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Matthias Diethelm

Publications and source records attributed to Matthias Diethelm.

2 recordsLinked to original sources

Overcoming Transport Layer Bottlenecks to Quantify Ionic Parameters from Transient Ion Current Measurements of Perovskite Solar Cells

In perovskite solar cells (PSCs), voltage step-induced transient ion current (TIC) measurements, commonly referred to as bias-assisted charge extraction (BACE), are frequently used to quantify ion density. Drift-diffusion simulations predict that the ion density computed from TIC saturates once mobile ions screen the electric field in the perovskite. However, experimental studies often report ion densities orders of magnitude above this limit, whose physical origin remains incompletely explained in terms of transport layer (TL) properties. In this work, the capacitance of the TLs is identified to be the fundamental bottleneck: the maximum quantifiable ion density is limited to the charge that can accumulate at the perovskite/TL interfaces, so that TIC most often depends more strongly on TL properties than on the ionic properties of the perovskite. Experiments with systematically varied C$_{\rm 60}$ electron-TL thickness (p-i-n) and Spiro-OMeTAD hole-TL doping (n-i-p) confirm this dependence across architectures. To overcome this limitation, the importance of a correction based on the average ionic displacement is discussed, and it is shown how extrapolating the TL-thickness trend towards the TL-free situation yields the actual ionic conductivity of the absorber, alongside density and mobility, depending on the assumed ionic model. Simulations are also examined in which ion penetration into the TLs or initial accumulation under forward bias raise the capacitive limit and extend TIC sensitivity to higher ion densities. The slow release of trapped carriers is also discussed as a potential source of current which can inflate the TIC signal. Overall, the presented analysis provides important practical considerations for interpreting TIC and quantifying ionic properties in PSCs.

cond-mat.mtrl-sci

Unveiling the GeI2-Assisted Oriented Growth of Perovskite Crystallite for High-Performance Flexible Sn Perovskite Solar Cells

Tin perovskites are emerging as promising alternatives to their lead-based counterparts for high-performance and flexible perovskite solar cells (PSCs). However, their rapid crystallization often leads to inadequate film quality and poor device performance. In this study, the role of GeI2 as an additive is investigated for controlling the nucleation and crystallization processes of formamidium tin triiodide (FASnI3). The findings reveal the preferential formation of a Ge-rich layer at the bottom of the perovskite film upon the introduction of GeI2. It is proposed that the initial formation of the Ge-complex acts as a crystallization regulator, promoting oriented growth of subsequent FASnI3 crystals and enhancing overall crystallinity. Through the incorporation of an optimal amount of GeI2, flexible Sn PSCs with an efficiency of 10.8% were achieved. Furthermore, it was observed that the GeI2 additive ensures a remarkable shelf-life for the devices, with the rigid cells retaining 91% of their initial performance after more than 13,800 hours of storage in an N2 gas environment. This study elucidates the mechanistic role of GeI2 in regulating the nucleation and crystallization process of tin perovskites, providing valuable insights into the significance of additive engineering for the development of high-performance flexible tin PSCs.

physics.app-ph