arXiv subjects

Matthew J. Sellars

Publications and source records attributed to Matthew J. Sellars.

At least 19 recordsLinked to original sources

arXiv2026

90%-Efficient Optical Storage in a Rare-Earth Crystal with a Low-Loss Impedance-Matched Cavity

High-efficiency optical storage in rare-earth-ion-doped crystals is challenging because of their typically weak optical absorption,which makes cavity-enhanced memories highly sensitive to parasitic intracavity loss. Here we demonstrate a 90.1(5)% storage efficiency for coherent optical pulses in an impedance-matched cavity atomic-frequency-comb memory based on Eu3+:Y2SiO5. The Brewster-angle configuration of the crystal and fully cryogenic Fabry-Pérot cavity reduce the round-trip intracavity loss to 0.37%. Quantitative modeling shows that further improvement is limited primarily by AFC preparation and its associated dispersive response rather than by residual cavity loss,identifying the principal requirements for further approaching unity efficiency.

quant-ph↗

arXiv2023

Millisecond electron spin coherence time for erbium ions in silicon

Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications.

quant-ph↗

arXiv2023

Effect of a hybrid transition moment on Stark-modulated photon echoes in Er$^{3+}$:Y$_2$SiO$_5$

The 1538 nm ${}^4$I$_{15/2}$ - ${}^4$I$_{13/2}$ transition of Er$^{3+}$ has an unusual hybrid electric-magnetic dipole character, and signatures of the hybrid moment can be expected in coherent transient measurements. Here, we investigate the effect of the hybrid moment in both sites of Er$^{3+}$:Y$_2$SiO$_5$ on Stark-modulated photon echo measurements, showing that it results in a reduction of visibility of the modulated signal as well as phase and polarization shifts. We interpret these effects using a simple optical Bloch equation model, showing that site 1 has a strongly mixed moment and site 2 is predominantly magnetic dipole. We discuss the implications of the hybrid moment for quantum information applications of quantum memories. We also use the echo measurements to extract the Stark shift of the optical transition along three orthogonal directions, finding values between 10.50 and 11.93 kHz/(V/cm) for site 1 and 1.61 and 15.35 kHz/(V/cm) for site 2. We observe a modification of the Zeeman shift by the electric field in both sites and discuss how this may be used to electrically control Er$^{3+}$ spin qubits.

quant-ph↗

arXiv2022

Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution

Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.

quant-ph↗

arXiv2022

Optimising the Efficiency of a Quantum Memory based on Rephased Amplified Spontaneous Emission

We studied the recall efficiency as a function of optical depth of rephased amplified spontaneous emission (RASE), a protocol for generating entangled light. The experiments were performed on the $^{3}\! H_{4}$ $\rightarrow$ $^{1}\! D_{2}$ transition in the rare-earth doped crystal Pr$^{3+}$:Y$_{2}$SiO$_{5}$, using a four-level echo sequence between four hyperfine levels to rephase the emission. Rephased emission was observed for optical depths in the range of $αL$ = 0.8 to 2.0 with a maximum rephasing efficiency of 14 % observed while incorporating spin storage. This efficiency is a significant improvement over the previously reported non-classical result but is well short of the predicted efficiency. We discuss the possible mechanisms limiting the protocol's performance, and suggest ways to overcome these limits.

quant-ph↗

arXiv2022

Negative refractive index in dielectric crystals containing stoichiometric rare-earth ions

We investigate the prospect of achieving negative permittivity and permeability at optical frequencies in a dielectric crystal containing stoichiometric rare-earth ions. We derive the necessary transition linewidth, ion density and electric and magnetic oscillator strengths using a simplified model of non-interacting dipoles. We identify Erbium crystals in a magnetically ordered phase as the most promising material to meet these conditions, and describe initial optical measurements of two potential candidates, \ercl{} and ${}^7$\lierf{}, which display linewidths of 3~GHz and 250~MHz, respectively. The properties of ${}^7$\lierf{} satisfied our criterion for negative permeability.

