arXiv subjects

Mattia Iannetti

Publications and source records attributed to Mattia Iannetti.

4 recordsLinked to original sources

arXiv2026

Antiferromagnetic stripe phase and large-gap insulating ground state of the correlated $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) single atomic layer

The one-third monolayer Sn layer on Si(111) has long been considered a benchmark system for exploring two-dimensional Mott physics, owing to its narrow bandwidth and sizable on-site Coulomb repulsion. Previous experiments suggested the emergence of a low-temperature Mott insulating phase with an energy gap of only a few tens of meV, while theory predicted a possible antiferromagnetic ordering that remained experimentally elusive. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy with first-principles calculations, we reveal that the $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) surface undergoes a transition below 30K into a robust insulating state characterized by a remarkably large gap of about 440 $\pm$ 120 meV at 4K, five to ten times larger than previously reported. Quasiparticle interference imaging uncovers a well-defined $2\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) superstructure, providing direct evidence for a two-dimensional stripe-like antiferromagnetic order. Ab initio calculations reveal that the silicon substrate stabilizes this phase through strong nonlocal tin-tin interactions, highlighting the decisive role of substrate-driven correlations in the $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) system.

cond-mat.str-el↗

arXiv2025

The electronic structure of a doped Mott-Hubbard surface

The Sn/Si(111)-({\sqrt}3{\times}{\sqrt}3)R30° surface, a 2D Mott insulator, has long been predicted and then found experimetally to metallize and even turn superconducting upon boron doping. In order to clarify the structural, spectroscopic and theoretical details of that evolution, here we present ARPES data supplementing morphology and scanning tunneling measurements. These combined experimental results are compared with predictions from a variety of electronic structure approaches, mostly density functional DFT+U, but not neglecting Mott-Hubbard models, both ordered and disordered. These theoretical pictures address different spectroscopic aspects, including the 2D Fermi surface, the Hubbard bands, etc. While no single picture account for all observations at once,the emergent hypothesis compatible with all data is that metallization arises from sub-subsurface boron doping, additional to the main standard subsurface boron geometry, that would leave the surface insulating. These results advance the indispensable frame for the further understanding of this fascinating system.

cond-mat.str-el↗

arXiv2025

Backscattering in Topological Edge States Despite Time-Reversal Symmetry

Spin-momentum-locked edge states of quantum spin Hall insulators (QSHIs) provide a compelling platform for spintronic applications, owing to their intrinsic protection against backscattering from non-magnetic disorder. This protection emerges from time-reversal symmetry, which pairs Kramers partners of helical edge modes with opposite spin and momentum, thereby strictly forbidding elastic single-particle backscattering within the pair. Yet, contrary to the idealized notion of linear edge bands, the non-monotonic dispersions of realistic materials can host multiple Kramers pairs, reintroducing backscattering channels between them without violating time-reversal symmetry. Here, we investigate inter-Kramers pair backscattering in the non-linear edge bands of the QSHI indenene, highlighting a critical aspect of edge-state stability. Using quasiparticle interference in scanning tunneling spectroscopy -- a direct probe of backscattering -- we observe pairwise coupling between energy-degenerate Kramers pairs, while energy regions with only a single Kramers pair remain strictly protected. Supported by theoretical analysis, our findings provide an unprecedented experimental demonstration of edge state backscattering fully consistent with their underlying topological protection. This insight has profound implications for numerous QSHI candidates, emphasizing that the mere presence of gap-traversing edge modes does not inherently guarantee their protection against backscattering.

cond-mat.mes-hall↗

arXiv2023

Unveiling the pairing Symmetry of the superconducting Sn/Si(111) via angle-resolved THz pump spectroscopy

Doping tin surface epitaxially grown on silicon, Sn/Si(111), with boron atoms yields the appearance of a superconducting (SC) phase below $T_c\sim 4-5$K. Even though the pairing mechanism remains unknown, experimental evidence of chiral $d-$wave superconductivity has been recently reported, then ruling out a phonon-mediated pairing. Here we study theoretically the SC phase and symmetries of the doped Sn/Si(111) within a $t-J$ model. We analyze the photo-excitation of the system by intense THz pulses and show that the polarization dependence of the induced current can distinguish between different symmetries of the SC gap, thus providing a novel experimental mean to investigate the spectroscopic features of the Sn/Si(111) across the SC transition.

cond-mat.supr-con↗