arXiv subjects

Matthias Niethammer

Publications and source records attributed to Matthias Niethammer.

18 recordsLinked to original sources

arXiv2025

The initial acceleration of a buoyant spherical bubble revisited

An analytical derivation of the buoyancy-induced initial acceleration of a spherical gas bubble in a host liquid is presented. The theory makes no assumptions further than applying the two-phase incompressible Navier-Stokes equations, showing that neither the classical approach using potential theory nor other simplifying assumptions are needed. The result for the initial bubble acceleration as a function of the gas and liquid densities, classically built on potential theory, is retained. The result is reproduced by detailed numerical simulations. The accelerated, although stagnant state of the bubble induces a pressure distribution on the bubble surface which is different from the result related to the Archimedean principle, emphasizing the importance of the non-equilibrium state for the force acting on the bubble.

physics.flu-dyn↗

arXiv2025

An unstructured geometrical un-split VOF method for viscoelastic two-phase flows

Since viscoelastic two-phase flows arise in various industrial and natural processes, developing accurate and efficient software for their detailed numerical simulation is a highly relevant and challenging research task. We present a geometrical unstructured Volume-of-Fluid (VOF) method for handling two-phase flows with viscoelastic liquid phase, where the latter is modeled via generic rate-type constitutive equations and a one-field description is derived by conditional volume averaging of the local instantaneous bulk equations and interface jump conditions. The method builds on the plicRDF-isoAdvector geometrical VOF solver that is extended and combined with the modular framework DeboRheo for viscoelastic computational fluid dynamics (CFD). A piecewise-linear geometrical interface reconstruction technique on general unstructured meshes is employed for discretizing the viscoelastic stresses across the fluid interface. DeboRheo facilitates a flexible combination of different rheological models with appropriate stabilization methods to address the high Weissenberg number problem.

physics.flu-dyn↗

arXiv2022

On the molecular mechanism behind the bubble rise velocity jump discontinuity in viscoelastic liquids

Bubbles rising in viscoelastic liquids may exhibit a jump discontinuity of the rise velocity as a critical bubble volume is exceeded. The phenomenon has been extensively investigated in the literature, both by means of experiments as well as via numerical simulations. The occurrence of the velocity jump has been associated with a change of the bubble shape under the formation of a pointed tip at the rear end and to the appearance of a so-called negative wake with the liquid velocity behind the bubble, pointing in the opposite direction to that in viscous Newtonian fluids. We revisit this topic, starting with a review of the state of knowledge on the interrelations between the mentioned characteristic features. In search for a convincing explanation of the jump phenomenon, we performed detailed numerical simulations of the transient rise of single bubbles in 3D, allowing for a local polymer molecular conformation tensor analysis. The latter shows that polymer molecules traveling along the upper bubble hemisphere are stretched in the circumferential direction, due to the flow kinematics. Then, depending on the relaxation time scale of the polymer, the stored elastic energy is either unloaded essentially above or below the bubble's equator. In the former case, this slows down the bubble, while the bubble gets accelerated otherwise. In this latter case, the relative velocity of the polymer molecules against the bubble is increased, giving rise to a self-amplification of the effect and thus causing the bubble rise velocity to jump to a higher level. Detailed experimental velocity measurements in the liquid field around the bubble confirmed the conclusion that the ratio of the time scale of the Lagrangian transport of polymer molecules along the bubble contour to the relaxation time scale of the polymer molecules determines the sub- or supercritical state of the bubble motion.

physics.flu-dyn↗

arXiv2021

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.

quant-ph↗

arXiv2020

Numerical simulation of non-isothermal viscoelastic flows at high Weissenberg numbers using a finite volume method on general unstructured meshes

In this numerical study, an original approach to simulate non-isothermal viscoelastic fluid flows at high Weissenberg numbers is presented. Stable computations over a wide range of Weissenberg numbers are assured by using the root conformation approach in a finite volume framework on general unstructured meshes. The numerical stabilization framework is extended to consider thermo-rheological properties in Oldroyd-B type viscoelastic fluids. The temperature dependence of the viscoelastic fluid is modeled with the time-temperature superposition principle. Both Arrhenius and WLF shift factors can be chosen, depending on the flow characteristics. The internal energy balance takes into account both energy and entropy elasticity. Partitioning is achieved by a constant split factor. An analytical solution of the balance equations in planar channel flow is derived to verify the results of the main field variables and to estimate the numerical error. The more complex entry flow of a polyisobutylene-based polymer solution in an axisymmetric 4:1 contraction is studied and compared to experimental data from the literature. We demonstrate the stability of the method in the experimentally relevant range of high Weissenberg numbers. The results at different imposed wall temperatures, as well as Weissenberg numbers, are found to be in good agreement with experimental data. Furthermore, the division between energy and entropy elasticity is investigated in detail with regard to the experimental setup.

physics.flu-dyn↗

arXiv2020

Bright single photon sources in lateral silicon carbide light emitting diodes

Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.

physics.app-ph↗

arXiv2020

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

quant-ph↗

arXiv2019

Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

cond-mat.mes-hall↗

arXiv2019

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.

cond-mat.mes-hall↗

arXiv2018

Laser writing of scalable single colour centre in silicon carbide

Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correction in the writing apparatus and the non-annealing process, we generate single $V_{Si}$ centres with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing $V_{Si}$ centres and conclude that there are about 16 photons involved in the laser writing $V_{Si}$ centres process. Our results represent a powerful tool in fabrication of single $V_{Si}$ centres in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.

