initio} calculations of the phonon spectrum, we demonstrate that the \threebythree instability ($\mathbf{q}=\sfrac{2}{3}\mathbf{\Gamma M}$) is highly sensitive to band filling. Furthermore, with increased interlayer spacing, a competing soft phonon mode emerges near $\mathbf{q}=\sfrac{1}{2}\mathbf{\Gamma K}$, corresponding to the superstructure observed in the 2H$^\dagger$ phase, although in our calculations this instability arises under hole doping rather than the electron doping inferred experimentally. These results establish band filling and interlayer spacing as key control parameters for CDW ordering vectors in 2H-TaS\textsubscript{2}, and highlight a route to engineering electronic instabilities in a prototypical layered material.

cond-mat.str-el

Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene

Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole asymmetry: correlated states on the hole-doped side emerge at small displacement fields, whereas the fractional quantum anomalous Hall effect (FQAHE) is observed exclusively on the electron-doped side under large displacement fields. This stark asymmetry highlights the need to understand how flat bands evolve with displacement fields. Here, we directly visualize the field-induced electron-hole asymmetric band flattening in rhombohedral pentalayer graphene (R5G) using nanospot angle-resolved photoemission spectroscopy with electrostatic gating. Beyond gap opening and spectral weight redistribution indicative of layer polarization, the gating field drives a strongly asymmetric modification of the flat bands: the flat valence band (FVB) evolves into an M-shaped dispersion at high field, whereas the flat conduction band (FCB) progressively flattens with increasing field. Comparison with calculations identifies critical parameters governing the band curvature of R5G, from which the resulting finite Berry curvature and near-ideal quantum geometry support the emergence of topological phases under electron doping at large fields. These results establish a direct link between the asymmetric phase diagram, band structure evolution, and quantum geometry, providing a microscopic framework for understanding correlated and topological phases in rhombohedral graphene.

cond-mat.mes-hall

Bulk and surface electronic structure of MoAlB(010)

The bulk and surface electronic structure of MoAlB(010) is studied by a combination of angle-resolved photoemission spectroscopy and density functional calculations. The observed bulk Fermi-level crossings agree with the previously reported bulk Fermi surface of the material. Additionally, we find several surface states in the wide projected bulk band gaps around the Fermi energy. The surface states differ in their stability under residual-gas exposure in the vacuum system and in the magnitude of their Rashba-type spin-orbit splitting. We explain this in terms of their elemental and orbital character. A surface state arising from Al dangling bonds is sensitive to surface contamination, whereas a mainly Mo-derived surface state exhibits the stronger spin-orbit splitting. The surface states show symmetry-enforced crossings near the $\bar{\mathrm{S}}$ point of the surface Brillouin zone. These are protected by the mirror-symmetry elements of the p2mm wallpaper group.

cond-mat.mtrl-sci

Suppression of Spectral Gap and Flat Bands on a Cuprate Superconductor Side-Surface

Side surfaces of cuprate superconductors are expected to display a suppressed $d$-wave order parameter and zero-energy topological flat bands with a large density of states, making them susceptible to symmetry broken orders. Yet such surfaces have never been investigated with momentum-resolved, surface-sensitive probes, because high-temperature superconductors rarely cleave along them. Using focused-ion-beam milling to define a controlled breaking point, we expose pristine (110) side surfaces of overdoped La$_{2-x}$Sr$_x$CuO$_4$ ($x=0.22$) suitable for angle-resolved photoemission. We observe the suppression of the superconducting spectral gap within our energy resolution ($\sim 4~\mathrm{meV}$), and surprisingly, the expected zero-energy flat band peak is also suppressed, despite the high topographic quality of the surface. Self-consistent Bogoliubov--de~Gennes calculations show that the measured geometric roughness of the cleaved surface is too weak to eliminate these modes. The calculations further demonstrate that bulk inhomogeneities characteristic of high-temperature superconductors, modelled as moderate Anderson-type disorder, can broaden the flat-band states beyond detectability. Our results provide the first momentum-resolved view of the electronic structure on a cuprate side surface and reveal disorder as the key factor currently preventing appearance of flat bands and their associated correlated orders.

