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Md Abdul Hamid

Publications and source records attributed to Md Abdul Hamid.

2 recordsLinked to original sources

An Omni-Temporal Theory for Hydrodynamic Dispersion and Reaction in Porous Media

A frequency-based omni-temporal dispersion theory is developed to capture the transient interplay between diffusion, advection, and reaction during solute transport through porous media. Unlike classical asymptotic dispersion theories, which commonly rely on long-time approximation, the proposed framework simultaneously captures both fast and slow components of dispersion. The theory is formulated by volume averaging the Fourier-transformed pore-scale advection-diffusion equation, yielding four frequency-dependent upscaled transport coefficients for a periodic unit cell: a dispersion tensor, an advection-suppression transfer function, a spectral Sherwood number, and a reactivity-bias vector. These coefficients act as transfer functions that relate microscopic driving forces to corresponding effective fluxes in the frequency domain, enabling prediction of transient transport dynamics in the time domain through inverse Fourier transformation. The utility of the proposed framework is demonstrated by deriving analytical expressions for the transfer functions in Poiseuille flow between parallel plates and through circular tubes, and subsequently using them within a Fast Fourier Transform framework to obtain breakthrough curves. For fast solute pulses between inactive parallel plates, the proposed theory produces breakthrough curves in close agreement with direct numerical simulations, whereas conventional asymptotic theory overpredicts propagation rates by orders of magnitude. Finally, the framework is applied to reactive and non-reactive porous media consisting of periodic arrays of square rods under cross flow, demonstrating the generality and versatility of the proposed omni-temporal theory.

physics.flu-dyn

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate

We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited high current densities exceeding 2 kA/cm2 at 10 V, with a turn-on voltage of ~3.0 V (at 1 A/cm^2) and an on/off ratio >10^9 at room temperature. Stable rectifying operation was maintained up to 300 C (the highest measured temperature), with a pronounced increase in current density at elevated temperatures due to thermally activated carrier transport, accompanied by an increase in extracted Schottky barrier height and a reduction in ideality factor. Capacitance voltage measurements showed strong temperature dependence due to the deep donor nature of Si in AlN, resulting in an increase in the net donor concentration (ND-NA) from ~5x10^17 cm-3 at 300 K to ~1x10^18 cm-3 at 373 K. Temperature-dependent reverse-bias characteristics were consistent with Poole-Frenkel emission as the dominant leakage mechanism, with an estimated trap energy of ~0.34 eV. Characterization using transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed a ~5 nm AlNxOy interfacial layer at the metal/semiconductor junction, which likely influences both forward and reverse transport. These results provide insight into carrier transport, leakage mechanisms, interface chemistry, and high-temperature characteristics, and guidance for the future development of high-performance AlN power devices.

physics.app-ph