cond-mat.mes-hall↗

arXiv2018

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.

quant-ph↗

arXiv2018

Robust and efficient control of spin probes in a complex (biological) environment. Towards sensing of fast temperature fluctuations

We present an optimized scheme for nanoscale measurements of temperature in a complex environment using the nitrogen-vacancy center in nanodiamonds. To this end we combine a Ramsey measurement utilized to temperature determination with advanced optimal control theory. We test our new design on single nitrogen-vacancy centers in bulk diamond and fixed nanodiamonds, achieving better readout signal than with common soft or hard microwave control pulses. We demonstrate temperature readout using rotating nanodiamonds in an agarose matrix. Our method opens the way to measure temperature fluctuations in complex biological environment. The used principle however, is universal and not restricted to temperature sensing.

cond-mat.mes-hall↗

arXiv2018

An Extended Volume of Fluid Method and its Application to Single Bubbles Rising in a Viscoelastic Liquid

An extended volume of fluid method is developed for two-phase direct numerical simulations of systems with one viscoelastic and one Newtonian phase. A complete set of governing equations is derived by conditional volume-averaging of the local instantaneous bulk equations and interface jump conditions. The homogeneous mixture model is applied for the closure of the volume-averaged equations. An additional interfacial stress term arises in this volume-averaged formulation which requires special treatment in the finite-volume discretization on a general unstructured mesh. A novel numerical scheme is proposed for the second-order accurate finite-volume discretization of the interface stress term. We demonstrate that this scheme allows for a consistent treatment of the interface stress and the surface tension force in the pressure equation of the segregated solution approach. Because of the high Weissenberg number problem, an appropriate stabilization approach is applied to the constitutive equation of the viscoelastic phase to increase the robustness of the method at higher fluid elasticity. Direct numerical simulations of the transient motion of a bubble rising in a quiescent viscoelastic fluid are performed for the purpose of experimental code validation. The well-known jump discontinuity in the terminal bubble rise velocity when the bubble volume exceeds a critical value is captured by the method. The formulation of the interfacial stress together with the novel scheme for its discretization is found crucial for the quantitatively correct prediction of the jump discontinuity in the terminal bubble rise velocity.

physics.flu-dyn↗

arXiv2018

Quantum properties of dichroic silicon vacancies in silicon carbide

The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or light-matter interfaces, the search for an ideal defect with multi-functional ability remains open. In this spirit, we investigate here the optical and spin properties of the V1 defect centre, one of the silicon vacancy defects in the 4H polytype of silicon carbide (SiC). The V1 centre in 4H-SiC features two well-distinguishable sharp optical transitions and a unique S=3/2 electronic spin, which holds promise to implement a robust spin-photon interface. Here, we investigate the V1 defect at low temperatures using optical excitation and magnetic resonance techniques. The measurements, which are performed on ensemble, as well as on single centres, prove that this centre combines coherent optical emission, with up to 40% of the radiation emitted into the zero-phonon line (ZPL), a strong optical spin signal and long spin coherence time. These results single out the V1 defect in SiC as a promising system for spin-based quantum technologies.

quant-ph↗

arXiv2017

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

physics.optics↗

arXiv2017

A numerical stabilization framework for viscoelastic fluid flow using the finite volume method on general unstructured meshes

A robust finite volume method for viscoelastic flow analysis on general unstructured meshes is developed. It is built upon a general-purpose stabilization framework for high Weissenberg number flows. The numerical framework provides full combinatorial flexibility between different kinds of rheological models on the one hand, and effective stabilization methods on the other hand. A special emphasis is put on the velocity-stress-coupling on co-located computational grids. Using special face interpolation techniques, a semi-implicit stress interpolation correction is proposed to correct the cell-face interpolation of the stress in the divergence operator of the momentum balance. Investigating the entry-flow problem of the 4:1 contraction benchmark, we demonstrate that the numerical methods are robust over a wide range of Weissenberg numbers and significantly alleviate the high Weissenberg number problem. The accuracy of the results is evaluated in a detailed mesh convergence study.

physics.flu-dyn↗

arXiv2016

Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S=3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multi frequency spin excitation. Our works suggest that the silicon vacancy in an industry-friendly platform, SiC, has potential for various magnetometry applications at ambient conditions.

cond-mat.mes-hall↗

arXiv2015

Vector magnetometry based on S=3/2 electronic spins

Electronic spin systems with S>1/2 provide an efficient method for DC vector magnetometry, since the conventional electron spin resonance spectra at a given magnetic field reflect not only the field strength but also orientation in the presence of strong spin-spin interactions. S=1 spins, e.g. the nitrogen-vacancy centers in diamond, have been intensively investigated for such a purpose. In this report, we compare S=1 and S=3/2 spins, and discuss how one can apply general principles for the use of high spin systems as a vector magnetometer to the S=3/2 spin systems. We find analytical solutions which allow a reconstruction of the magnetic field strength and polar angle using the observed resonance transitions if an uniaxial symmetry exists for the spin-spin interaction as in S=1 systems. We also find that an ambiguity of determining the field parameters may arise due to the unique properties of S=3/2 systems, and present solutions for it utilizing additional transitions in the low-field region. The electronic spins of the silicon vacancy in silicon carbide will be introduced as a model for the S=3/2 DC vector magnetometer and the practical usage of it, including the magic-angle spinning type method, will be presented too.

cond-mat.mes-hall↗