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Maximilian Obst

Publications and source records attributed to Maximilian Obst.

9 recordsLinked to original sources

Deterministic control over launching efficiency of higher-order hyperbolic phonon polaritons

Hyperbolic materials, which exhibit an extreme form of birefringence enabling the volume confinement and frequency-dependent propagation of deeply sub-diffractional optical modes, offer the opportunity for extreme confinement via the stimulation polaritonic modes, with substantially higher confinement obtained through the efficient excitation of of the higher-order (shorter wavelength) hyperbolic polaritonic modes, which they can support. However, while these higher-order hyperbolic polaritons (HO-HPhPs) form high-momentum ray-like propagation within the bulk, efficient excitation of these modes, especially in contrast to the long-wavelength lower-momentum surface polariton propagating modes, has remained a challenge. Critically, the large momentum mismatch between these modes and free-space light, alongside the spatial mismatch between the sub-diffractional scatterer and the distinct modal distribution of HO-HPhPs, lead to a suppressed launching efficiency of these higher-order modes, limiting their use in nanophotonic applications. Here, we report the experimental observation of a 10-fold enhancement in the excitation efficiency of HO-HPhPs through the use of subsurface scatterers over traditional surface scattering (e.g. a flake edge or gold launcher) within single-crystalline {\alpha}-MoO3 slabs. We employ full-wave numerical simulations to investigate the role of the spatial overlap between HO-HPhP modal distributions and the scatterer placement upon excitation efficiency. Furthermore, we develop a generalized process using transfer matrix method to selectively design modal HO-HPhP excitation, which advances the capabilities of HPhP multiplexing for on-chip applications.

physics.optics

Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy

Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to ensure their performance in advanced electronic and optoelectronic applications. This work demonstrates that scattering-type scanning near-field optical microscopy (s-SNOM) can meet the demanding performance requirements for characterizing homoepitaxial GaN devices. Specifically, we show that combining s-SNOM results in the mid-IR and terahertz (THz) spectral ranges can disentangle carrier and lattice changes in a GaN p-i-n diode, which is not possible using one spectral range alone. We observe strong, resonant near-field signals near the LO phonon mode of GaN that correlate well with point-dipole models. This data shows great sensitivity to the local carrier density, with changes on the order of 1018 cm-3 easily resolved experimentally. Further, we demonstrate high sensitivity to sub-surface defects, which remain a significant challenge for other non-destructive techniques. To validate the power of s-SNOM imaging, our results are compared to traditional metrologies, including micro-Raman mapping and Kelvin Probe Force Microscopy (KPFM). Our results show that s-SNOM shows superior resolution and sensitivity to perturbations, highlighting the power of this technique in semiconductor device characterization.

cond-mat.mtrl-sci

Tailoring phonon-driven responses in {\alpha}-MoO3 through isotopic enrichment

The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material is {\alpha}-MoO3, which as an orthorhombic crystal boasts three distinct phonon dispersions, providing three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the mid-infrared (MIR). Here, the tunability of both optical and thermal responses in isotopically enriched {\alpha}-MoO3 (98MoO3, Mo18O3 and 98Mo18O3) are explored. A uniform ~5 % spectral redshift from 18O enrichment is observed in both Raman- and IR-active TO phonons. Both the in- and out-of-plane thermal conductivities for the isotopic variations are reported. Ab initio calculations both replicate experimental findings and analyze the select-mode three-phonon scattering contributions. The HPhPs from each isotopic variation are probed with s-SNOM and their Q- factors are reported. A Q-factor maxima increase of ~50 % along the [100] in the RB2 and ~100 % along the [001] in the RB3 are reported for HPhPs supported in 98Mo18O3. Observations in both real and Fourier space of higher-order HPhP modes propagating in single slabs of isotopically enriched {\alpha}-MoO3 without the use of a subdiffractional surface scatterer are presented here. This work illustrates the tunability of {\alpha}-MoO3 for thermal and nanophotonic applications.

cond-mat.mtrl-sci

Spectral tuning of hyperbolic shear polaritons in monoclinic gallium oxide via isotopic substitution

Hyperbolic phonon polaritons - hybridized modes arising from the ultrastrong coupling of infrared light to strongly anisotropic lattice vibrations in uniaxial or biaxial polar crystals - enable to confine light to the nanoscale with low losses and high directionality. In even lower symmetry materials, such as monoclinic $\beta$-Ga$_2$O$_3$ (bGO), hyperbolic shear polaritons (HShPs) further enhance the directionality. Yet, HShPs are intrinsically supported only within narrow frequency ranges defined by the phonon frequencies of the host material. Here, we report spectral tuning of HShPs in bGO by isotopic substitution. Employing near-field optical microscopy to image HShPs in $^{18}$O bGO films homo-epitaxially grown on a $^{16}$O bGO substrate, we demonstrate a spectral redshift of $\sim~40~$cm$^{-1}$ for the $^{18}$O bGO, compared to $^{16}$O bGO. The technique allows for direct observation and a model-free estimation of the spectral shift driven by isotopic substitution without the need for knowledge of the dielectric tensor. Complementary far-field measurements and ab initio calculations - in good agreement with the near-field data - confirm the effectiveness of this estimation. This multifaceted study demonstrates a significant isotopic substitution induced spectral tuning of HShPs into a previously inaccessible frequency range, creating new avenues for technological applications of such highly directional polaritons.

