arXiv subjects

Maximilian Schaal

Publications and source records attributed to Maximilian Schaal.

3 recordsLinked to original sources

arXiv2026

Tuning of Photoexcited Electron Dynamics at Monolayer h-BN/Metal Interfaces by Corrugation

Atomic-scale corrugation in two-dimensional materials can modify interfacial electronic coupling, yet its influence on ultrafast carrier relaxation remains poorly established. Here, we compare image potential states (IPS) at monolayer h-BN/Ir(111) and h-BN/Pt(111) interfaces using structural characterization and time-resolved two-photon photoemission spectroscopy. Consistent with literature, h-BN is strongly corrugated on Ir(111) but comparatively flat on Pt(111). The first (n = 1) and second (n = 2) IPS appears at similar energies on both substrates, whereas their relaxation dynamics differ markedly. On h-BN/Ir(111), the IPS decay is response-limited (<20 fs), while h-BN/Pt(111) exhibits lifetimes of 56 fs (n = 1) and 75 fs (n = 2). The lifetime contrast is most consistently explained by corrugation-enhanced overlap of the IPS wavefunction with the metal substrate, which accelerates electron decay. These results indicate that atomic-scale corrugation is an effective physical parameter for tuning ultrafast electron dynamics at two-dimensional material and metal interfaces.

cond-mat.mtrl-sci↗

arXiv2024

Lifshitz Transition and Band Structure Evolution in Alkali Metal Intercalated 1Tprime-MoTe2

In van der Waals materials, coupling between adjacent layers is weak, and consequently interlayer interactions are weakly screened. This opens the possibility to profoundly modify the electronic structure, e.g., by applying electric fields or with adsorbates. Here, we show for the case of the topologically trivial semimetal 1Tprime-MoTe2 that potassium dosing at room temperature significantly transforms its band structure. With a combination of angle-resolved photoemission spectroscopy, scanning tunneling microscopy, x-ray photoemission spectroscopy, and density functional theory we show that i) for small concentrations of K, 1Tprime-MoTe2 undergoes a Lifshitz transition with the electronic structure shifting rigidly, and ii) for larger K concentrations 1Tprime-MoTe2 undergoes significant band structure transformation. Our results demonstrate that the origin of this electronic structure change stems from alkali metal intercalation.

cond-mat.mtrl-sci↗

arXiv2022

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.

cond-mat.mtrl-sci↗