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Matthew J. Coak

Publications and source records attributed to Matthew J. Coak.

11 recordsLinked to original sources

Emergent Polar Metal Phase in a Van der Waals Mott Magnet

We report the emergence of a two-dimensional (2D) polar metal phase in van der Waals compound FePSe$_3$ under moderate pressures. This layered material is a Mott insulator with antiferromagnetic order under ambient conditions. We show that FePSe$_3$ uniquely allows tuning a 2D correlated insulator into an exotic metal state where a loss of inversion symmetry leads to periodic polar displacements of ions, within a conducting phase - a polar metal. Our combined synchrotron and neutron diffraction data allow us to present a long-sought, unambiguous high-pressure structural model and show the polar displacements of this new phase. We also observe the suppression of magnetic ordering at the insulator-to-metal transition correspondent with this structural change. Our work outlines a comprehensive temperature-pressure phase diagram of FePSe$_3$, combining detailed structural, magnetic and transport data. The high-pressure phase exhibits activated semiconductor behavior at high temperatures, a $T^2$-dependence in its resistivity at lower temperatures - despite the conditions required for a `good metal' Fermi-Liquid description not being met in this case - and a low-temperature resistivity upturn which is suppressed as the system is tuned away from the concomitant transitions. The realisation of a tunable 2D polar metal state in FePSe$_3$ due to the loss of its inversion symmetry combined with pressure-induced metallicity offers a promising new platform to investigate this exotic phase at accessible pressures.

cond-mat.str-el

Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2

Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a single-material device formed of van-der-Waals topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, we also demonstrate multi-level states, switched by electrical current, which can dramatically enhance the information capacity density and reduce computing costs. Thus, our observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of van-der-Waals magnets in the field of spin memory and spintronics.

cond-mat.mtrl-sci

Gigantic current control of coercive field and magnetic memory based on nm-thin ferromagnetic van der Waals Fe3GeTe2

Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase transition temperature. We report that surprisingly an in-plane current can tune the magnetic state of nm-thin van der Waals ferromagnet Fe3GeTe2 from a hard magnetic state to a soft magnetic state. It is the direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe3GeTe2. And we further demonstrate a working model of a new nonvolatile magnetic memory based on the principle of our discovery in Fe3GeTe2, controlled by a tiny current. Our findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impacts on the future development of spintronic and magnetic memory.

cond-mat.mtrl-sci

Direct evidence from high-field magnetotransport for a dramatic change of quasiparticle character in van der Waals ferromagnet Fe$_{3-x}$GeTe$_2$

Magnetometry and magnetoresistance (MR) data taken on the van der Waals ferromagnet Fe$_{3-x}$GeTe$_2$ (FGT) reveal three distinct contributions to the MR: a linear negative component, a contribution from closed Fermi-surface orbits, and a $H^2$ enhancement linked to a non-coplanar spin arrangement. Contrary to earlier studies on FGT, by accounting for the field dependence of the anomalous Hall effect, we find that the ordinary Hall coefficient decreases markedly below 80 K, indicating a significant change in character of the electrons and holes on the Fermi surface at this temperature. The resulting altered ground state eventually causes the Hall coefficient to reverse sign at 35 K. Our Hall data support the proposal that Kondo-lattice behavior develops in this $d$-electron material below 80 K. Additional evidence comes from the negative linear component of the MR, which arises from electron-magnon scattering with an atypical temperature dependence attributable to the onset of Kondo screening.

cond-mat.str-el

Comparative structural evolution under pressure of powder and single crystals of the layered antiferromagnet FePS$_3$

The layered antiferromagnet FePS$_3$ has been shown to undergo a structural transition under pressure linked to an insulator-metal transition, with two incompatible models previously proposed for the highest-pressure structure. We present a study of the high-pressure crystal structures of FePS$_3$ using both single-crystal and powder x-ray diffraction. We show that the highest pressure transition involves a collapse of the inter-planar spacing of this material, along with an increase in symmetry from a monoclinic to a trigonal structure, to the exclusion of other models. The extent of this volume collapse is shown to be sensitive to the presence of a helium pressure medium in the sample environment, indicating that consideration of such experimental factors is important for understanding high-pressure behaviours in this material.

cond-mat.str-el

Kagome van-der-Waals Pd3P2S8 with flat band

With the advanced investigations into low-dimensional systems, it has become essential to find materials having interesting lattices that can be exfoliated down to monolayer. One particular important structure is a kagome lattice with its potentially diverse and vibrant physics. We report a van-der-Waals kagome lattice material, Pd3P2S8, with several unique properties such as an intriguing flat band. The flat band is shown to arise from a possible compact-localized state of all five 4d orbitals of Pd. The diamagnetic susceptibility is precisely measured to support the calculated susceptibility obtained from the band structure. We further demonstrate that Pd3P2S8 can be exfoliated down to monolayer, which ultimately will allow the possible control of the localized states in this two-dimensional kagome lattice using the electric field gating.

cond-mat.mtrl-sci

Strongly adhesive dry transfer technique for van der Waals heterostructure

That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin materials after mechanical exfoliation without chemical and mechanical degradation. Chemically inert hexagonal boron nitride (hBN) has been widely used for encapsulating and picking up vdW materials. However, due to the relatively weak adhesion of hBN, assembling vdW heterostructures based on hBN has been limited. We report a new dry transfer technique. We used two vdW semiconductors (ZnPS3 and CrPS4) to pick up and encapsulate layers for vdW heterostructures, which otherwise are known to be hard to fabricate. By combining with optimized polycaprolactone (PCL) providing strong adhesion, we demonstrated various vertical heterostructure devices, including quasi-2D superconducting NbSe2 Josephson junctions with atomically clean interface. The versatility of the PCL-based vdW stacking method provides a new route for assembling complex 2D vdW materials without interfacial degradation.

