arXiv subjects

Matthias C. Hoffmann

Publications and source records attributed to Matthias C. Hoffmann.

30 records · Page 2Linked to original sources

arXiv2019

Distinguishing Local and non-Local Demagnetization in Ferromagnetic FePt Nanoparticles

Time-resolved coherent X-ray diffraction is used to measure the spatially resolved magnetization structure within FePt nanoparticles during laser-induced ultrafast demagnetization. The momentum-dependent X-ray magnetic diffraction shows that demagnetization proceeds at different rates at different X-ray momentum transfer. We show that the observed momentum-dependent scattering has the signature of inhomogeneous demagnetization within the nanoparticles, with the demagnetization proceeding more rapidly at the boundary of the nanoparticle. A shell region of reduced magnetization forms and moves inwards at a supermagnonic velocity. Spin-transport calculations show that the shell formation is driven by superdiffusive spin flux mainly leaving the nanoparticle into the surrounding carbon. Quantifying this non-local contribution to the demagnetization allows us to separate it from the local demagnetization.

cond-mat.mtrl-sci↗

arXiv2019

Dynamical slowing down in an ultrafast photo-induced phase transition

Complex systems, which consist of a large number of interacting constituents, often exhibit universal behavior near a phase transition. A slowdown of certain dynamical observables is one such recurring feature found in a vast array of contexts. This phenomenon, known as critical slowing down, is well studied mostly in thermodynamic phase transitions. However, it is less understood in highly nonequilibrium settings, where the time it takes to traverse the phase boundary becomes comparable to the timescale of dynamical fluctuations. Using transient optical spectroscopy and femtosecond electron diffraction, we studied a photo-induced transition of a model charge-density-wave (CDW) compound, LaTe$_3$. We observed that it takes the longest time to suppress the order parameter at the threshold photoexcitation density, where the CDW transiently vanishes. This finding can be quantitatively captured by generalizing the time-dependent Landau theory to a system far from equilibrium. The experimental observation and theoretical understanding of dynamical slowing down may offer insight into other general principles behind nonequilibrium phase transitions in many-body systems.

cond-mat.str-el↗

arXiv2018

Terahertz-Driven Phonon Upconversion in SrTiO3

Direct manipulation of the atomic lattice using intense long-wavelength laser pulses has become a viable approach to create new states of matter in complex materials. Conventionally, a high frequency vibrational mode is driven resonantly by a mid-infrared laser pulse and the lattice structure is modified through indirect coupling of this infrared-active phonon to other, lower frequency lattice modulations. Here, we drive the lowest frequency optical phonon in the prototypical transition metal oxide SrTiO3 well into the anharmonic regime with an intense terahertz field. We show that it is possible to transfer energy to higher frequency phonon modes through nonlinear coupling. Our observations are carried out by directly mapping the lattice response to the coherent drive field with femtosecond x-ray pulses, enabling direct visualization of the atomic displacements.

cond-mat.mtrl-sci↗

arXiv2017

Local Terahertz Field Enhancement for Time-Resolved X-ray Diffraction

We report local field strength enhancement of single-cycle terahertz (THz) pulses in an ultrafast time-resolved x-ray diffraction experiment. We show that patterning the sample with gold microstructures increases the THz field without changing the THz pulse shape or drastically affecting the quality of the x-ray diffraction pattern. We find a five-fold increase in THz-induced x-ray diffraction intensity change in the presence of microstructures on a SrTiO3 thin-film sample.

physics.ins-det↗

arXiv2016

Single-Shot Terahertz Time-Domain Spectroscopy in Pulsed High Magnetic Fields

We have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers in the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.

physics.ins-det↗

arXiv2015

Femtosecond X-ray magnetic circular dichroism absorption spectroscopy at an X-ray free electron laser

X-ray magnetic circular dichroism spectroscopy using an X-ray free electron laser is demonstrated with spectra over the Fe L$_{3,2}$-edges. This new ultrafast time-resolved capability is then applied to a fluence-dependent study of all-optical magnetic switching dynamics of Fe and Gd magnetic sublattices in a GdFeCo thin film above its magnetization compensation temperature. At the magnetic switching fuence, we corroborate the existence of a transient ferromagnetic-like state. The timescales of the dynamics, however, are longer than previously observed below the magnetization compensation temperature. Above and below the switching fluence range, we observe secondary demagnetization with about 5 ps timescales. This indicates that the spin thermalization takes longer than 5 ps.

cond-mat.mtrl-sci↗

arXiv2012

Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor

We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spectrum, with the zero-crossing point defined by the electron momentum relaxation rate. We also observed the nonlinear spectral broadening and compression of the THz pulse.

cond-mat.mtrl-sci↗

arXiv2010

Semiconductor saturable absorbers for ultrafast THz signals

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase of the group refractive index of the samples at higher THz pulse peak fields.

cond-mat.other↗

arXiv2009

Terahertz Kerr effect

We have observed optical birefringence in liquids induced by single-cycle THz pulses with field strengths exceeding 100 kV/cm. The induced change in polarization is proportional to the square of the THz electric field. The time-dependent THz Kerr signal is composed of a fast electronic response that follows the individual cycles of the electric field and a slow exponential response associated with molecular orientation.

cond-mat.other↗

arXiv2009

Observation of Nonequilibrium Carrier Distribution in Ge, Si and GaAs by Terahertz-pump--Terahertz-probe Measurements

We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increase of the absorption occurs at intermediate THz pulse energies. The recovery of the free carrier absorption was monitored by time-resolved THz-pump/THz-probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility gamma conduction band valley.

cond-mat.mtrl-sci↗

arXiv2009

THz-pump -- THz-probe spectroscopy of semiconductors at high field strengths

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.

cond-mat.mtrl-sci↗

arXiv2008

Impact ionization in InSb probed by THz-pump THz-probe spectroscopy

Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below-bandgap broadband far infrared radiation were investigated at 200 K and 80 K. Using a novel THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm^2, we observed carrier heating and impact ionization. The number of carriers produced exceeds 10^16 cm-3, corresponding to a change in carrier density Delta N/N of 700% at 80K. The onset of a well defined absorption peak at 1.2 THz is an indication of changes in LO and LA phonon populations due to cooling of the hot electrons.

cond-mat.mtrl-sci↗