SearcharxivSearch

arXiv subjects

Matthew J. Lloyd

Publications and source records attributed to Matthew J. Lloyd.

2 recordsLinked to original sources

First principles model for voids decorated by transmutation solutes: Short-range order effects and application to neutron irradiated tungsten

Understanding how properties of materials change due to nuclear transmutations is a major challenge for the design of structural components for a fusion power plant. In this study, by combining a first-principles matrix Hamiltonian approach with thermodynamic integration we investigate quasi-steady state configurations of multi-component alloys, containing defects, over a broad range of temperature and composition. The model enables simulating transmutation-induced segregation effects in materials, including tungsten where the phenomenon is strongly pronounced. Finite-temperature analysis shows that voids are decorated by Re and Os, but there is no decoration by tantalum (Ta). The difference between the elements is correlated with the sign of the short range order (SRO) parameter between impurity and vacancy species, in agreement with Atom Probe Tomography (APT) observations of irradiated W-Re, W-Os, W-Ta alloys in the solid solution limit. Statistical analyses of Re and Os impurities in vacancy-rich tungsten show that the SRO effects involving the two solutes are highly sensitive to the background concentration the species. In quaternary W-Re-Os-Vac alloys containing 1.5% Re and 0.1% Os, the SRO Re-Os parameter is negative at 1200K, driving the formation of concentrated Re and Os precipitates. Comparison with experimental Transmission Electron Microscopy (TEM) and APT data on W samples irradiated at the High Flux Reactor (HFR) shows that the model explains the origin of anomalous segregation of transmutation products (Re,Os) to vacancy clusters and voids in the high temperature limit pertinent to the operating conditions of a fusion power plant.

cond-mat.mtrl-sci

Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation

Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acquiring Raman spectra shows rapid recovery of Si-C bonding, but not a complete recovery of the unirradiated structure. Annealing irradiated SiC causes surface oxidation where unirradiated SiC does not oxidise. Comparisons are made to the apparent radiation resistance of diamond and silicon which have similar crystal structures, but are monatomic, leading to the suggestion that chemical defects are responsible for increased radiation damage in SiC.

cond-mat.mtrl-sci