physics.optics

Hot electron dynamics in a semiconductor nanowire under intense THz excitation

We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels.

cond-mat.mes-hall

Terahertz Twistoptics -- engineering canalized phonon polaritons

The terahertz (THz) frequency range is key to study collective excitations in many crystals and organic molecules. However, due to the large wavelength of THz radiation, the local probing of these excitations in smaller crystalline structures or few-molecular arrangements, requires sophisticated methods to confine THz light down to the nanometer length scale, as well as to manipulate such a confined radiation. For this purpose, in recent years, taking advantage of hyperbolic phonon polaritons (HPhP) in highly anisotropic van der Waals (vdW) materials has emerged as a promising approach, offering a multitude of manipulation options such as control over the wavefront shape and propagation direction. Here, we demonstrate the first THz application of twist-angle-induced HPhP manipulation, designing the propagation of confined THz radiation between 8.39 and 8.98 THz in the vdW material alpha-molybdenum trioxide ($α-MoO_{3}$), hence extending twistoptics to this intriguing frequency range. Our images, recorded by near-field optical microscopy, show the frequency- and twist-angle-dependent change between hyperbolic and elliptic polariton propagation, revealing a polaritonic transition at THz frequencies. As a result, we are able to allocate canalization (highly collimated propagation) of confined THz radiation by carefully adjusting these two parameters, i.e. frequency and twist angle. Specifically, we report polariton canalization in $α-MoO_{3}$ at 8.67 THz for a twist angle of 50°. Our results demonstrate an unprecedented control and the manipulation of highly-confined collective excitations at THz frequencies, offering novel possibilities for nanophotonic applications.

physics.optics

Germanium monosulfide as a natural platform for highly anisotropic THz polaritons

Terahertz (THz) electromagnetic radiation is key to optically access collective excitations such as magnons (spins), plasmons (electrons), or phonons (atomic vibrations), thus bridging between optics and solid-state physics. Confinement of THz light to the nanometer length scale is desirable for local probing of such excitations in low dimensional systems, thereby inherently circumventing the large footprint and low spectral density of far-field THz optics. For that purpose, phonon polaritons (PhPs, i.e., light coupled to lattice vibrations in polar crystals) in anisotropic van der Waals (vdW) materials have recently emerged as a promising platform for THz nanooptics; yet the amount of explored, viable materials is still exiguous. Hence, there is a demand for the exploration of novel materials that feature not only THz PhPs at different spectral regimes, but also exhibit unique anisotropic (directional) electrical, thermoelectric, and vibronic properties. To that end, we introduce here the semiconducting alpha-germanium(II) sulfide (GeS) as an intriguing candidate. By employing THz nano-spectroscopy supported by theoretical analysis, we provide a thorough characterization of the different in-plane hyperbolic and elliptical PhP modes in GeS. We find not only PhPs with long life times ($τ$ > 2 ps) and excellent THz light confinement ($λ_0/λ$ > 45), but also an intrinsic, phonon-induced anomalous dispersion as well as signatures of naturally occurring PhP canalization within one single GeS slab.

physics.optics

Nanoscale-confined Terahertz Polaritons in a van der Waals Crystal

Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light-matter interactions, thus enabling light manipulation in deep sub-wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures - such as antennas or nanoslits - with large footprints due to the rather long wavelengths of THz radiation. In this context, phonon polaritons - light coupled to lattice vibrations - in van der Waals (vdW) crystals have emerged as a promising solution for controlling light beyond the diffraction limit, as they feature extreme field confinements and low optical losses. However, experimental demonstration of nanoscale-confined phonon polaritons at THz frequencies has so far remained elusive. Here, we provide it by employing scattering-type scanning near-field optical microscopy (s-SNOM) combined with a free-electron laser (FEL) to reveal a range of low-loss polaritonic excitations at frequencies from 8 to 12 THz in the vdW semiconductor $α-MoO_3$. We visualize THz polaritons with i) in-plane hyperbolic dispersion, ii) extreme nanoscale field confinement (below $λ_o/75$) and iii) long polariton lifetimes, with a lower limit of > 2 ps.

cond-mat.mes-hall