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Matthew P Hautzinger

Publications and source records attributed to Matthew P Hautzinger.

2 recordsLinked to original sources

Temperature-Induced Crossover of Coherent Phonon Mechanisms in Chiral 2D Perovskites

The coupling between electronic excitations and lattice degrees of freedom fundamentally dictates the optoelectronic functionality of hybrid perovskites. While the potential energy surfaces (PESs) of the electronic excited states are typically considered static, albeit modulated by thermal disorder, the exact nature of their structural evolution with temperature remains elusive. Here, we demonstrate that the excited-state structural reconfiguration in two-dimensional metal-halide perovskites is explicitly temperature-evolving, governed by lattice compliance. We select a chiral perovskite framework with an exceptionally large, temperature-dependent bond angle variance to maximize the structural compliance. Through phase-resolved resonant impulsive stimulated Raman scattering, we measure the coherent phonon dynamics and resolve the real-time structural pathways of exciton-lattice dressing. We observe a temperature-induced crossover from field-driven Impulsive Stimulated Raman Scattering (ISRS) to population-driven Displacive Excitation of Coherent Phonons (DECP). While momentum-driven ISRS pathways dominate at low temperatures, increasing thermal energy softens the lattice and enhances coordinate-driven displacive pathways, allowing excitons to sample steeper, highly anharmonic regions of the excited-state PES. Our results show that temperature can actively modulate the excited-state structural coordinates of flexible 2D frameworks, offering a practical strategy to tune exciton-lattice interactions in chiral optoelectronics.

cond-mat.mtrl-sci↗

Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors

The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHS) offer a compelling platform for room temperature control over electronic spin properties, leveraging effects such as chirality-induced spin selectivity (CISS) for the development of new opto-spintronic functionalities. We report room-temperature CISS-induced magnetoresistance (CISS-MR) exceeding 100% for spin valves in a configuration consisting of a ferromagnet (FM), tunneling barrier, and CMHS. The high CISS-MR is attributed to interfacial spin-selective tunneling barrier induced by the chirality, which can produce current dissymmetry factors that surpass the limit imposed by the Jullière model governed by the intrinsic spin polarization of the adjacent FM contact. The CISS-MR exhibits a strong dependence on the CMHS composition, revealing a structure-property relationship between CISS and structural chirality. The observed exceptionally large tunneling MR response differentiates from a subtle anisotropic MR arising from the proximity effect at the FM/CMHS interface in the absence of a tunneling barrier. Our study provides insights into charge-to-spin interconversion in chiral semiconductors, offering materials design principles to control and enhance CISS response and utilize it in functional platforms.

cond-mat.mtrl-sci↗