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Md Ali Ashraf

Publications and source records attributed to Md Ali Ashraf.

2 recordsLinked to original sources
arXiv2021

Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers

We carried out simulative investigations on a non-toxic, lead-free perovskite solar cell (PSC), where Cs2AgBiBr6, P3HT, ZnO nanorod, and C were utilized as the absorber layer, hole transport layer, electron transport layer, and back contact, respectively. At 600 nm optimum absorber thickness, the device achieved a maximum power conversion efficiency of 4.48%. The PSC operated optimally when the electron affinities were set at 3.3 eV and 4.6 eV for P3HT and ZnO nanorod, respectively. Moreover, the hole mobility and acceptor concentration of P3HT should be weighed during the choosing of appropriate doping additives and doping levels. Besides, the optimum back contact work function and absorber defect density were found to be 5.2 eV and 1E15 cm-3, respectively. We also observed the effect of radiative recombination rates and different charge transport layers on the device's performance. Overall, this study's simulation results will provide insightful guidance towards fabricating an environmentally benign PSC.

cond-mat.mtrl-sci↗
arXiv2020

Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance

SCAPS 1-D was used for the simulation of lead-free environmentally benign methylammonium tin-iodide (CH3NH3SnI3) based solar cell. Indium sulphide (In2S3) was utilized as the electron transport layer (ETL) for its high carrier mobility and optimized band structure, unlike traditional titanium oxide (TiO2) ETL. Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprous thiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL) to observe the effect of different HTL on cell performance. We investigated the trend in electrical measurements by altering parameters such as thickness, defect density, valence band (VB) effective density of state and bandgap of the absorber layer, interfacial trap densities and defect density of ETL. At optimum condition, the device revealed the highest efficiency of 18.45% for CuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration. The effect of working temperature, the wavelength of light and band-to-band radiative recombination rate was also observed for both configurations. All these simulation results will help to fabricate eco-friendly high-efficiency perovskite solar cell by replacing the commonly used toxic lead-based perovskite.

cond-mat.mtrl-sci↗