physics.optics↗

arXiv2022

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a single 167Er3+ ion in Si. All the obtained tensors are highly anisotropic with the largest value principal axes aligning in nearly the same direction, and the trace of the lowest crystal field level g-tensor is 17.78$\pm$0.40. The results indicate that this specific Er site is likely to be a distorted cubic site that exhibits monoclinic (C1) symmetry. Finally, zero first-order-Zeeman (ZEFOZ) fields are identified for this site and could be used to reduce decoherence of hyperfine spin states in future experiments.

quant-ph↗

arXiv2021

Complete crystal field calculation of Zeeman-hyperfine splittings in europium

Computational crystal-field models have provided consistent models of both electronic and Zeeman-hyperfine structure for several rare earth ions. These techniques have not yet been applied to the Zeeman-hyperfine structure of Eu$^{3+}$ because modeling the structure of the $J=0$ singlet levels in Eu$^{3+}$ requires inclusion of the commonly omitted lattice electric quadrupole and nuclear Zeeman interactions. Here, we include these terms in a computational model to fit the crystal field levels and the Zeeman-hyperfine structure of the $^7F_0$ and $^5D_0$ states in three Eu$^{3+}$ sites: the C$_{4v}$ and C$_{3v}$ sites in CaF$_2$ and the C$_2$ site in EuCl$_3$.6H$_2$O. Close fits are obtained for all three sites which are used to resolve ambiguities in previously published parameters, including quantifying the anomalously large crystal-field-induced state mixing in the C$_{3v}$ site and determining the signs of Zeeman-hyperfine parameters in all three sites. We show that this model allows accurate prediction of properties for Eu$^{3+}$ important for quantum information applications of these ions, such as relative transition strengths. The model could be used to improve crystal field calculations for other non-Kramers singlet states. We also present a spin Hamiltonian formalism without the normal assumption of no $J$ mixing, suitable for other rare earth ion energy levels where this effect is important.

cond-mat.mtrl-sci↗

arXiv2021

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positively identified as two identical Er3+ ions in sites of at least C2 symmetry coupled via a large, 200 GHz Ising-like spin interaction and 1.5 GHz resonant optical interaction. Small non-Ising contributions to the spin interaction are attributed to distortion of the site measurable because of the high resolution of the single-ion measurement. The interactions are compared to previous measurements made using rare earth ensemble systems, and the application of this type of strongly coupled ion array to quantum computing is discussed.

quant-ph↗

arXiv2021

Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection

We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications.

quant-ph↗

arXiv2020

Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 10$^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.

physics.app-ph↗

arXiv2019

Diamond nano-pillar arrays for quantum microscopy of neuronal signals

Modern neuroscience is currently limited in its capacity to perform long term, wide-field measurements of neuron electromagnetics with nanoscale resolution. Quantum microscopy using the nitrogen vacancy centre (NV) can provide a potential solution to this problem with electric and magnetic field sensing at nano-scale resolution and good biocompatibility. However, the performance of existing NV sensing technology does not allow for studies of small mammalian neurons yet. In this paper, we propose a solution to this problem by engineering NV quantum sensors in diamond nanopillar arrays. The pillars improve light collection efficiency by guiding excitation/emission light, which improves sensitivity. More importantly, they also improve the size of the signal at the NV by removing screening charges as well as coordinating the neuron growth to the tips of the pillars where the NV is located. Here, we provide a growth study to demonstrate coordinated neuron growth as well as the first simulation of nano-scopic neuron electric and magnetic fields to assess the enhancement provided by the nanopillar geometry.

