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Maxwel Gama Monteiro

Publications and source records attributed to Maxwel Gama Monteiro.

2 recordsLinked to original sources

From sLLG to Fokker-Planck: Accurate WER Modeling for Non-Axisymmetric MRAM Devices

The Fokker--Planck (FP) equation is essential for predicting write error rates (WER) in STT and SOT-MRAM devices, but traditional 1D projections fail when symmetry is broken by in-plane fields, field-like torques, or anisotropic barriers. We develop a 2D finite-volume (FVM) solver on the unit sphere and validate it against $10^6$-trajectory stochastic Landau--Lifshitz--Gilbert (sLLG) simulations. The solver supports four discretization schemes---central, Scharfetter--Gummel (SG), upwind, and hybrid adaptive blending---each with different Péclet-dependent accuracy and monotonicity properties. We demonstrate that central differencing recovers ground-truth WER for STT and SOT geometries where 2D effects dominate, and show that the choice of discretization scheme directly affects predicted WER. For magnetic simulations, we recommend hybrid adaptive blending as the optimal balance of accuracy and stability across variable Péclet regimes. These results establish that customizable discretization is critical for accurate, unbiased predictions of switching dynamics in next-generation magnetic memory.

cs.ET↗

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.

cond-mat.mes-hall↗