cond-mat.supr-con

Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

Atomic-scale control over band alignment in single-layer lateral heterostructures (LHSs) of dissimilar transition metal dichalcogenides (TMDCs) is critical for nextgeneration electronic, optoelectronic, and quantum technologies. However, direct experimental access to interfacial electronic states with nanometer precision remains a significant challenge. Here, we employ angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) to directly map the epitaxial alignment and valence band evolution across MoSe2-WSe2 LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets, in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

cond-mat.mes-hall

Moir\'e-modulated $\Gamma$ valley in twisted bilayer and twisted double-bilayer MoTe$_2$

Twisted MoTe$_2$ hosts intriguing correlated quantum phenomena including the fractional quantum anomalous Hall effect in twisted bilayer (t-BL) MoTe$_2$ near 3.7$^\circ$, which is sensitive to the twist angle and moir\'e superlattices. Here, we directly visualize the twist-angle-modulated electronic structure of t-BL and twisted double-bilayer (t-DBL) near this critical angle. We find that the moir\'e superlattice not only modifies the relative energy between $\Gamma$ and K valleys in t-BL MoTe$_2$, but also strongly reconstructs the $\Gamma$ valley for both t-BL and t-DBL. Specifically, the deep $p_z$-derived band at $\Gamma$ exhibits a distinct splitting that systematically varies with increasing twist angle. Theoretical analysis suggests that this modulation arises from the twist-angle-dependent lattice relaxation, especially interfacial corrugations. Our work directly visualizes the moir\'e-modulated electronic structure and provides key spectroscopic information of lattice relaxation and interlayer interactions underlying the physics of twisted MoTe$_2$.

cond-mat.str-el

The two conduction bands of monolayer CrSBr on Au

We report the electronic structure of monolayer CrSBr exfoliated onto mica template-stripped gold substrates. Angle-resolved photoemission spectroscopy reveals charge transfer from the substrate, populating the conduction band of monolayer CrSBr, accompanied by a pronounced reduction in the quasiparticle band gap. Furthermore, we observe two separate conduction bands that exhibit a splitting at the X point. This indicates a breaking of glide-mirror symmetry, which in the bulk or in a free-standing monolayer protects the band degeneracies at the Brillouin zone boundary. Our results demonstrate that ultraflat gold substrates do more than modify carrier densities and screening: they can lift symmetry-protected degeneracies and thus fundamentally reshape the band topology of 2D materials.

cond-mat.str-el

Charge transfer empties the flat band in 4H$_b$-TaS$_2$ -- except at the surface

The 4H\textsubscript{b} polytype of TaS$_2$ is a natural heterostructure of H and T-type layers. Intriguing recent evidence points towards a possibly chiral superconducting ground state, unlike the superconductivity found in other polytypes where the T layers are absent, requiring understanding of the possible contributions of electrons from the T layers. Here we use micro-focused angle resolved photoemission spectroscopy to reveal that the T termination of the 4H\textsubscript{b} structure is metallic, but a subsurface T layer -- seen below an H termination and thus more representative of the bulk case -- is gapped. The results imply a complete charge transfer of 1 electron per 13 Ta from the T to adjacent H layers in the bulk, but an incomplete charge transfer at the T termination, yielding a metallic Fermi surface with a planar-chiral character. A similar metallic state is found in an anomalous region with likely T-H-H' stacking at the surface. Our results exclude cluster Mott localisation in either the bulk or surface of 4H$_b$-TaS$_2$ and point to a scenario of superconductivity arising from Josephson-like tunneling between the H layers.

cond-mat.supr-con

Chiral charge density wave in 4Hb- and 1T-TaS$_2$: The Role of interlayer coupling