quant-ph↗

arXiv2018

NV- - N+ pair centre in 1b diamond

The study establishes that the degree of optically induced spin polarization that can be achieved for NV$^- $in 1b diamond is limited by the concentration of single substitutional nitrogen, N$^0$ . The polarization of the individual NV centres in the diamond is dependent on the separation of the NV$^-$ and the nitrogen donor. When the NV$^-$ - N$^+$ pair separation is large the properties of the pair will be as for single sites and a high degree of spin polarization attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. The deterioration occurs as a consequence of electron tunneling in the excited state from NV$^-$ to N$^+$ and results in an optical cycle that includes NV$^0$. The tunneling process is linear in optical excitation and more prevalent the closer the N$^+$ is to the NV$^-$ centre. However, the separation between the NV$^-$ and its donor N$^+$ can be effected by light through the excitation of NV$^-$ and/or ionization of N$^0$. The optical excitation that creates the spin polarization can also modify the sample properties and during excitation creates charge dynamics. The consequence is that the magnitude of spin polarization, the spin relaxation and coherence times T$_1$ and T$_2$ have a dependence on the nitrogen concentration and on the excitation wavelength. The adjacent N$^+$ gives an electric field that Stark shifts the NV$^-$ transitions and for an ensemble results in line broadening. It is observation of changes of these Stark induced effects that allow the variation in NV$^-$ - N$^+$ separation to be monitored. Spectroscopic measurements including that of the varying line widths are central to the study. They are made at low temperatures and include extensive measurements of the NV$^-$ optical transition at 637 nm, the infrared transition at 1042 nm and ODMR at 2.87 GHz.

cond-mat.mtrl-sci↗

arXiv2018

Coherence time of over a second in a telecom-compatible quantum memory storage material

Quantum memories for light will be essential elements in future long-range quantum communication networks. These memories operate by reversibly mapping the quantum state of light onto the quantum transitions of a material system. For networks, the quantum coherence times of these transitions must be long compared to the network transmission times, approximately 100 ms for a global communication network. Due to a lack of a suitable storage material, a quantum memory that operates in the 1550 nm optical fiber communication band with a storage time greater than 1 us has not been demonstrated. Here we describe the spin dynamics of $^{167}$Er$^{3+}:$Y$_{2}$SiO$_{5}$ in a high magnetic field and demonstrate that this material has the characteristics for a practical quantum memory in the 1550 nm communication band. We observe a hyperfine coherence time of 1.3 seconds. Further, we demonstrate efficient optical pumping of the entire ensemble into a single hyperfine state, the first such demonstration in a rare-earth system and a requirement for broadband spin-wave storage. With an absorption of 70 dB/cm at 1538 nm and $Λ$-transitions enabling spin-wave storage, this material is the first candidate identified for an efficient, broadband quantum memory at telecommunication wavelengths.

quant-ph↗

arXiv2018

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D mapping of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes.

physics.app-ph↗

arXiv2016

Generation of light with multimode time-delayed entanglement using storage in a solid state spin-wave quantum memory

Here we demonstrate generating and storing entanglement in a solid state spin-wave quantum memory with on-demand read out using the process of rephased amplified spontaneous emission (RASE). Amplified spontaneous emission (ASE), resulting from an inverted ensemble of Pr$^{3+}$ ions doped into a Y$_2$SiO$_5$ crystal, generates entanglement between collective states of the praseodymium ensemble and the output light. The ensemble is then rephased using a four-level photon echo technique. Entanglement between the ASE and its echo is confirmed and the inseparability violation preserved when the RASE is stored as a spin-wave for up to 5 $μ$s. RASE is shown to be temporally multimode with almost perfect distinguishability between two temporal modes demonstrated. These results pave the way for the use of multimode solid state quantum memories in scalable quantum networks.

quant-ph↗

arXiv2015

Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection

Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions. A major barrier in the development of large-scale QIP in diamond is the connection of NV spin registers by a quantum bus at room temperature. Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution. Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods. Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to achieve spin injection, transport and detection in diamond at room temperature. Having identified these mechanisms, we explore how they may be combined to realise an on-chip spin quantum bus.

quant-ph↗

arXiv2015

The observation of photon echoes from evanescently coupled rare-earth ions in a planar waveguide

We report the measurement of the inhomogeneous linewidth, homogeneous linewidth and spin state lifetime of Pr3+ ions in a novel waveguide architecture. The TeO2 slab waveguide deposited on a bulk Pr3+:Y2SiO5 crystal allows the 3H4 - 1D2 transition of Pr3+ ions to be probed by the optical evanescent field that extends into the substrate. The 2 GHz inhomogeneous linewidth, the optical coherence time of 70 +- 5 us, and the spin state lifetime of 9.8 +- 0.3 s indicate that the properties of ions interacting with the waveguide mode are consistent with those of bulk ions. This result establishes the foundation for large, integrated and high performance rare-earth-ion quantum systems based on a waveguide platform.

quant-ph↗