arXiv subjects

Md Zunaid Baten

Publications and source records attributed to Md Zunaid Baten.

3 recordsLinked to original sources

arXiv2025

High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays

Photoelectrochemical photodetectors (PEC-PDs) are promising owing to their simple, low-cost fabrication, self-powered operation, high photoresponse, and environmental sensitivity. In this work, we report for the first time the self-powered PEC photodetection characteristics of nanowire (NW) based green-emitting InGaN/GaN multiple quantum well (MQW) PEC-PDs, fabricated via a scalable top-down approach.The device exhibits strong UV sensitivity with a peak at 365 nm and an extended response into the visible region.Notably, a high photoresponsivity of 330 mA/W was achieved at a lower illumination intensity of 0.7 mW/cm2. Furthermore, the photodetector demonstrates fast, stable, and reproducible performance across varying biases and illumination conditions. These results suggest that InGaN/GaN MQW nanowire-based PEC photodetectors hold strong promise for scalable, efficient, and stable self-powered optoelectronic applications

physics.app-ph↗

arXiv2025

InGaN Nanopixel Arrays on Single Crystal GaN Substrate

Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale dimensions presents significant challenges, including enhanced nonradiative surface recombination, defect and/or dislocation-related emission degradation and nanoscale pixel contact formation. In this work, we demonstrate strain-engineered nanoscale blue LED pixels fabricated via top-down nanostructuring of an all-InGaN quantum well/barrier heterostructure grown by plasma-assisted molecular beam epitaxy (PAMBE) on significantly low dislocation-density single-crystal GaN substrates. Sidewall passivation using atomic layer deposition (ALD) of Al2O3 enables excellent diode behavior, including a high rectification ratio and extremely low reverse leakage. Monte Carlo analyses suggest almost 100% yield of completely dislocation-free active regions for 450 nm nanopixels. Electroluminescence measurements show bright blue emission with a peak external quantum efficiency (EQE) of 0.46%. Poisson Schrodinger simulations reveal partial strain relaxation in the QW, effectively mitigating the quantum confined Stark effect (QCSE). Additionally, finite-difference time-domain (FDTD) simulations confirm that the nanoscale geometry enhances light extraction efficiency by over 40% compared to planar designs, independent of substrate materials. These results establish a scalable pathway for dislocation free, high-brightness InGaN microLED arrays suitable for advanced display and photonic systems.

physics.app-ph↗

arXiv2018

Non-Linear Photocurrent Response to Bosonic Final State Stimulation in Microcavity Diodes

We report the optical excitation-dependent output photocurrent characteristics of GaN-based polariton diode lasers operated under reverse-bias at room temperature. The photocurrent demonstrates a non-linear enhancement at an incident optical power of ~ 1.6 mW, which is approximately equivalent to the value of polariton lasing threshold observed when the diodes are operated under forward bias conditions. This is explained in the framework of an Auger-like process of excitonic dissociation into its constituent electron-hole pairs, which can be stimulated by the occupation of the polariton lasing states. The observed effect is a remarkable manifestation of the bosonic final state stimulation in polariton lasers. A model based on the coupled kinetic equations for the free carriers, the excitonic reservoir and the polariton condensate shows a good agreement to the experimental data.

physics.app-ph↗