We use micro-angle-resolved photoemission spectroscopy (micro-ARPES) to investigate chiral charge density waves (CDWs) in 4Hb-TaS$_2$ with micron-scale spatial resolution. In the 1T layers of 4Hb-TaS$_2$, we uncover coexisting left- and right-handed CDW domains and resolve four distinct spectral patterns arising from the interplay of chirality and rotational stacking. In contrast, bulk 1T-TaS$_2$ exhibits a uniform chirality. In addition, 4Hb-TaS$_2$ shows negligible out-of-plane dispersion of the 1T-derived bands, in contrast to the pronounced interlayer coupling observed in bulk 1T-TaS$_2$. Density functional theory (DFT) calculations corroborate this picture, revealing that the interlayer interaction of the chiral order in 4Hb-TaS$_2$ is nearly two orders of magnitude weaker than in the 1T polytype. Our findings establish 4Hb-TaS$_2$ as a quasi-two-dimensional platform for exploring tunable chiral CDW phenomena.

cond-mat.str-el

Electronic structure of the interface between Au and WSe2

Understanding the interface between metals and two-dimensional materials is critical for their application in electronics and for the development of metal-mediated exfoliation of large area monolayers. Studying the intricate interactions at the interface requires model systems that enable control of the roughness, purity, and crystallinity of the metal surface. Here, we investigate the layer-dependent electronic structure of WSe_2 on template-stripped gold substrates fabricated using both silicon and mica templates, giving crystallographically disordered and Au(111) ordered surfaces, respectively, and contrast these findings with ab initio predictions. We observe strong hybridization around the Brillouin zone centre at $\overline{\Gamma}$, indicating a covalent admixture in the gold-\WSe~interaction, and band shifts that suggest charge rearrangement at the Au(111) / WSe_2 interface. Core-level spectroscopy shows a single chemical environment for the interfacial WSe_2 layer on the template-stripped gold, distinct from the subsequent layers. These results reveal a mixture of van der Waals and covalent interactions, best described as a covalent-like quasi-bonding with intermediate interaction strength.

cond-mat.mtrl-sci

Superconducting coherence boosted by outer-layer metallic screening in multilayered cuprates

In multilayered high-Tc cuprates with three or more CuO2 layers per unit cell, the inner CuO2 planes (IPs) are spatially separated from the dopant layers and thus remain cleaner than the outer planes (OPs). While both interlayer coupling and the presence of clean IPs have been proposed as key factors enhancing superconductivity, their individual roles have been difficult to disentangle, as IPs and OPs typically become superconducting simultaneously. Here we investigate five-layer (Cu,C)Ba2Ca4Cu5Oy (Cu1245) with Tc = 78 K and three-layer Ba2Ca2Cu3O6(F,O)2 (F0223) with Tc = 100 K using ARPES, and uncover an unprecedented situation, in which only the IPs become superconducting while the OPs remain metallic at low temperatures. Model calculations indicate that more than 95% of the OP wavefunction remains confined to OP itself, with minimal hybridization from the superconducting IPs. In particular, we experimentally realize an ideal configuration: a single superconducting CuO2 layer sandwiched between heavily overdoped metallic outer layers, which screen disorder originating from the dopant layers. Strikingly, this clean CuO2 layer exhibits the largest superconducting gap among all known cuprates and coherent Bogoliubov peaks extending beyond the antiferromagnetic zone boundary -- long regarded as the boundary beyond which coherence vanishes in heavily underdoped cuprates. Furthermore, a widely extended coherent flat band emerges at the Brillouin zone edge, overcoming the pseudogap damping effect. Our results introduce a new physical parameter, the degree of screening, to investigate the competition between superconductivity and the pseudogap, potentially shedding new light on its origin. The nearly disorder-free superconducting CuO2 layers offer a model platform for bridging the gap between disordered real materials and idealized theoretical models, which generally neglect disorder effects.

cond-mat.supr-con

Electronic structure of monolayer-CrTe$_2$: an antiferromagnetic 2D van der Waals material