physics.app-ph

Evolution of magnetic order in van-der-Waals antiferromagnet FePS$_3$ through insulator-metal transition

Layered van-der-Waals 2D magnetic materials are of great interest in fundamental condensed-matter physics research, as well as for potential applications in spintronics and device physics. We present neutron powder diffraction data using new ultra-high-pressure techniques to measure the magnetic structure of Mott-insulating 2D honeycomb antiferromagnet FePS$_3$ at pressures up to 183 kbar and temperatures down to 80 K. These data are complemented by high-pressure magnetometry and reverse Monte Carlo modeling of the spin configurations. As pressure is applied, the previously-measured ambient-pressure magnetic order switches from an antiferromagnetic to a ferromagnetic interplanar interaction, and from 2D-like to 3D-like character. The overall antiferromagnetic structure within the $ab$ planes, ferromagnetic chains antiferromagnetically coupled, is preserved, but the magnetic propagation vector is altered from $(0\:1\:\frac{1}{2})$ to $(0\:1\:0)$, a halving of the magnetic unit cell size. At higher pressures, coincident with the second structural transition and the insulator-metal transition in this compound, we observe a suppression of this long-range-order and emergence of a form of magnetic short-range order which survives above room temperature. Reverse Monte Carlo fitting suggests this phase to be a short-ranged version of the original ambient pressure structure - with a return to antiferromagnetic interplanar correlations. The persistence of magnetism well into the HP-II metallic state is an observation in seeming contradiction with previous x-ray spectroscopy results which suggest a spin-crossover transition.

cond-mat.str-el

SquidLab -- a user-friendly program for background subtraction and fitting of magnetization data

We present an open-source program free to download for academic use with full user-friendly graphical interface for performing flexible and robust background subtraction and dipole fitting on magnetization data. For magnetic samples with small moment sizes or sample environments with large or asymmetric magnetic backgrounds, it can become necessary to separate background and sample contributions to each measured raw voltage measurement before fitting the dipole signal to extract magnetic moments. Originally designed for use with pressure cells on a Quantum Design MPMS3 SQUID magnetometer, SquidLab is a modular object-oriented platform implemented in Matlab with a range of importers for different widely-available magnetometer systems (including MPMS, MPMS-XL, MPMS-IQuantum, MPMS3 and S700X models), and has been tested with a broad variety of background and signal types. The software allows background subtraction of baseline signals, signal preprocessing, and performing fits to dipole data using Levenberg-Marquadt non-linear least squares, or a singular value decomposition linear algebra algorithm which excels at picking out noisy or weak dipole signals. A plugin system allows users to easily extend the built-in functionality with their own importers, processes or fitting algorithms. SquidLab can be downloaded, under Academic License, from the University of Warwick depository (wrap.warwick.ac.uk/129665).

physics.data-an

Bulk properties of van-der-Waals hard ferromagnet VI3

We present comprehensive measurements of the structural, magnetic and electronic properties of layered van-der-Waals ferromagnet VI$_3$ down to low temperatures. Despite belonging to a well studied family of transition metal trihalides, this material has received very little attention. We outline, from high-resolution powder x-ray diffraction measurements, a corrected room-temperature crystal structure to that previously proposed and uncover a structural transition at 79 K, also seen in the heat capacity. Magnetization measurements confirm VI$_3$ to be a hard ferromagnet (9.1 kOe coercive field at 2 K) with a high degree of anisotropy, and the pressure dependence of the magnetic properties provide evidence for the two-dimensional nature of the magnetic order. Optical and electrical transport measurements show this material to be an insulator with an optical band gap of 0.67 eV - the previous theoretical predictions of d-band metallicity then lead us to believe VI$_3$ to be a correlated Mott insulator. Our latest band structure calculations support this picture and show good agreement with the experimental data. We suggest VI$_3$ to host great potential in the thriving field of low-dimensional magnetism and functional materials, together with opportunities to study and make use of low-dimensional Mott physics.

cond-mat.str-el

Symmetry breaking and unconventional charge ordering in single crystal Na$_{2.7}$Ru$_4$O$_9$

The interplay of charge, spin, and lattice degrees of freedom in matter leads to various forms of ordered states through phase transitions. An important subclass of these phenomena of complex materials is charge ordering (CO), mainly driven by mixed-valence states. We discovered by combining the results of electrical resistivity ($ρ$), specific heat, susceptibility $χ$ (\textit{T}), and single crystal x-ray diffraction (SC-XRD) that Na$_{2.7}$Ru$_4$O$_9$ with the monoclinic tunnel type lattice (space group $C$2/$m$) exhibits an unconventional CO at room temperature while retaining metallicity. The temperature-dependent SC-XRD results show successive phase transitions with super-lattice reflections at \textbf{q}$_1$=(0, $\frac{1}{2}$, 0) and \textbf{q}$_2$=(0, $\frac{1}{3}$, $\frac{1}{3}$) below $T_{\textrm{C2}}$ (365 K) and only at \textbf{q}$_1$=(0, $\frac{1}{2}$, 0) between $T_{\textrm{C2}}$ and $T_{\textrm{C1}}$ (630 K). We interpreted these as an evidence for the formation of an unconventional CO. It reveals a strong first-order phase transition in the electrical resistivity at $T_{\textrm{C2}}$ (cooling) = 345 K and $T_{\textrm{C2}}$ (heating) = 365 K. We argue that the origin of the phase transition is due to the localized 4$d$ Ru-electrons. The results of our finding reveal an unique example of Ru$^{3+}$/Ru$^{4+}$ mixed valance heavy \textit{d}$^4$ ions.

cond-mat.str-el