arXiv subjects

Matthieu C. Dartiailh

Publications and source records attributed to Matthieu C. Dartiailh.

At least 19 recordsLinked to original sources

arXiv2025

A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures.

cond-mat.mes-hall↗

arXiv2024

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays

Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures.

cond-mat.mes-hall↗

arXiv2023

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments.

cond-mat.mes-hall↗

arXiv2023

Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure

Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.

cond-mat.mes-hall↗

arXiv2022

Fusion of Majorana Bound States with Mini-Gate Control in Two-Dimensional Systems

A hallmark of topological superconductivity is the non-Abelian statistics of Majorana bound states (MBS), its chargeless zero-energy emergent quasiparticles. The resulting fractionalization of a single electron, stored nonlocally as a two spatially-separated MBS, provides a powerful platform for implementing fault-tolerant topological quantum computing. However, despite intensive efforts, experimental support for MBS remains indirect and does not probe their non-Abelian statistics. Here we propose how to overcome this obstacle in mini-gate controlled planar Josephson junctions (JJs) and demonstrate non-Abelian statistics through MBS fusion, detected by charge sensing using a quantum point contact, based on dynamical simulations. The feasibility of preparing, manipulating, and fusing MBS in two-dimensional (2D) systems is supported in our experiments which demonstrate the gate control of topological transition and superconducting properties with five mini gates in InAs/Al-based JJs. While we focus on this well-established platform, where the topological superconductivity was already experimentally detected, our proposal to identify elusive non-Abelian statistics motivates also further MBS studies in other gate-controlled 2D systems.

cond-mat.mes-hall↗

arXiv2021

Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits

Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that band gap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET.

cond-mat.mes-hall↗

arXiv2021

Investigating the Exchange of Ising Chains on a Digital Quantum Computer

The ferromagnetic state of an Ising chain can represent a two-fold degenerate subspace or equivalently a logical qubit which is protected from excitations by an energy gap. We study a a braiding-like exchange operation through the movement of the state in the qubit subspace which resembles that of the localized edge modes in a Kitaev chain. The system consists of two Ising chains in a 1D geometry where the operation is simulated through the adiabatic time evolution of the ground state. The time evolution is implemented via the Suzuki-Trotter expansion on basic single- and two-qubit quantum gates using IBM's Aer QASM simulator. The fidelity of the system is investigated as a function of the evolution and system parameters to obtain optimum efficiency and accuracy for different system sizes. Various aspects of the implementation including the circuit depth, Trotterization error, and quantum gate errors pertaining to the Noisy Intermediate-Scale Quantum (NISQ) hardware are discussed as well. We show that the quantum gate errors, i.e. bit-flip, phase errors, are the dominating factor in determining the fidelity of the system as the Trotter error and the adiabatic condition are less restrictive even for modest values of Trotter time steps. We reach an optimum fidelity $>99\%$ on systems of up to $11$ sites per Ising chain and find that the most efficient implementation of a single braiding-like operation for a fidelity above $90\%$ requires a circuit depth of the order of $\sim 10^{3}$ restricting the individual gate errors to be less than $\sim 10^{-6}$ which is prohibited in current NISQ hardware.

quant-ph↗

arXiv2021

Tuning supercurrent in Josephson field effect transistors using h-BN dielectric

The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer using a van der Waals-mediated pick up process. We discuss the fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures to avoid chemical reactions and unintentional doping that could affect the characteristics of the JJ-FET. We achieve full gate-tunablity of supercurrent by using only 5~nm thick h-BN flakes. We contrast our process with devices fabricated using a conventional AlO$_{\rm x}$ gate dielectric and show that h-BN could be an excellent competing dielectric for JJ-FET devices. We observe that the product of normal resistance and critical current, I$_{\rm c}$R$_{\rm n}$, is comparable for both types of devices, but strikingly higher R$_{\rm n}$ for the h-BN-based devices indicating that the surface is doped less compared to AlO$_{\rm x}$ gate dielectric.

cond-mat.mes-hall↗

arXiv2021

Phase signature of topological transition in Josephson Junctions

Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-plane magnetic field, ${\bf B}_\|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${\bf B}_\|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states.

cond-mat.mes-hall↗

arXiv2020

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gallium ion implantation beyond its solubility limits. The resulting structural and physical characteristics have been tailored by changing the implantation energy and activation annealing temperature. Surprisingly, in addition to the poly-crystalline phase with weakly-coupled superconducting Ga clusters we find a nano-crystalline phase with quasi-2D characteristics consisting of a thin Ga film constrained near top surfaces. The new phase shows signatures of strong disorder such as anomalous B${\rm c}$ temperature dependence and crossings in magentoresistance isotherms. Apart from using hyperdoped Ge as a potential test-bed for studying signatures of quantum phase transitions (e.g. quantum Griffith singularity), our results suggest the possibility of integration of hyperdoped Ge nano-crystalline phase into superconducting circuits due to its 2D nature.