Magnetic van der Waals materials are an important building block to realize spintronic functionalities in heterostructures of two-dimensional (2D) materials. Yet, establishing their magnetic and electronic properties and the interrelationship between the magnetic ground state and electronic structure is often challenging because only a limited number of techniques can probe magnetism and electronic structure on length scales of tens to hundreds of nanometers. Chromium chalcogenides are a class of 2D magnetic materials for which a rich interplay between structure and magnetism has been predicted. Here, we combine angle-resolved photoemission and quasi-particle interference imaging to establish the electronic structure of a monolayer of CrTe$_2$ on graphite. From a comparison of model calculations with spectroscopic mapping using angle-resolved photoemission spectroscopy and scanning tunnelling microscopy we establish the magnetic ground state and the low energy electronic structure. We demonstrate that the band structure of monolayer CrTe$_2$ is captured well by density functional theory (DFT) in a DFT+U framework when a Coulomb repulsion of $U=2.5\mathrm{eV}$ is accounted for.

cond-mat.mtrl-sci

Moir\'e enhanced flat band in rhombohedral graphene

The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene on BN superlattice (aligned R5G/BN), where the topological flat band is modulated by the moir\'e potential. However, intriguingly, the FQAHE is observed only when electrons are pushed away from the moir\'e interface. The apparently opposite implications from these experimental observations, along with different theoretical models, have sparked intense debates regarding the role of the moir\'e potential. Unambiguous experimental observation of the topological flat band as well as moir\'e bands with energy and momentum resolved information is therefore critical to elucidate the underlying mechanism. Here by performing nanospot angle-resolved photoemission spectroscopy (NanoARPES) measurements, we directly reveal the topological flat band electronic structures of R5G, from which key hopping parameters essential for determining the fundamental electronic structure of rhombohedral graphene are extracted. Moreover, a comparison of electronic structures between aligned and non-aligned samples reveals that the moir\'e potential plays a pivotal role in enhancing the topological flat band in the aligned sample. Our study provides experimental guiding lines to narrow down the phase space of rhombohedral graphene, laying an important foundation for understanding exotic quantum phenomena in this emerging platform.

cond-mat.mes-hall

Tunable Octdong and Spindle-Torus Fermi Surfaces in Kramers Nodal Line Metals

It has recently been proposed that all achiral non-centrosymmetric crystals host so-called Kramers nodal lines, which are doubly degenerate band crossings connecting time-reversal invariant momenta in the Brillouin zone that arise due to spin-orbit coupling. When Kramers nodal lines intersect the Fermi level, they form exotic three-dimensional Fermi surfaces which is certain configurations can be fully described by two-dimensional massless Dirac fermions. These Fermi surfaces are predicted to realize a quantized optical conductivity with multiple quantized levels a large light- and field-induced anomalous Hall effect. However, until now, no Kramers nodal line metal with such unconventional Fermi surfaces has been experimentally observed. Here, we extend the search for Kramers nodal line metals beyond the previously considered case in which the Fermi surfaces enclose a single time-reversal invariant momentum. Using angle-resolved photoelectron spectroscopy measurements and ab-initio calculations, we present evidence that the 3R polytypes of TaS$_2$ and NbS$_2$ are Kramers nodal line metals with open Octdong and Spindle-torus Fermi surfaces, respectively. We show that by reducing the band filling, a transition between these two configurations can be observed. Moreover, our data suggests a naturally occurring size quantization effect of inclusions of 3R-TaS$_2$ in commercially available 2H-TaS$_2$ crystals, which could enable the observation of quantized optical conductivity. Finally, since the open Fermi-surfaces encircle two time-reversal invariant momenta each, we predict a phase transition from a Kramers nodal line metal to a conventional metal by strain or uniaxial pressure. Our work establishes the 3R phase of metallic transition metal dichalcogenides as a tunable platform to explore new phenomena expected from exotic Fermi surfaces in Kramers nodal line metals.

