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Matthew Frame

Publications and source records attributed to Matthew Frame.

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Signal amplification in simple metal-insulator transition devices

Signal dissipation in large-scale neural networks can lead to information loss and ultimately to computational failures, necessitating local signal amplification at neuron - synapse connections. In biological nervous systems, axons are responsible for local signal amplification. Translating axon functionality into hardware, i.e., the ability to amplify and transmit signals without loss, is non-trivial because emulating the human brain implies building networks composed of ~10 billion interconnected neurons, each requiring a dedicated compact and scalable amplifier. Here, we demonstrate signal amplification in simple two-terminal devices made of a metal-insulator transition material. By operating the devices on the verge of the phase transition and taking advantage of negative differential resistance, we achieve robust signal amplification up to a factor of ~11.5. We also demonstrate the amplification of spiking sequences generated by a real neuristor, opening new exciting opportunities for the direct integration of artificial neurons and axons. The amplification can be controlled by easily adjustable experimental parameters, including DC bias, AC excitation, series resistance, and temperature. We further propose a model that predicts the gain using readily observable transport characteristics. Our results establish a framework for developing and optimizing axon-like amplification functionalities in nonlinear electronic materials.

cond-mat.mtrl-sci

Inhibitory neuristor based on metal-to-insulator transition

Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the complexity and performance of the human brain. Volatile high-to-low resistance switching in insulator-to-metal transition (IMT) materials produces an abrupt increase in current flow, resembling neuronal excitation. This electrical excitation enables IMT materials to be driven into a neuron-like spiking self-oscillation regime using simple RC circuits. Here, we report a new type of self-oscillation dynamics that occurs in the opposite class of metal-to-insulator transition (MIT) materials. Electrical triggering of the MIT suppresses current flow, resembling neuronal inhibition. Using a prototypical MIT material, we experimentally demonstrate inhibitory-like self-oscillations in two-terminal switching devices incorporated into a simple RL circuit. Our results show robust ~0.1 - 1 MHz electric current oscillations with minimal cycle-to-cycle variation, which can be controlled by varying the applied DC voltage, temperature, and inductance. This work demonstrates a new type of inhibitory MIT-based artificial neuron that can complement the excitatory functionalities of IMT-based neuristors in biologically plausible neuromorphic systems.

cond-mat.mtrl-sci