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Maxim Rakhlin

Publications and source records attributed to Maxim Rakhlin.

4 recordsLinked to original sources

Telecom C-band single-photon sources with a semiconductor-dielectric microresonator

Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta -- single C-band photons. Currently, the widely used sources of such photons are highly attenuated laser pulses, featured by a low probability of single photon occurrence. Here, we present an efficient source with an InAs/GaAs quantum dot on a metamorphic buffer layer inside a micropillar-shaped microcavity. The key innovation is the use of different semiconductor and dielectric materials to form the lower (GaAs/AlGaAs) and upper (Si/SiO$_2$) Bragg reflectors. Compatibility of these materials in a monolithic source is achieved by depositing a small amount of Si/SiO$_2$ pairs on an incomplete micropillar made from a coherent heterostructure grown by molecular beam epitaxy. This design enables resonant excitation with $\pi$-pulses and generation of polarized photons with a record-breaking end-to-end efficiency of 11%.

cond-mat.mes-hall

Mie-resonant silicon waveguide for efficient coupling with excitonic emitters in InSe

Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resonant nanodisks is experimentally studied. Photoluminescence power at the resonant waveguide output is increased by~2.5 times at 950~nm in comparison with the case of a conventional rib waveguide of the same geometrical parameters due to the efficient excitation of Mie-type magnetic dipole resonances in individual nanoparticles. These results show inspiring possibilities for creating new on-chip light emitters for various integrated photonics applications.

physics.optics

Hidden anisotropy controls spin-photon entanglement in a charged quantum dot

Photon entanglement is indispensable for optical quantum technologies. Measurement-based optical quantum computing and all-optical quantum networks rely on multiphoton cluster states consisting of indistinguishable entangled photons. A promising method for creating such cluster states on demand is spin-photon entanglement using the spin of a resident charge carrier in a quantum dot, precessing in a weak external magnetic field. In this work, we show theoretically and experimentally that spin-photon entanglement is strongly affected by the hidden anisotropy of quantum dots, which can arise from mechanical stress, shape anisotropy and even specific crystal structure. In the measurements of time-resolved photoluminescence and cross-polarized second-order photon correlation function in a magnetic field, the anisotropy manifests itself in the spin dynamics and, as a consequence, in the spin-photon concurrence. The measured time-filtered spin-photon Bell state fidelity depends strongly on the excitation polarization and reaches an extremely high value of 94% at maximum. We specify the magnetic field and excitation polarization directions that maximize spin-photon entanglement and thereby enhance the fidelity of multiphoton entangled states.

cond-mat.mes-hall

Allotropic Ga$_2$Se$_3$/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission

The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films. In this work, we show that control over their formation makes it possible to create structures with the desired properties. We propose Ga$_2$Se$_3$/GaSe nanostructures by van der Waals epitaxy with a high VI/III flux ratio as a source of narrow exciton lines. Actually, these nanostructures are a combination of allotropes: GaSe and Ga$_2$Se$_3$, consisting of the same atoms in different arrangements. The energy position of the narrow lines is determined by the quantum confinement in Ga$_2$Se$_3$ inclusions of different sizes in the GaSe matrix, similar to quantum dots, and their linear polarization is due to the ordering of Ga vacancies in a certain crystalline direction in Ga$_2$Se$_3$. Such nanostructures exhibit single-photon emission with second-order correlation function $g^{(2)}(0)\sim$0.1 at 10 K that makes them promising for quantum technologies.

cond-mat.mes-hall