cond-mat.mtrl-sci

Robust spin splitting and fermiology in a layered altermagnet

Altermagnetism defies conventional classifications of collinear magnetic phases, standing apart from ferromagnetism and antiferromagnetism with its unique combination of spin-dependent symmetries, net-zero magnetization, and anomalous Hall transport. Although altermagnetic states have been realized experimentally, their integration into functional devices has been hindered by the structural rigidity and poor tunability of existing materials. First, through cobalt intercalation of the superconducting 2H-NbSe$_2$ polymorph, we induce and stabilize a robust altermagnetic phase and using both theory and experiment, we directly observe the lifting of Kramers degeneracy. Additionally, we present spectroscopic insight into a previously hinted low-temperature phase, and provide evidence of its electronic origin. While shedding light on overlooked aspects of altermagnetism, these findings open pathways to spin-based technologies and lay a foundation for advancing the emerging field of altertronics.

cond-mat.str-el

Dichotomy of electron-phonon interactions in the delafossite PdCoO$_2$: From weak bulk to polaronic surface coupling

The metallic delafossites host ultra-high mobility carriers in the bulk, while at their polar surfaces, intrinsic electronic reconstructions stabilise markedly distinct electronic phases, from charge-disproportionated insulators, to Rashba-split heavy-hole gases and ferromagnetic metals. The understanding of these phases has been strongly informed by surface spectroscopic measurements, but previous studies have been complicated by the presence of spatially varying terminations of the material surface. Here, we demonstrate the potential of microscopic-area angle-resolved photoemission to overcome these challenges. Our measurements of the model compound PdCoO$_2$ yield extremely high-quality spectra of the electronic structure, which allows us to place new experimental constraints on the weak electron-phonon coupling in the bulk of PdCoO$_2$, while revealing much stronger interactions at its surfaces. While the CoO$_2$-terminated surface exhibits a conventional weak-coupling behavior, our measurements reveal surprising spectroscopic signatures of polaron formation at the Pd-terminated surface, despite its pronounced metallicity. Together, our findings reveal how mode and symmetry-selective couplings can markedly tune the electron-phonon interactions in a single host material, here opening routes to stabilise surprisingly persistent polaronic quasiparticles.

cond-mat.mtrl-sci

Momentum-Resolved Fingerprint of Mottness in Layer-Dimerized Nb$_3$Br$_8$

In a well-ordered crystalline solid, insulating behaviour can arise from two mechanisms: electrons can either scatter off a periodic potential, thus forming band gaps that can lead to a band insulator, or they localize due to strong interactions, resulting in a Mott insulator. For an even number of electrons per unit cell, either band- or Mott-insulators can theoretically occur. However, unambiguously identifying an unconventional Mott-insulator with an even number of electrons experimentally has remained a longstanding challenge due to the lack of a momentum-resolved fingerprint. This challenge has recently become pressing for the layer dimerized van der Waals compound Nb$_3$Br$_8$, which exhibits a puzzling magnetic field-free diode effect when used as a weak link in Josephson junctions, but has previously been considered to be a band-insulator. In this work, we present a unique momentum-resolved signature of a Mott-insulating phase in the spectral function of Nb$_3$Br$_8$: the top of the highest occupied band along the out-of-plane dimerization direction $k_z$ has a momentum space separation of $\Delta k_z=2\pi/d$, whereas the valence band maximum of a band insulator would be separated by less than $\Delta k_z=\pi/d$, where $d$ is the average spacing between the layers. As the strong electron correlations inherent in Mott insulators can lead to unconventional superconductivity, identifying Nb$_3$Br$_8$ as an unconventional Mott-insulator is crucial for understanding its apparent time-reversal symmetry breaking Josephson diode effect. Moreover, the momentum-resolved signature employed here could be used to detect quantum phase transition between band- and Mott-insulating phases in van der Waals heterostructures, where interlayer interactions and correlations can be easily tuned to drive such transition.

cond-mat.str-el