cond-mat.mes-hall↗

arXiv2020

Voltage-tunable superconducting resonators: a platform for random access quantum memory

In quantum computing architectures, one important factor is the trade-off between the need to couple qubits to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended period of time. In the case of superconducting circuits, one approach is to utilize fixed frequency qubits coupled to coplanar waveguide resonators such that the system can be kept in a configuration that is relatively insensitive to noise. Here, we propose a scalable voltage-tunable quantum memory (QuMem) design concept compatible with superconducting qubit platforms. Our design builds on the recent progress in fabrication of Josephson field effect transistors (JJ-FETs) which use InAs quantum wells. The JJ-FET is incorporated into a tunable coupler between a transmission line and a high-quality resonator in order to control the overall inductance of the coupler. A full isolation of the high-quality resonator can be achieved by turning off the JJ-FET. This could allow for long coherence times and protection of the quantum information inside the storage cavity. The proposed design would facilitate the implementation of random access memory for storage of quantum information in between computational gate operations.

quant-ph↗

arXiv2020

Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells

Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands.

cond-mat.mes-hall↗

arXiv2020

Missing Shapiro steps in topologically trivial Josephson Junction on InAs quantum well

Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of topological superconductivity. Here, we report on missing odd steps in topologically trivial Josephson junctions fabricated on InAs quantum wells. We ascribe our observations to the high transparency of our junctions allowing Landau-Zener transitions. The probability of these processes is found to be independent of the drive frequency. We analyze our results using a bi-modal transparency distribution which demonstrates that only few modes carrying 4$π$ periodic current are sufficient to describe the disappearance of odd steps. Our findings highlight the elaborate circumstances that have to be considered in the investigation of the 4$π$ Josephson junctions in relationship to topological superconductivity.

cond-mat.mes-hall↗

arXiv2020

Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact

We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.

cond-mat.mes-hall↗

arXiv2020

Phase Control of Majorana Bound States in a Topological X Junction

Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS have focused on one-dimensional systems, the onset of topological superconductivity requires delicate parameter tuning and geometric constraints pose significant challenges for their control and demonstration of non-Abelian statistics. To overcome these challenges, building on recent experimental advances in planar Josephson junctions (JJs), we propose a MBS platform of X-shaped JJs. This versatile implementation reveals how external flux control of the superconducting phase difference can generate and manipulate multiple MBS pairs to probe non-Abelian statistics. The underlying topological superconductivity exists over a large parameter space, consistent with materials used in our fabrication of such X junctions, as an important step towards scalable topological quantum computing.

cond-mat.mes-hall↗

arXiv2019

Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed selectively on timescales over which bulk carriers are frozen.

cond-mat.mes-hall↗

arXiv2019

Gate Controlled Anomalous Phase Shift in Al/InAs Josephson Junctions

In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Josephson effect -- the hallmark effect of superconducting spintronics --and can be characterized by the corresponding anomalous phase shift ($ϕ_0$). We report the observation of a tunable anomalous Josephson effect in InAs/Al Josephson junctions measured via a superconducting quantum interference device (SQUID). By gate controlling the density of InAs we are able to tune the spin-orbit coupling of the Josephson junction by more than one order of magnitude. This gives us the ability to tune $ϕ_0$, and opens several new opportunities for superconducting spintronics, and new possibilities for realizing and characterizing topological superconductivity.

cond-mat.mes-hall↗

arXiv2019

Superconducting proximity effect in epitaxial Al-InAs heterostructures

Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits. Recently Josephson junctions using InAs weak link with epitaxial aluminum contact have improved the product of normal resistance and critical current, $I_cR_N$, in addition to fabrication process reliability. Here we study similar devices with epitaxial contact and find large supercurrent and substantial product of $I_cR_N$ in our junctions. However we find a striking difference when we compare these samples with higher mobility samples in terms of product of excess current and normal resistance, $I_{ex}R_N$. The excess current is negligible in lower mobility devices while it is substantial and independent of gate voltage and junction length in high mobility samples. This indicates that even though both sample types have epitaxial contacts only the high-mobility one has a high transparency interface. In the high mobility short junctions, we observe values of $I_cR_N/Δ\sim 2.2$ and $I_{ex}R_N/Δ\sim 1.5$ in semiconductor weak links.

cond-mat.mes-hall↗