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Md Minhazul Islam

Publications and source records attributed to Md Minhazul Islam.

2 recordsLinked to original sources

A Reliable Context-Aware and Temporal Planning Framework for Autonomous Driving

Safe operation of autonomous vehicles in dense urban traffic depends on perception and planning that remain reliable when onboard sensing is degraded. In real driving conditions, camera observations are frequently corrupted by occlusion, motion blur, illumination change, and sensor noise, and when such degraded observations are aggregated indiscriminately over time, trajectory planning becomes unstable and collision risk rises for both the ego vehicle and surrounding road users. Recent Bird's-Eye-View (BEV) approaches unify perception and planning through a shared spatial representation, but most fuse temporal information across frames without assessing the reliability of the underlying observations. We present a Reliable Context-Aware and Temporal Planning framework for Autonomous Driving (RCT-AD) that explicitly models feature quality and temporal consistency to support safer, more consistent planning. A Reliable Context Awareness module scores per-frame reliability and selectively retains trustworthy features through a quality-gated First-In-Last-Out (FILO) memory mechanism, reconstructing degraded observations from reliable historical context so that corrupted inputs do not destabilize the scene representation. A Temporal Trajectory Planner captures long-term dependencies and multi-agent interactions to produce smoother, safety-aware trajectories, while a joint detection-and-segmentation head injects semantic and motion cues into the shared BEV space to strengthen scene understanding. Experiments on the nuScenes autonomous driving benchmark show that RCT-AD improves perception accuracy, motion prediction, and planning robustness over recent end-to-end baselines, achieving 61.5 nuScenes Detection Score, 52.9 mean Average Precision, and 52.3 mean Intersection over Union, while maintaining competitive computational efficiency suitable for real-time deployment.

cs.RO

Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in beta-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10-4 Ohm.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga2O3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy confirmed this finding and the interpretation of the results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time it demonstrates for the first time p-type and remarkable n-type conductivity in Ga2O3 which should usher in the development of Ga2O3 devices and advance optoelectronics and high-power devices

cond-mat.mtrl-sci